TUNABLE BANDPASS FILTER USING  RF MEMS SWITCHES

A band pass tunable RF filter is proposed by using Radio Frequency (RF) Microelectro Mechanical Systems (MEMS). The tunability is obtained by using capacitive MEMS switches that can be tuned within the bandwidth of 3.6 GHz to 4.4 GHz. The performance of the filter depends on geometry and location and types of the MEMS switches. Optimization has been done to achieve tunability by using 3-D high frequency electromagnetic simulator (HFSS).

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A novel low-loss 4-bit bandpass filter using RF MEMS switches

Chinese Physics B ◽

10.1088/1674-1056/ac1b95 ◽

2021 ◽

Author(s):

Lulu Han ◽

Yu Wang ◽

Qiannan Wu ◽

Shiyi Zhang ◽

Shanshan Wang ◽

...

Keyword(s):

Bandpass Filter ◽

Rf Mems ◽

Low Loss ◽

Mems Switches ◽

Rf Mems Switches

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High frequency parasitic effects for on-wafer packaging of RF MEMS switches

IEEE MTT-S International Microwave Symposium Digest, 2003 ◽

10.1109/mwsym.2003.1210536 ◽

2003 ◽

Cited By ~ 8

Author(s):

A. Margomenos ◽

L.P.B. Katehi

Keyword(s):

High Frequency ◽

Rf Mems ◽

Mems Switches ◽

Rf Mems Switches ◽

Parasitic Effects

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Modeling and Validation of Capacitive Type RF MEMS Switches for Low Actuation Voltage and High Isolation

Volume 1: Advances in Control Design Methods; Advances in Nonlinear Control; Advances in Robotics; Assistive and Rehabilitation Robotics; Automotive Dynamics and Emerging Powertrain Technologies; Automotive Systems; Bio Engineering Applications; Bio-Mechatronics and Physical Human Robot Interaction; Biomedical and Neural Systems; Biomedical and Neural Systems Modeling, Diagnostics, and Healthcare ◽

10.1115/dscc2018-8939 ◽

2018 ◽

Cited By ~ 1

Author(s):

Suhas S. Mohite ◽

Mukesh Madhewar ◽

Vishram B. Sawant

Keyword(s):

High Frequency ◽

Rf Mems ◽

Actuation Voltage ◽

Mems Switches ◽

High Isolation ◽

Rf Mems Switches ◽

Optimum Geometry ◽

Mechanical Resonant Frequency ◽

Structural Configurations ◽

Insertion Losses

Design objectives in capacitive type radio frequency micro electro mechanical switches (RF-MEMS) are to reduce actuation voltages and to obtain low insertion losses with high isolation. In this study, we report design, modeling and simulation of three new structural configurations using ANSYS to obtain the optimum geometry; further high frequency simulations are performed using HFSS to obtain low insertion losses and high isolation. The designed switches require only 3.9 to 5 V as pull-in voltage for actuation. The mechanical resonant frequency and quality factor are in the range of 6.5 to 8.7 kHz and 1.1 to 1.2, respectively. Switching times for all the designs are 32 to 38 μs at their respective pull-in voltages. Two of the switch designs have insertion loss of less than 0.25 to 0.8 dB at 60 and 50 GHz, and isolation greater than 58 dB for all three designs.

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The Effect of Dielectric Charging on Capacitive MEMS Switch

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.511-512.732 ◽

2014 ◽

Vol 511-512 ◽

pp. 732-736

Author(s):

Qin Wen Huang ◽

Xiang Guang Li ◽

Yun Hui Wang ◽

Yu Bin Jia

Keyword(s):

Rf Mems ◽

Actuation Voltage ◽

Deposition Process ◽

Dielectric Surface ◽

One Dimensional ◽

Mems Switches ◽

Dielectric Charging ◽

Mems Switch ◽

Rf Mems Switches ◽

Capacitive Mems

Based on a one-dimensional model of dielectric charging for capacitive RF MEMS switches, the accumulated charge density and actuation voltage shift were simulated. The results illustrate that rougher surface can reduce dielectric charging, so the dielectric layer should be fabricated much rougher during deposition process. But the capacitance ratio of switch will be decreased with rougher surface, which can cause a reduction of switch performance. Thus the dielectric surface roughness should be balanced in reliability and isolation.

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