scholarly journals Optimized Voltage-Induced Control of Magnetic Domain-Wall Propagation in Hybrid Piezoelectric/Magnetostrictive Devices

Actuators ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 134
Author(s):  
Giancarlo Consolo ◽  
Giovanna Valenti
Keyword(s):  
Domain Wall ◽  
Electric Field ◽  
Domain Walls ◽  
Magnetic Domain ◽  
Major Axis ◽  
Magnetic Domain Walls ◽  
Tightly Coupled ◽  
Dynamical Regimes ◽  
Crystal Class ◽  
Domain Wall Propagation

A theory of voltage-induced control of magnetic domain walls propagating along the major axis of a magnetostrictive nanostrip, tightly coupled with a ceramic piezoelectric, is developed in the framework of the Landau–Lifshitz–Gilbert equation. It is assumed that the strains undergone by the piezoelectric actuator, subject to an electric field generated by a dc bias voltage applied through a couple of lateral electrodes, are fully transferred to the magnetostrictive layer. Taking into account these piezo-induced strains and considering a magnetostrictive linear elastic material belonging to the cubic crystal class, the magnetoelastic field is analytically determined. Therefore, by using the classical traveling-wave formalism, the explicit expressions of the most important features characterizing the two dynamical regimes of domain-wall propagation have been deduced, and their dependence on the electric field strength has been highlighted. Moreover, some strategies to optimize such a voltage-induced control, based on the choice of the ceramic piezoelectric material and the orientation of dielectric poling and electric field with respect to the reference axes, have been proposed.

Electric field induced drift motion of magnetic domain walls

1994 ◽  
Vol 162 (1) ◽  
pp. 293-297 ◽  
Author(s):  
A. L. Sukstanskii ◽  
V. I. Gerasimchuk
Keyword(s):  
Electric Field ◽  
Domain Walls ◽  
Magnetic Domain ◽  
Drift Motion ◽  
Magnetic Domain Walls

scholarly journals Effective pinning energy landscape perturbations for propagating magnetic domain walls

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
D. M. Burn ◽  
D. Atkinson
Keyword(s):  
Domain Wall ◽  
Domain Walls ◽  
Energy Landscape ◽  
Magnetic Domain ◽  
Wall Structure ◽  
Magnetic Domain Wall ◽  
Magnetic Domain Walls ◽  
Periodic Behaviour ◽  
Domain Wall Structure ◽  
Magnetization Processes

Abstract The interaction between a magnetic domain wall and a pinning site is explored in a planar nanowire using micromagnetics to reveal perturbations of the pinning energetics for propagating domain walls. Numerical simulations in the high damping ’quasi-static’ and low damping ’dynamic’ regimes are compared and show clear differences in de-pinning fields, indicating that dynamical micromagnetic models, which incorporate precessionally limited magnetization processes, are needed to understand domain wall pinning. Differences in the micromagnetic domain wall structure strongly influence the pinning and show periodic behaviour with increasing applied field associated with Walker breakdown. In the propagating regime pinning is complicated.

scholarly journals Electric-field-driven dynamics of magnetic domain walls in magnetic nanowires patterned on ferroelectric domains

2016 ◽  
Vol 18 (3) ◽  
pp. 033027 ◽  
Author(s):  
Ben Van de Wiele ◽  
Jonathan Leliaert ◽  
Kévin J A Franke ◽  
Sebastiaan van Dijken
Keyword(s):  
Electric Field ◽  
Domain Walls ◽  
Magnetic Domain ◽  
Magnetic Nanowires ◽  
Ferroelectric Domains ◽  
Magnetic Domain Walls

Electric-field assisted depinning and nucleation of magnetic domain walls in FePt/Al2O3/liquid gate structures

2014 ◽  
Vol 104 (8) ◽  
pp. 082413 ◽  
Author(s):  
L. Herrera Diez ◽  
A. Bernand-Mantel ◽  
L. Vila ◽  
P. Warin ◽  
A. Marty ◽  
...  
Keyword(s):  
Electric Field ◽  
Domain Walls ◽  
Magnetic Domain ◽  
Magnetic Domain Walls

Magnetic domain wall movement in iron silicon

1993 ◽  
Vol 51 ◽  
pp. 1044-1045
Author(s):  
J.E. Wittig
Keyword(s):  
Domain Wall ◽  
Domain Walls ◽  
Magnetic Domain ◽  
Magnetic Domain Wall ◽  
Silicon Alloys ◽  
Iron Silicon ◽  
Domain Wall Movement ◽  
Wall Movement ◽  
Magnetic Domain Walls

Lorentz microscopy in the transmission electron microscope directly images magnetic domains. By changing the magnetic field of the electromagnetic lenses relative to the specimen plane, the movement of the magnetic domain walls and their interaction with microstructural features can be observed in situ. This type of experiment has successfully analyzed the microstructure-domain wall interactions in spinel ferrites and iron-rare-earth-boron magnetic materials. The domain wall motion reveals the qualitative pinning potential of grain boundaries, precipitates, inclusions, stacking faults, and cracks. In addition, these in situ experiments display the dynamics of magnetic domain nucleation. The current study investigates the magnetic domain wall movement in iron silicon alloys. Since magnetic properties such as intrinsic coercivity and permeability are structure sensitive, the influence of microstructure on domain wall movement dictates the soft magnetic behavior.Thin foils of iron-6.5 wt% silicon were prepared by electropolishing ribbons produced by melt spinning techniques. The magnetic domain walls were imaged in the defocused (Fresnel) mode with a Philips CM20T operated at 200 kV.

Magnetic Domain Walls in Nanowires

MRS Bulletin ◽  
2006 ◽  
Vol 31 (5) ◽  
pp. 395-399 ◽  
Author(s):  
Rolf Allenspach ◽  
Pierre-Olivier Jubert
Keyword(s):  
Domain Wall ◽  
Domain Walls ◽  
Magnetic Domain ◽  
Electrical Current ◽  
Spin Transfer ◽  
Wall Structure ◽  
Conduction Electrons ◽  
Magnetic Domain Walls ◽  
Complex Spin ◽  
Small Elements

AbstractFor many decades, it was assumed that the characteristics of magnetic domain walls were determined by material properties and the walls were moved by magnetic fields.In the past few years, it has been shown that domain walls behave differently on the nanometer scale.Domain walls in small elements exhibit complex spin arrangements that strongly deviate from the wall types commonly encountered in magnetic thin-film systems, and they can be modified by changing the geometry of the element.Domain walls in nanowires can also be moved by injecting electrical current pulses.Whereas wall propagation is qualitatively explained by a spin transfer from the conduction electrons to the spins of the domain wall, important aspects of the observations cannot be explained by present models.Examples include the observation of a drastic transformation of the wall structure upon current injection and domain wall velocities that tend to be orders of magnitude smaller than anticipated from theory.

scholarly journals High-speed domain wall racetracks in a magnetic insulator

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Saül Vélez ◽  
Jakob Schaab ◽  
Martin S. Wörnle ◽  
Marvin Müller ◽  
Elzbieta Gradauskaite ◽  
...  
Keyword(s):  
Domain Wall ◽  
High Speed ◽  
Domain Walls ◽  
Magnetic Domain ◽  
Nitrogen Vacancy ◽  
Electrical Currents ◽  
Magnetic Insulators ◽  
Magnetic Domain Walls ◽  
Current Threshold ◽  
Current Lines

Abstract Recent reports of current-induced switching of ferrimagnetic oxides coupled to heavy metals have opened prospects for implementing magnetic insulators into electrically addressable devices. However, the configuration and dynamics of magnetic domain walls driven by electrical currents in insulating oxides remain unexplored. Here we investigate the internal structure of the domain walls in Tm3Fe5O12 (TmIG) and TmIG/Pt bilayers, and demonstrate their efficient manipulation by spin–orbit torques with velocities of up to 400 ms−1 and minimal current threshold for domain wall flow of 5 × 106 A cm−2. Domain wall racetracks are defined by Pt current lines on continuous TmIG films, which allows for patterning the magnetic landscape of TmIG in a fast and reversible way. Scanning nitrogen-vacancy magnetometry reveals that the domain walls of TmIG thin films grown on Gd3Sc2Ga3O12 exhibit left-handed Néel chirality, changing to an intermediate Néel–Bloch configuration upon Pt deposition. These results indicate the presence of interfacial Dzyaloshinskii–Moriya interaction in magnetic garnets, opening the possibility to stabilize chiral spin textures in centrosymmetric magnetic insulators.

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