Desain Charger Control Pembangkit Listrik Tenaga Hybrid  Dengan Pengaturan Duty Cycle PWM

The use of DC source voltage obtained from solar cells and DC generators varies in value depending on the surrounding natural conditions, for that a controller is needed which functions to regulate the voltage in carrying out the charging process to the accumulator. This paper will discuss about the design of charge controller based on Arduino Uno R3 with ATmega328 microcontroller. This controller is used to regulate the charging process from a DC source with a maximum open circuit voltage of 24 Volts, which is then used to charge the 12 Volt accumulator. This charge controller works by sending a source voltage that is regulated by pulse width modulation. When the accumulator voltage is 13.8 Volt, the controller will carry out a charging process with a duty cycle of 95%, if the accumulator voltage is> 13.8 Volts and ˂14.4 Volts, charging will be carried out with a duty cycle of 10%, and if the accumulator voltage exceeds 14.4 Volt, the charging process will be stopped. Some protection equipment is also included in this charge controller such as overvoltage protection, overcurrent and also control of the connection breaker to the load when the accumulator voltage is weak, and a disconnect from source to accumulator when the accumulator condition is full. To show the work of the whole system, with the Arduino Uno R3 microcontroller the parameters of source voltage, accumulator voltage and percentage of accumulator status are displayed on the LCD screen then 2 LED lights and a buzzer as indicators during the charging process and when the accumulator condition is weak. From the results of the voltage reading on the voltage divider sensor, it has an error of less than 6.22% at the source terminal and 6.89% at the accumulator terminal..

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Rancang Bangun Pulse Width Modulation (PWM) Sebagai Pengatur Kecepatan Motor DC Berbasis Mikrokontroler Arduino

Jurnal Penelitian ◽

10.46491/jp.v3e1.31.50-58 ◽

2018 ◽

Vol 3 (1) ◽

pp. 50-58

Author(s):

Rifdian I. S. ◽

Hartono Hartono

Keyword(s):

Duty Cycle ◽

Pulse Width ◽

Pulse Width Modulation ◽

Arduino Uno

Pulse Width Modulation (PWM) sebagai pengatur kecepatan motor DC telah digunakan secara luas di dunia industri. Kecepatan putar motor dikontrol dengan mengatur duty cycle PWM yang dibangkitkan oleh mikrokontroler arduino. Pada penelitian ini pengaturan nilai PWM dilakukan melalui program (sketch) ke arduino uno. Output dari PWM dihubungkan pada arduino melalui pin output analog. Dengan pengamatan menggunakan osiloskop dapat diketahui bahwa perubahan nilai ton dan toff menentukan nilai RPM dari motor DC yang dikontrol. Sehingga dengan menggunakan nilai PWM yang berbeda, variasi kecepatan motor DC juga berubah-ubah. Nilai PWM yang digunakan yaitu kelipatan 10 dari 25 hingga 255. Diperoleh hasil pengamatan berupa Ton dan Toff yang tertera pada osiloskop dan hasil pengamatan tersebut diolah untuk mengetahui duty cycle yang kemudian dibandingankan dengan PWM dan RPM nya. Sehingga dapat diketahui bahwa semakin besar nilai PWM maka RPM motor DC juga akan semakin besar, dan semakin besar nlai PWM yang diberikan, maka nilai duty cycle yang dihasilkan juga akan semakin besar

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Microcrystalline (Si,Ge):H Solar Cells

MRS Proceedings ◽

10.1557/proc-762-a7.6 ◽

2003 ◽

Vol 762 ◽

Cited By ~ 1

Author(s):

Jianhua Zhu ◽

Vikram L. Dalal

Keyword(s):

Solar Cells ◽

Buffer Layer ◽

Quantum Efficiency ◽

Fill Factor ◽

Open Circuit Voltage ◽

Defect Density ◽

Cell Structure ◽

Open Circuit ◽

Base Layer ◽

Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

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