scholarly journals Indium-Incorporation with InxGa1-xN Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy

Crystals ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 308 ◽  
Author(s):  
ChengDa Tsai ◽  
Ikai Lo ◽  
YingChieh Wang ◽  
ChenChi Yang ◽  
HongYi Yang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Flux Ratio ◽  
Indium Content ◽  
High Indium Content

Indium-incorporation with InxGa1-xN layers on GaN-microdisks has been systematically studied against growth parameters by plasma-assisted molecular beam epitaxy. The indium content (x) of InxGa1-xN layer increased to 44.2% with an In/(In + Ga) flux ratio of up to 0.6 for a growth temperature of 620 °C, and quickly dropped with a flux ratio of 0.8. At a fixed In/(In + Ga) flux ratio of 0.6, we found that the indium content decreased as the growth temperature increased from 600 °C to 720 °C and dropped to zero at 780 °C. By adjusting the growth parameters, we demonstrated an appropriate InxGa1-xN layer as a buffer to grow high-indium-content InxGa1-xN/GaN microdisk quantum wells for micro-LED applications.

1.3 µm high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

2006 ◽  
Vol 3 (3) ◽  
pp. 631-634
Author(s):  
Zhichuan Niu ◽  
Shiyong Zhang ◽  
Haiqiao Ni ◽  
Donghai Wu ◽  
Zhenhong He ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Indium Content ◽  
High Indium Content

scholarly journals Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

2015 ◽  
Vol 118 (15) ◽  
pp. 155301 ◽  
Author(s):  
C. Bazioti ◽  
E. Papadomanolaki ◽  
Th. Kehagias ◽  
T. Walther ◽  
J. Smalc-Koziorowska ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Indium Content ◽  
High Indium Content ◽  
Compositional Grading

scholarly journals High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy

2016 ◽  
Vol 454 ◽  
pp. 164-172 ◽  
Author(s):  
Erin C.H. Kyle ◽  
Stephen W. Kaun ◽  
Feng Wu ◽  
Bastien Bonef ◽  
James S. Speck
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Indium Content ◽  
High Indium Content

scholarly journals Структурные свойства тонких пленок кристаллического топологического изолятора Pb-=SUB=-0.7-=/SUB=-Sn-=SUB=-0.3-=/SUB=-Te на Si(111)

2021 ◽  
Vol 55 (8) ◽  
pp. 625
Author(s):  
А.К. Кавеев ◽  
Д.Н. Бондаренко ◽  
О.Е. Терещенко
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Technological Growth

In this work, the selection and optimization of technological growth parameters of thin Pb0.7Sn0.3Te layers up to 300 nm thick, grown on the Si(111) surface at temperatures of 230−400◦C by the method of molecular beam epitaxy was carried out. The surface morphology of the films was studied, and the epitaxial relations were determined. It was shown that, depending on the growth temperature, the surface morphology ranges from relatively narrow terraces to smooth micrometer-sized islands with monoatomic steps on their surface.

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