scholarly journals Tunnel Magnetoresistance of Junctions with Twisted Magnetization

2005 ◽  
Vol 5 (1) ◽  
pp. 13-17 ◽  
Author(s):  
G. Kimura ◽  
T. Ohsawa ◽  
H. Itoh ◽  
J. Inoue
Keyword(s):  
Tunnel Magnetoresistance

Tunnel Magnetoresistance Effect for Double Tunnel Junctions with Al Intermediate Layer.

2001 ◽  
Vol 25 (4−2) ◽  
pp. 767-770 ◽  
Author(s):  
T. Daibou ◽  
M. Oogane ◽  
Y. Ando ◽  
C. Kim ◽  
O. Song ◽  
...  
Keyword(s):  
Intermediate Layer ◽  
Tunnel Junctions ◽  
Magnetoresistance Effect ◽  
Tunnel Magnetoresistance

scholarly journals Large Inverse Tunnel Magnetoresistance in Magnetic Tunnel Junctions with an Fe3O4 Electrode

2021 ◽  
Vol 15 (3) ◽  
Author(s):  
Shoma Yasui ◽  
Syuta Honda ◽  
Jun Okabayashi ◽  
Takashi Yanase ◽  
Toshihiro Shimada ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Magnetoresistance

scholarly journals Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions

2021 ◽  
Vol 118 (4) ◽  
pp. 042411
Author(s):  
Thomas Scheike ◽  
Qingyi Xiang ◽  
Zhenchao Wen ◽  
Hiroaki Sukegawa ◽  
Tadakatsu Ohkubo ◽  
...  
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Spin Valve ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Magnetoresistance

Materials, Devices and Spin Transfer Torque in Antiferromagnetic Spintronics: A Concise Review

SPIN ◽  
2017 ◽  
Vol 07 (03) ◽  
pp. 1740014 ◽  
Author(s):  
Cormac Ó Coileáin ◽  
Han Chun Wu
Keyword(s):  
Magnetic Fields ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Tetragonal Structure ◽  
Next Generation ◽  
Tunnel Magnetoresistance ◽  
Spintronic Devices ◽  
Concise Review ◽  
Plane Anisotropy ◽  
Magnetic States

From historical obscurity, antiferromagnets are recently enjoying revived interest, as antiferromagnetic (AFM) materials may allow the continued reduction in size of spintronic devices. They have the benefit of being insensitive to parasitic external magnetic fields, while displaying high read/write speeds, and thus poised to become an integral part of the next generation of logical devices and memory. They are currently employed to preserve the magnetoresistive qualities of some ferromagnetic based giant or tunnel magnetoresistance systems. However, the question remains how the magnetic states of an antiferromagnet can be efficiently manipulated and detected. Here, we reflect on AFM materials for their use in spintronics, in particular, newly recognized antiferromagnet Mn2Au with its in-plane anisotropy and tetragonal structure and high Néel temperature. These attributes make it one of the most promising candidates for AFM spintronics thus far with the possibility of architectures freed from the need for ferromagnetic (FM) elements. Here, we discuss its potential for use in ferromagnet-free spintronic devices.

Tunnel magnetoresistance of a CnBN (n = 58 and 68) molecular junction

2012 ◽  
Vol 110 (1) ◽  
pp. 49-63 ◽  
Author(s):  
Mojtaba Yaghobi ◽  
Mohamad Yuonesi
Keyword(s):  
Molecular Junction ◽  
Tunnel Magnetoresistance

scholarly journals Tunnel magnetoresistance with atomically thin two-dimensional hexagonal boron nitride barriers

Nano Research ◽  
2014 ◽  
Vol 8 (4) ◽  
pp. 1357-1364 ◽  
Author(s):  
André Dankert ◽  
M. Venkata Kamalakar ◽  
Abdul Wajid ◽  
R. S. Patel ◽  
Saroj P. Dash
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Two Dimensional ◽  
Tunnel Magnetoresistance

Anomalous voltage dependence of tunnel magnetoresistance in (Zn, Co)O-based junction with double barrier

2007 ◽  
Vol 91 (17) ◽  
pp. 172109 ◽  
Author(s):  
C. Song ◽  
Y. C. Yang ◽  
X. W. Li ◽  
X. J. Liu ◽  
F. Zeng ◽  
...  
Keyword(s):  
Voltage Dependence ◽  
Double Barrier ◽  
Tunnel Magnetoresistance

Substantial and stable magnetoresistance and spin conductance in phosphorene-based spintronic devices with Co electrodes

2021 ◽  
Author(s):  
Zhao Chen ◽  
Guojun Li ◽  
Haidi Wang ◽  
Qiong Tang ◽  
ZhongJun Li
Keyword(s):  
Spin Transport ◽  
Spin Injection ◽  
Injection Efficiency ◽  
Tunnel Magnetoresistance ◽  
Spintronic Devices ◽  
Magnetoresistance Ratio ◽  
Large Tunnel ◽  
Spin Conductance

Phosphorene-based device with fcc Co(111) electrodes shows excellent spin transport characteristics: large tunnel magnetoresistance ratio and stable spin injection efficiency.

Highly strain-sensitive magnetostrictive tunnel magnetoresistance junctions

2015 ◽  
Vol 384 ◽  
pp. 308-313 ◽  
Author(s):  
Ali Tavassolizadeh ◽  
Patrick Hayes ◽  
Karsten Rott ◽  
Günter Reiss ◽  
Eckhard Quandt ◽  
...  
Keyword(s):  
Tunnel Magnetoresistance
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