scholarly journals INFLUENCE OF LIGHT ABSORPTION PROFILE ON THE PERFORMANCE OF ORGANIC PHOTOVOLTAICS

2021 ◽  
Vol 22 (2) ◽  
pp. 135-148
Author(s):  
Abdul Halim Ikram Mohamed ◽  
Mohd Lukman Inche Ibrahim
Keyword(s):  
Active Layer ◽  
Light Absorption ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Absorption Profile ◽  
Current Voltage ◽  
Specific Position ◽  
Very High

We investigate how an enhanced light absorption at a specific position inside the active layer affects the performance of organic photovoltaic cells (OPVs), namely the short-circuit current density ( ), the open-circuit voltage ( ), the fill factor (FF), and the power conversion efficiency (PCE). The performance is calculated using an updated version of a previously published analytical current-voltage model for OPVs, where the updated model allows the light absorption profile to be described by any functions provided that analytical solutions can be produced. We find that the light absorption profile affects the performance through the drift current. When the mobility imbalance is not very high (when the ratio of the mobility of the faster carrier type to the mobility of the slower carrier type is less than about ), the PCE is maximized when the light absorption is concentrated at the center of the active layer. When the mobility imbalance is very high (when the ratio of the mobility of the faster carrier type to the mobility of the slower carrier type is more than approximately ), the PCE is maximized when the light absorption is concentrated near the electrode collecting the slower carrier type. Therefore, it is important to ensure that the light absorption profile is properly tuned so that the performance of OPVs is maximized. Moreover, any efforts that we make to improve the performance should not lead to a light absorption profile that would actually impair the overall performance. ABSTRAK: Kajian ini menilai bagaimana penyerapan cahaya yang tinggi pada bahagian tertentu lapisan aktif mempengaruhi prestasi sel fotovoltaik organik (OPV), iaitu ketumpatan arus litar pintas (Jsc), voltan litar terbuka (Voc), faktor pengisian (FF), dan kecekapan penukaran kuasa (PCE). Prestasi dikira mengguna pakai model terkini yang diperbaharui dari model asal analitikal OPV voltan-arus, di mana model ini membenarkan mana-mana profil penyerapan cahaya digunakan asalkan penyelesaian analitikal terhasil.  Dapatan kajian mendapati profil penyerapan cahaya mempengaruhi prestasi berdasarkan arus hanyut. Apabila ketidakseimbangan pergerakan caj tidak begitu tinggi (di mana nisbah pergerakan pembawa caj laju kepada perlahan adalah kurang daripada 103), PCE menjadi maksimum jika penyerapan cahaya bertumpu pada tengah lapisan aktif. Apabila ketidakseimbangan pergerakan caj sangat tinggi (di mana nisbah pergerakan pembawa caj laju kepada perlahan adalah lebih daripada 104), PCE menjadi maksimum jika penyerapan cahaya bertumpu pada elektrod yang mengutip pembawa caj perlahan. Oleh itu, kedudukan talaan profil penyerapan cahaya yang tepat adalah sangat penting bagi menentukan prestasi OPV dimaksimumkan. Tambahan, apa sahaja usaha penambahbaikan prestasi seharusnya tidak menyebabkan pengurangan keseluruhan prestasi profil penyerapan cahaya.

scholarly journals Simulation of a perovskite sandwich solar cell with the p-CZTS / p-CH3NH3PbCI3 / p-CZTS absorber layers

2021 ◽  
Vol 877 (1) ◽  
pp. 012001
Author(s):  
Marwah S Mahmood ◽  
N K Hassan
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Current Density ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Current Voltage ◽  
Cell Capacitance

Abstract Perovskite solar cells attract the attention because of their unique properties in photovoltaic cells. Numerical simulation to the structure of Perovskite on p-CZTS/p-CH3NH3PbCI3/p-CZTS absorber layers is performed by using a program solar cell capacitance simulator (SCAPS-1D), with changing absorber layer thickness. The effect of thickness p-CZTS/p-CH3NH3PbCI3/p-CZTS, layers at (3.2μm, 1.8 μm, 1.1 μm) respectively are studied. The obtained results are short circuit current density (Jsc ), open circuit voltage (V oc), fill factor (F. F) and power conversion efficiency (PCE) equal to (28 mA/cm2, 0.83 v, 60.58 % and 14.25 %) respectively at 1.1 μm thickness. Our findings revealed that the dependence of current - voltage characteristics on the thickness of the absorbing layers, an increase in the amount of short circuit current density with an increase in the thickness of the absorption layers and thus led to an increase in the conversion efficiency and improvement of the cell by increasing the thickness of the absorption layers.

Metal/Porous Silicon Schottky Diode Structures as Sensors

2006 ◽  
Vol 915 ◽  
Author(s):  
Tayyar Dzhafarov ◽  
Cigdem Oruc Lus ◽  
Sureyya AYDIN ◽  
Emel Cingi
Keyword(s):  
Porous Silicon ◽  
Schottky Diode ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Current Voltage ◽  
Schottky Type ◽  
Capacitance Characteristics

AbstractIn this work we present data on investigation of the current-voltage and capacitance characteristics of Au/PS Schottky type structures in the presence of different hydrogen-containing solutions (glucose, ethanol, methanol, boric acid, sodium tetraborate pentahydrate, sodium borohydride, benzine, KOH). Generation of the open-circuit voltage and short-circuit current density and capacitance up to 0.55 V, 25 mA/cm2 and 1μF respectively on placing of Au/PS structures in these solutions was discovered. This effect is mainly caused by hydrogen component of solutions. The possible mechanism generation of voltage and capacitance in metal/PS sensors hydrogen-containing solutions is suggested. The advantage of metal/PS Schottky type sensors consists in working without applying external electricity.

scholarly journals Fabrication of Hybrid Polymer Solar Cells By Inverted Structure Based on P3HT:PCBM Active Layer

2017 ◽  
Vol 17 (1) ◽  
pp. 13
Author(s):  
Shobih Shobih ◽  
Rizky Abdillah ◽  
Erlyta Septa Rosa
Keyword(s):  
Solar Cells ◽  
Active Layer ◽  
Bulk Heterojunction ◽  
Polymer Solar Cells ◽  
Short Circuit ◽  
Sol Gel ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Hybrid Polymer

Hybrid polymer solar cell has privilege than its conventional structure, where it usually has structure of (ITO/PEDOT:PSS/Active Layer/Al). In humid environment the PEDOT:PSS will absorb water and hence can easily etch the ITO. Therefore it is necessary to use an alternative method to avoid this drawback and obtain more stable polymer solar cells, namely by using hybrid polymer solar cells structure with an inverted device architecture from the conventional, by reversing the nature of charge collection. In this paper we report the results of the fabrication of inverted bulk heterojunction polymer solar cells based on P3HT:PCBM as active layer, utilizing ZnO interlayer as buffer layer between the ITO and active layer with a stacked structure of ITO/ZnO/P3HT:PCBM/PEDOT:PSS/Ag. The ZnO interlayer is formed through short route, i.e. by dissolving ZnO nanoparticles powder in chloroform-methanol solvent blend rather than by sol-gel process. Based on the measurement results on electrical characteristics of inverted polymer solar cells under 500 W/m2 illumination and AM 1.5 direct filter at room temperature, cell with annealing process of active layer at 110 °C for 10 minutes results in higher cell performance than without annealing, with an open-circuit voltage of 0.21 volt, a short-circuit current density of 1.33 mA/cm2 , a fill factor of 43.1%, and a power conversion efficiency of 0.22%. The low cell’s performance is caused by very rough surface of ZnO interlayer.

scholarly journals Study The Current Density-Voltage (J-V) Characteristics of α-Fe2O3 Thin Film Prepared by Spray Pyrolysis Technique

2020 ◽  
Vol 25 (1) ◽  
pp. 1-7
Author(s):  
Mohammed Sami Abd ali ◽  
Ahmed Shaker Hussein ◽  
Hayder Mohammed hadi
Keyword(s):  
Current Density ◽  
Fill Factor ◽  
Spray Pyrolysis Technique ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Saturation Current ◽  
Conversion Yield ◽  
Current Voltage

ABSTRACT:   In this work was measured characteristics (current - voltage) for the  (fe2o3 )thin films . The characteristics of the current density-voltage(J-V) were calculated at in both dark and light (100 mw/cm2) conditions. The parameters for this research of the photovoltaic samples, that is, were obtained directly from the curves of the resulting characteristics on the basic variables for the solar cell: the short circuit current density  (Jsc‏  ( ‏ , saturation current (Jo ), open-circuit voltage  (Voc) , fill factor ( FF), and efficiency of solar energy conversion (yield) ƞ ,

Fabrication of a Dye Sensitized Solar Cell and Its Performance Dependence on Temperature and Irradiance

2011 ◽  
Author(s):  
Edwin Peng ◽  
Halil Berberoglu
Keyword(s):  
Short Circuit ◽  
Dye Sensitized Solar Cells ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Dye Sensitized ◽  
Current Voltage ◽  
Nanocrystalline Titanium ◽  
Increasing Temperature ◽  
Sensitized Solar Cells

This paper reports the temperature and irradiance dependence of dye-sensitized solar cells (DSSCs) with acetonitrile-based electrolytes. The prototyped DSSCs had nanocrystalline titanium dioxide photoanodes and platinum thin film cathode. The photoanodes were sensitized with N-749 dye. The current-voltage characteristics of the DSSCs were measured at temperatures from 5 to 50 °C and under 500, 1000, and 1500 W m−2 irradiance. The open circuit voltage, VOC, decreased linearly with increasing temperature and had positive, logarithmic relation with irradiance. At temperatures lower than 15 °C, short circuit current density, JSC, was limited by the diffusion of I3− in the electrolyte and increased with increasing temperature. At higher temperatures the recombination of electrons injected into the TiO2 conduction band was dominant over diffusion and JSC decreased with increasing temperature. Moreover, JSC increaed linearly with increasing irradiance. The DSSC photoconversion efficiency did not vary appreciably at temperatures lower than 15 °C but decreased with increasing temperature. Finally, the efficiency increased with increasing irradiance.

scholarly journals Stability of High Band Gap P3HT : PCBM Organic Solar Cells Using TiOxInterfacial Layer

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Kurniawan Foe ◽  
Gon Namkoong ◽  
Matthew Samson ◽  
Enas M. Younes ◽  
Ilho Nam ◽  
...  
Keyword(s):  
Active Layer ◽  
Organic Solar Cells ◽  
Interfacial Layer ◽  
Short Circuit ◽  
Sol Gel ◽  
Acid Methyl Ester ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Photon Absorption

We fabricated a poly[3-hexylthiophene] (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) organic photovoltaic cells (OPCs) using TiOxinterfacial layer. We performed optimization processes for P3HT : PC61BM with the TiOxlayer. We found that a solution based TiOxlayer coated at a spin speed of 3000 rpm improved the photon absorption of the active layer. An optimized TiOxlayer was also used as the interfacial layer to investigate the stability of P3HT : PC61BM OPC. After 70 days of storage, we observed that the short-circuit current density (JSC) dropped by 16.2%, fill factor (FF) dropped by 10.6%, and power conversion efficiency (PCE) dropped approximately by 25%, while the open-circuit voltage (VOC) remained relatively stable. We found that a solution based TiOxlayer synthesized using a sol-gel chemistry method was very effective in protecting the active layer from degradation.

In Situ Cadmium Suflide Synthesis in Polymer Thin Film for Solar Cells Application

2015 ◽  
Vol 1107 ◽  
pp. 625-630
Author(s):  
Fatin Hana Naning ◽  
S. Malik ◽  
Zanuldin Ahmad
Keyword(s):  
Thin Film ◽  
Hydrogen Sulfide ◽  
Solar Cells ◽  
Active Layer ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Polymer Thin Film ◽  
Regioregular Poly

Cadmium sulfide (CdS) were synthesised directly in the active layer of solar cell by mixing regioregular poly (3-hexylthiophene-2,5-diyl) or P3HT with stearic acid, and exposed to hydrogen sulfide gas. The exposure times to hydrogen sulfide gas were varied and the isotherm of P3HT:Stearic acid obtained show that the presence of cadmium ions in the subphase changes the gas-liquid-solid transformation profile. UV-Vis-NIR results indicated that exposure to hydrogen sulfide gas created CdS particles resulting in wider absorption spectra. The exposed P3HT:SA active layer exhibit high resistance that affects short circuit current density and open circuit voltage of the solar cells device. Keywords: CdS, P3HT, Thin Film, Angle Lifting Deposition, Solar Cells

scholarly journals Hybrid TiO2 Solar Cells Produced from Aerosolized Nanoparticles of Water-Soluble Polythiophene Electron Donor Layer

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Marshall L. Sweet ◽  
Joshua G. Clarke ◽  
Dmitry Pestov ◽  
Gary C. Tepper ◽  
James T. McLeskey
Keyword(s):  
Solar Cells ◽  
Film Formation ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Water Soluble ◽  
Saturation Current ◽  
Device Structure ◽  
Current Voltage

Hybrid solar cells (HSCs) with water soluble polythiophene sodium poly[2-(3-thienyl)-ethyloxy-4-butylsulfonate] (PTEBS) thin films produced using electrospray deposition (ESD) were fabricated, tested, and modeled and compared to devices produced using conventional spin coating. A single device structure of FTO/TiO2/PTEBS/Au was used to study the effects of ESD of the PTEBS layer on device performance. ESD was found to increase the short circuit current density (Jsc) by a factor of 2 while decreasing the open circuit voltage (Voc) by half compared to spin coated PTEBS films. Comparable efficiencies of 0.009% were achieved from both device construction types. Current-voltage curves were modeled using the characteristic solar cell equation and showed a similar increase in generated photocurrent with an increase by two orders of magnitude in the saturation current in devices from ESD films. Increases in Jsc are attributed to an increase in the interfacial contact area between the TiO2 and PTEBS layers, while decreases in Voc are attributed to incomplete film formation from ESD.

Fabrication, Illumination Dependent Electrical and Photovoltaic Properties of Au/BOD-Pyr/n-Si/In Schottky Diode

2021 ◽  
Author(s):  
Onur Ongun ◽  
Enis Taşcı ◽  
Mustafa Emrullahoğlu ◽  
Ümmühan Akın ◽  
Nihat Tuğluoğlu ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Illumination Level ◽  
Photovoltaic Properties ◽  
Current Voltage ◽  
Homo And Lumo

Abstract 4,4-Difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY)-based BOD-Pyr compound was synthesized according to the literature and  HOMO and LUMO energies of the BOD-Pyr were calculated by DFT/B3LYP/6-311G(d,p) method using on Gaussian 09W. Au/BOD-Pyr/n-Si/In Schottky diode were fabricated using thermal evaporation and spin coating technique. The electronic and photovoltaic properties of Au/BOD-Pyr/n-Si/In photodiode have been investigated by current-voltage (I-V) measurements at dark and under various illumination intensities. The calculated ideality factor and barrier height of the diode in dark were found to be 2.84 and 0.75 eV, respectively. These parameters were also obtained under 100 mW/cm2 illumination level as 1.55 and 0.87 eV, respectively. The values of open-circuit voltage and short circuit current density were obtained as 0.26 V and 0.56 mA/cm2 under the illumination level of 100 mW/cm2. These all findings suggest that Au/BOD-Pyr/n-Si/In device can be used as photodiode in optoelectronic applications.

scholarly journals Impact of RbF-PDT on Cu(In,Ga)Se2 solar cells with CdS and Zn(O,S) buffer layers

2020 ◽  
Vol 11 ◽  
pp. 8
Author(s):  
Ana Kanevce ◽  
Stefan Paetel ◽  
Dimitrios Hariskos ◽  
Theresa Magorian Friedlmeier
Keyword(s):  
Positive Impact ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Buffer Layers ◽  
Performance Loss ◽  
Current Voltage ◽  
The Impact ◽  
Diode Current

Alkali-fluoride post-deposition treatments (PDTs) of Cu(In,Ga)Se2 (CIGS) absorbers have repeatedly resulted in device efficiency improvements, observed mainly due to an open-circuit voltage (Voc) enhancement. Replacement of the CdS buffer layer with a higher band gap alternative can increase the short-circuit current density (Jsc) and also eliminate the use of Cd. In many alternative-buffer attempts, however, the Jsc gain was accompanied by a Voc loss, resulting in some degree of performance loss. In order to better understand the impact of RbF-PDT, we analyze a combination of experimental devices produced in the same in-line CIGS run with and without RbF-PDT in combination with chemical-bath-deposited CdS and Zn(O,S) buffers. Low-temperature current–voltage curves indicate a difference in Rb impact on the CIGS/CdS and CIGS/Zn(O,S) p-n junctions. For example, the diode-current barrier which creates a rollover often observed in RbF-treated CIGS/CdS current–voltage curves is significantly reduced for the CIGS/Zn(O,S) junction. Although the RbF-PDT had a positive impact on both junction partner combinations, the CIGS/Zn(O,S) devices' Voc and fill factor (FF) benefited stronger from the RbF treatment. As a result, in our samples, the Jsc and FF gain balanced the Voc loss, thus reducing the efficiency difference between cells with CdS and Zn(O,S) buffers.

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