scholarly journals Attaining Low Lattice Thermal Conductivity in Half-Heusler Sublattice Solid Solutions: Which Substitution Site Is Most Effective?

2022 ◽  
Vol 3 (1) ◽  
pp. 1-14
Author(s):  
Rasmus Tranås ◽  
Ole Martin Løvvik ◽  
Kristian Berland

Low thermal conductivity is an important materials property for thermoelectricity. The lattice thermal conductivity (LTC) can be reduced by introducing sublattice disorder through partial isovalent substitution. Yet, large-scale screening of materials has seldom taken this opportunity into account. The present study aims to investigate the effect of partial sublattice substitution on the LTC. The study relies on the temperature-dependent effective potential method based on forces obtained from density functional theory. Solid solutions are simulated within a virtual crystal approximation, and the effect of grain-boundary scattering is also included. This is done to systematically probe the effect of sublattice substitution on the LTC of 122 half-Heusler compounds. It is found that substitution on the three different crystallographic sites leads to a reduction of the LTC that varies significantly both between the sites and between the different compounds. Nevertheless, some common criteria are identified as most efficient for reduction of the LTC: The mass contrast should be large within the parent compound, and substitution should be performed on the heaviest atoms. It is also found that the combined effect of sublattice substitution and grain-boundary scattering can lead to a drastic reduction of the LTC. The lowest LTC of the current set of half-Heusler compounds is around 2 W/Km at 300 K for two of the parent compounds. Four additional compounds can reach similarly low LTC with the combined effect of sublattice disorder and grain boundaries. Two of these four compounds have an intrinsic LTC above ∼15 W/Km, underlining that materials with high intrinsic LTC could still be viable for thermoelectric applications.

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Hidetoshi Miyazaki ◽  
Tomoyuki Tamura ◽  
Masashi Mikami ◽  
Kosuke Watanabe ◽  
Naoki Ide ◽  
...  

AbstractHalf-Heusler compound has drawn attention in a variety of fields as a candidate material for thermoelectric energy conversion and spintronics technology. When the half-Heusler compound is incorporated into the device, the control of high lattice thermal conductivity owing to high crystal symmetry is a challenge for the thermal manager of the device. The calculation for the prediction of lattice thermal conductivity is an important physical parameter for controlling the thermal management of the device. We examined whether lattice thermal conductivity prediction by machine learning was possible on the basis of only the atomic information of constituent elements for thermal conductivity calculated by the density functional theory in various half-Heusler compounds. Consequently, we constructed a machine learning model, which can predict the lattice thermal conductivity with high accuracy from the information of only atomic radius and atomic mass of each site in the half-Heusler type crystal structure. Applying our results, the lattice thermal conductivity for an unknown half-Heusler compound can be immediately predicted. In the future, low-cost and short-time development of new functional materials can be realized, leading to breakthroughs in the search of novel functional materials.


1991 ◽  
Vol 234 ◽  
Author(s):  
Paul G. Klfmens

ABSTRACTThe lattice thermal conductivity of 80-20 Si-Ge is treated theoretically for the case of the Fermi energy positioned for optimum figure of merit. The spectral distribution of the lattice conductivity is limited by anharmonic interactions, by the randomness of the Si-Ge lattice and, at low frequencies, by the interaction with free carriers and neutral donors. The two latter processes dominate over grain boundary scattering. The spectral conductivity is sharply peaked around 0.1 of the Debye frequency. A further reduction in lattice conductivity can be obtained by small insulating inclusions. This is partially offset by a reduction in electronic conductivity, but results in some improvement in the figure of merit.


Author(s):  
Timothy S. English ◽  
Justin L. Smoyer ◽  
John C. Duda ◽  
Pamela M. Norris ◽  
Thomas E. Beecham ◽  
...  

This work develops a new model for calculating the thermal conductivity of polycrystalline silicon using an effective medium approach which discretizes the contribution to thermal conductivity into that of the grain and grain boundary regions. While the Boltzmann transport equation under the relaxation time approximation is used to model the grain thermal conductivity, a lower limit thermal conductivity model for disordered layers is applied in order to more accurately treat phonon scattering in the grain boundary regions, which simultaneously removes the need for fitting parameters frequently used in the traditional formation of grain boundary scattering times. The contributions of the grain and grain boundary regions are then combined using an effective medium approach to compute the total thermal conductivity. The model is compared to experimental data from literature for both undoped and doped polycrystalline silicon films. In both cases, the new model captures the correct temperature dependent trend and demonstrates good agreement with experimental thermal conductivity data from 20 to 300K.


2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Matthias Schrade ◽  
Kristian Berland ◽  
Simen N. H. Eliassen ◽  
Matylda N. Guzik ◽  
Cristina Echevarria-Bonet ◽  
...  

2001 ◽  
Vol 691 ◽  
Author(s):  
Theodora Kyratsi ◽  
Jeffrey S. Dyck ◽  
Wei Chen ◽  
Duck-Young Chung ◽  
Ctirad Uher ◽  
...  

ABSTRACTOur efforts to improve the thermoelectric properties of β-K2Bi8Se13, led to systematic studies of solid solutions of the type β-K2Bi8−xSbxSe13. The charge transport properties and thermal conductivities were studied for selected members of the series. Lattice thermal conductivity decreases due to the mass fluctuation generated in the lattice by the mixed occupation of Sb and Bi atoms. Se excess as a dopant was found to increase the figure-of merit of the solid solutions.


2020 ◽  
Author(s):  
Troels Markussen ◽  
Shela Aboud ◽  
Anders Blom ◽  
Nicholas A. Lanzillo ◽  
Tue Gunst ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document