scholarly journals Metallurgical Tests in Endodontics: A Narrative Review

2022 ◽  
Vol 9 (1) ◽  
pp. 30
Author(s):  
Alessio Zanza ◽  
Marco Seracchiani ◽  
Rodolfo Reda ◽  
Gabriele Miccoli ◽  
Luca Testarelli ◽  
...  
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ion Beam ◽  
Narrative Review ◽  
Metallographic Analysis ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Rotary Instruments ◽  
Niti Rotary Instruments

Since there are no reviews of the literature on this theme, the aim of this narrative review is to summarize the metallurgical tests used in endodontics, pointing out their functional use and their pros and cons and giving readers a user-friendly guide to serve as an orientation aid in the plethora of metallurgical tests. With this purpose, a literature search for articles published between January 2001 and December 2021 was conducted, using the electronic database PubMed to collect all published articles regarding the metallurgical tests used in endodontics for the evaluation of NiTi rotary instruments. The search was conducted using the following keywords: “metallurgy”, “differential scanning calorimetry” (DSC), “X-ray diffraction” (XRD), “atomic force microscopy” (AFM), “energy-dispersive X-ray spectroscopy” (EDS), “focused ion beam analysis” (FIB) and “Auger electron spectroscopy” (AES) combined with the term “endodontics” or “NiTi rotary instruments”. Considering the inclusion and exclusion criteria, of the 248 articles found, only 81 were included in the narrative review. According to the results, more than 50% of the selected articles were published in one of the two most relevant journals in endodontics: International Endodontic Journal (22.2%) and Journal of Endodontics (29.6%). The most popular metallurgical test was DSC, with 43 related articles, followed by EDS (33 articles), AFM (22 articles) and XRD (21 articles). Few studies were conducted using other tests such as FIB (2 articles), micro-Raman spectroscopy (4 articles), metallographic analysis (7 articles) and Auger electron spectroscopy (2 articles).

scholarly journals The Effect of Stress in the Density of States of Amorphous Carbon Films Determined by X-Ray Excited Auger Electron Spectroscopy

2017 ◽  
Vol 2017 ◽  
pp. 1-5 ◽  
Author(s):  
P. F. Barbieri ◽  
F. C. Marques
Keyword(s):  
Auger Electron Spectroscopy ◽  
Density Of States ◽  
Amorphous Carbon ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ion Beam ◽  
Carbon Films ◽  
Film Stress ◽  
Amorphous Carbon Films ◽  
X Ray

Amorphous carbon films can be prepared with a large variety of structure and have been used in a number of technological applications. Many of their properties have been determined, but very little is known concerning the effect of pressure on their properties. In this work we investigate the influence of pressure of graphite-like amorphous carbon films on the density of states (DOS) using X-ray Excited Auger Electron Spectroscopy (XAES) and the second derivate method of the XAES. The films were deposited by ion beam deposition and simultaneously bombarded with argon, which is responsible for the variation of the film stress, reaching extremely high values (4.5 GPa). Marked variations of the density of states of the pπ, pσ, sp, and s components were observed with increasing stress.

scholarly journals Silicon-Based Coatings on Niobium Metal

1989 ◽  
Vol 170 ◽  
Author(s):  
P. D. Stupik ◽  
T. R. Jervis ◽  
M. Nastasi ◽  
M. M. Donovan ◽  
A. R. Barron
Keyword(s):  
Auger Electron Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
X Ray ◽  
Silicon Based

AbstractSilicon coatings on niobium substrates were subjected to thermal, ion beam and laser mixing, and the effectiveness of the different methods for the synthesis of graded interfaces was compared. The resulting metal/silicon interfaces were characterized by X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and Rutherford backscattering (RBS).

Auger electron spectroscopy and x-ray photoelectron spectroscopy analysis of angle of incidence effects of ion beam nitridation of GaAs

1998 ◽  
Vol 13 (7) ◽  
pp. 1799-1807 ◽  
Author(s):  
J. S. Pan ◽  
C. H. A. Huan ◽  
A. T. S. Wee ◽  
H. S. Tan ◽  
K. L. Tan
Keyword(s):  
Surface Layer ◽  
Auger Electron Spectroscopy ◽  
Angular Dependence ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Incident Angle ◽  
Ion Beam ◽  
X Ray ◽  
Preferential Sputtering

Ion beam nitridation (IBN) of GaAs at room temperature was studied as a function of N2+ ion incident angle at ion energy of 10 keV. The ion beam bombardment surface area of GaAs was characterized in situ by both Auger electron spectroscopy (AES) and small spot-size x-ray photoelectron spectroscopy (XPS). Thin GaN reaction layers are formed at all N2+ ion incident angles, whereas the formation of As–N bonds has not been found. However, the degree of nitridation of Ga decreases with increasing incident angle. The observed angular dependence of the N incorporation can be explained in terms of sputtering yield, indicating that the growth kinetics can be described as a dynamic process comprising the accumulation of N and sputter removal of the surface layer. N2+ ion bombardment causes the depletion of As from the surface region because of the preferential sputtering of As from GaAs. The preferential sputtering of As reduces with increasing N2+ ion incident angle. The angular dependent behavior of preferential sputtering of As by 10 keV N2+ ions can be attributed to the angular dependence of GaN surface layer formation.

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