scholarly journals D-Dot Sensor Response Improvement in the Evaluation of High-Power Microwave Pulses

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 123
Author(s):  
Jacek Jakubowski ◽  
Marek Kuchta ◽  
Roman Kubacki

This article investigates the issue of measuring high-power microwave (HPM) pulses. The high energy of these pulses poses a significant threat to many electronic systems, including those used to manage critical infrastructure. This work focuses on requirements for a potential portable measurement device and suggests the application of a method for this purpose, involving the use of a D-dot sensor and a rapid A/D converter. The applied converter enables recording the time waveform on the measuring chain output, also in the case of repetition and time duration of HPM signals. The authors also present a quantitative description of signal processing by the analogue section of the measurement chain solution presented herein and suggest algorithms for digital processing of the signals, the objective of which is to minimize low-frequency interference in the process of reconstructing the time waveform of an electric field using numerical integration.

2018 ◽  
Author(s):  
Artem Kuskov ◽  
Joe Chen ◽  
Maxwell Lerma ◽  
Thomas Schmidt ◽  
Salvador Portillo

2002 ◽  
Author(s):  
Miroslav Joler ◽  
Christos Christodoulou ◽  
John Gaudet ◽  
Edl Schamiloglu ◽  
Karl Schoenbach ◽  
...  

1999 ◽  
Vol 595 ◽  
Author(s):  
N. Pala ◽  
R. Gaska ◽  
M. Shur ◽  
J. W Yang ◽  
M. Asif Khan

AbstractThe low-frequency noise in GaN-based Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors (MOS-HFETs) and HFETs on sapphire and n-SiC substrates were studied. Hooge parameter at zero gate bias was calculated about 8 × 10−4 for both types of the devices. The AlGaN/GaN MOS-HFETs exhibited extremely low gate leakage current and much lower noise at both positive and negative gate biases. These features demonstrate the high quality of the SiO2/AlGaN heterointerface and feasibility of this technology for high-power microwave transmitter and high-power, high-temperature switches.


2000 ◽  
Vol 5 (S1) ◽  
pp. 612-618
Author(s):  
N. Pala ◽  
R. Gaska ◽  
M. Shur ◽  
J. W Yang ◽  
M. Asif Khan

The low-frequency noise in GaN-based Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors (MOS-HFETs) and HFETs on sapphire and n-SiC substrates were studied. Hooge parameter at zero gate bias was calculated about 8 × 10−4 for both types of the devices. The AlGaN/GaN MOS-HFETs exhibited extremely low gate leakage current and much lower noise at both positive and negative gate biases. These features demonstrate the high quality of the SiO2/AlGaN heterointerface and feasibility of this technology for high-power microwave transmitter and high-power, high-temperature switches.


2019 ◽  
Vol 139 (10) ◽  
pp. 421-427
Author(s):  
Kazuki Nagao ◽  
Wataru Takatsu ◽  
Pham Van Thuan ◽  
Taichi Sugai ◽  
Weihua Jiang

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