scholarly journals Influence of Annealing Temperatures on Nonlinear Optical, Dielectric, Semiconducting Results, and Fermi Level Position for CdP0.03Te0.97 Thin Film

2021 ◽  
Vol 12 (2) ◽  
pp. 1916-1926

CdP0.03Te0.97 thin films were deposited at room temperature using thermal evaporation and annealed at 100 and 200°C. The effect of annealing temperature Tann on both dispersion energy Ed and oscillating energy Eo were studied. The lattice dielectric constant εL and free carrier concentration/effective mass N/m* were calculated for these samples. The values of the first order of moment M-1, the third order of moment M-3, and static refractive index no were determined. Both of dielectric loss ε\ and dielectric tangent loss ε\\ for these films increased with photon energy (hν) and had the highest value higher than the energy gap Eg. All of the optical parameters such as real part of optical conductivity σ1, the imaginary part of optical conductivity σ2 and the relation between Volume Energy Loss/ Surface Energy Loss (VEL/SEL) were determined. The linear optical susceptibility χ(1) increased with Tann. The influence of annealing temperatures on all of the non-linear refractive index n2, the third-order non-linear optical susceptibility χ(3), and non-linear absorption coefficient βc were studied. Both of the electrical susceptibility χe and relative permittivity εr increased with Tann and had the highest value higher than Eg. The dependence of density valence band, conduction band, and position of Fermi level Ef were studied.

2019 ◽  
Vol 9 (2) ◽  
pp. 325 ◽  
Author(s):  
Yonggang Qin ◽  
Xiaobo Feng ◽  
Yu Liu

Alongside its other favorable properties, the large refraction nonlinearity of graphene-related material makes it ideal for use in optoelectronics applications. Numerous experimental studies about nonlinear optical refraction have been conducted, but theoretical verification is lacking. In this paper the nonlinear refractive index for rectangular graphene quantum dots (RGQDs) was calculated using the relationship between nonlinear refractive index and the third-order nonlinear optical susceptibility. The third-order nonlinear optical susceptibility for third harmonic generation was derived employing the electronic states obtained from the Dirac equation around K point in RGQDs under hard wall boundary conditions. Results revealed that the calculated nonlinear refractive index, n 2 , was in the magnitude of 10−14 m2/W in the visible region, which is nearly five orders larger than conventional semiconductor quantum dots, while in the infrared region the nonlinear refractive index reached up to the magnitude of 10−11 m2/W for M = 3M0 sized RGQDs where the resonance enhancement occurred. The nonlinear refractive index could be tuned both by the edges and sizes.


2001 ◽  
Vol 119 (1-3) ◽  
pp. 545-546 ◽  
Author(s):  
M. Hotzel ◽  
S. Rentsch ◽  
D.A.M. Egbe ◽  
T. Pautzsch ◽  
E. Klemm

Author(s):  
Mounira Mekhnache ◽  
Hayet Benzarouk ◽  
Abdelaziz Drici

Abstract In this work, optical properties of undoped zinc oxide (ZnO) and chromium (Cr) doped ZnO prepared at different concentrations of Cr (2, 3, and 5 wt.%) on glass substrates by a spray pyrolysis method are reported. The structural properties investigated by X-ray diffraction revealed the hexagonal wurtzite structure, noting that the crystallite size of the films decreases with increasing Cr content. The optical characterization of the samples was carried out using spectral transmittance. The refractive index, energy gap, and extinction coefficient of pure and Cr-doped ZnO thin films have been calculated. The single oscillator model of Wemple–DiDomenico was used to study the dispersion of the refractive index. The oscillator parameters, the single oscillator energy, the dispersion energy, and the static refractive index were determined. The linear optical susceptibility and non-linear optical susceptibility were also studied and discussed. These promising results achieved by Cr-doping of ZnO exhibited an important behavior for technological applications in electronic, optoelectronic devices and non-linear optical applications.


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