scholarly journals Phosphorus Behavior in Heavily Phosphorus-Doped Silicon Surfaces due to Annealing. X-Ray Photoelectron Spectroscopy and Secondary Ion Mass Spectroscopy.

Shinku ◽  
1995 ◽  
Vol 38 (3) ◽  
pp. 295-298 ◽  
Author(s):  
Wen Biao YING ◽  
Yusuke MIZOKAWA ◽  
Yoshitomo KAMIURA ◽  
Yong Bing YU ◽  
Masafumi NISHIMATSU ◽  
...  
Keyword(s):  
Mass Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Silicon Surfaces ◽  
Secondary Ion Mass Spectroscopy ◽  
X Ray ◽  
Doped Silicon ◽  
Phosphorus Doped ◽  
Secondary Ion

Evaluation of the initial oxidation of heavily phosphorus doped silicon surfaces using angle-dependent X-ray photoelectron spectroscopy

1999 ◽  
Vol 343-344 ◽  
pp. 393-396 ◽  
Author(s):  
W.B. Ying ◽  
Y. Mizokawa ◽  
K. Tanahashi ◽  
Y. Kamiura ◽  
M. Iida ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Silicon Surfaces ◽  
Initial Oxidation ◽  
X Ray ◽  
Doped Silicon ◽  
Phosphorus Doped
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