Configuration of an Energy Storage System Considering the Frequency Response and the Dynamic Frequency Dispersion

The high proportion of renewable energy sources (RESs) in the system reduces the frequency support capacity and aggravates the generation of unbalanced power, while the dynamic frequency dispersion makes it difficult for a centralized energy storage system (ESS) to take into account the frequency requirements of different regions. In this context, the research takes the region with high penetration of RESs and frequent power fluctuations as the grid node of the ESS. By configuring the parameters of the ESS under the control strategy of virtual synchronous generators, the inertia and the primary frequency reserve of the system are supplemented, and the regulation characteristics of the ESS are depicted. Taking the steady-state recovery time and the amplitude coefficient as the evaluation indexes, the effects of the virtual inertia constant, the virtual damping coefficient, and the virtual frequency regulation coefficient on the behavior of the ESS are deeply analyzed. Finally, the quantitative configuration of the ESS is realized by considering the frequency response and the dynamic frequency dispersion.

Modulation in Electric Conduction of PVK and Ferrocene-Doped PVK Thin Films

In this article, the dielectric properties of poly (9-vinylcarbazole) (PVK) and ferrocene-doped PVK thin films are studied. The thin films were grown by the isothermal solution casting technique. Dielectric properties of grown films were studied as function of ferrocene concentration, frequency, and temperature. The relative permittivity (ε′) is increased with increasing ferrocene percentage (~1%) due to the free charge carriers. The relative permittivity decreases for higher ferrocene percentage (~2%). However, the relative permittivity of PVK and ferrocene-doped PVK samples remains almost constant for studied temperature range (313–413 K). The frequency dependence of tan δ for all samples is studied. The frequency dependence of dielectric parameter exhibits frequency dispersion behavior, which suggests all types of polarization present in the lower frequency range. The loss tangent (tanδ) values are larger at higher temperatures in the low frequency region. However, the tan δ values at different temperatures are almost similar in the high frequency region. It is observed that the relative permittivity is maximum, dielectric loss is minimum, and AC conductivity is minimum for 1% ferrocene doped PVK as compared to pure PVK and 2% ferrocene doped PVK samples.

A Novel Simulation Modeling Method and Hardware Implementation for Doppler Power Spectrum of LEO Satellite Based on Error Compensations by Parting Sinusoid with Random AOA and Correlation Piecewise Convergence

Low Earth Orbit (LEO) Satellite Internet Network (LEO-SIN) is a promising approach to global Gigabit per second (Gbps) broadband communications in the coming sixth-generation (6G) era. This paper mainly focuses on the innovation of accuracy improvement of simulation modeling of the Doppler Power Spectrum (DPS) of satellite channels in LEO-SIN. Existing DPS modeling methods are based on Rice’s Sum-of-Sinusoids (SOS) which have obvious modeling errors in scenarios with main signal propagation paths, asymmetrical power spectrum, and random multi-path signals with a random Angle of Arrival (AOA) in LEO-SIN. There are few state-of-art researches devoted to higher accuracy of DPS modeling for simulation. Therefore, this paper proposes a novel Random Method of Exact Doppler Spread method Set Partitioning (RMEDS-SP). Distinct from existed researches, we firstly model the DPS of LEO-SIN, which more accurately describes the characteristics of frequency dispersion with the main path and multi-path signals with random AOA. Furthermore, piecewise functions to the Autocorrelation Function (ACF) of RMEDS-SP is first exploited to converge the modeling error supposition with time by periodic changes, which further improve the accuracy of the DPS model. Experimental results show that the accuracy of DPS in our proposed model is improved by 32.19% and 18.52%, respectively when compared with existing models.

High-Frequency Features in the Distribution of Relaxation Times Related to Frequency Dispersion Effects in SOFCs

Electrochemical impedance spectroscopy (EIS) is commonly used for the characterization of electrochemical systems, such as solid oxide fuel cells (SOFCs). In recent years, the distribution of relaxation times (DRT) analysis has attracted increasing interest as a tool for investigating electrochemical loss mechanisms in fuel cells due to its ability to resolve electrochemical features that overlap in complex planes. Among the methods used for the deconvolution of the distribution function of relaxation times, DRTtools is commonly used due to its user-friendly graphical user interface. In this study, we investigate the root cause of the expression of additional DRT features in the high-frequency range and link them to characteristic properties of the processes that contribute to the polarization loss of SOFCs. Identification of the root cause leading to the expression of the features is performed by conducting a simulation study with synthetic EIS spectra that are then analyzed using DRTtools. It has been shown that the constant phase element behavior of high-frequency processes in SOFCs is the root cause of the expression of additional peaks in the high-frequency range of the DRT.

Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties

The buffer and surface trapping effects on low-frequency (LF) Y-parameters of Fe-doped AlGaN/GaN high-electron mobility transistors (HEMTs) are analyzed through experimental and simulation studies. The drain current transient (DCT) characterization is also carried out to complement the trapping investigation. The Y22 and DCT measurements reveal the presence of an electron trap at 0.45–0.5 eV in the HEMT structure. On the other hand, two electron trap states at 0.2 eV and 0.45 eV are identified from the LF Y21 dispersion properties of the same device. The Y-parameter simulations are performed in Sentaurus TCAD in order to detect the spatial location of the traps. As an effective approach, physics-based TCAD models are calibrated by matching the simulated I-V with the measured DC data. The effect of surface donor energy level and trap density on the two-dimensional electron gas (2DEG) density is examined. The validated Y21 simulation results indicate the existence of both acceptor-like traps at EC –0.45 eV in the GaN buffer and surface donor states at EC –0.2 eV in the GaN/nitride interface. Thus, it is shown that LF Y21 characteristics could help in differentiating the defects present in the buffer and surface region, while the DCT and Y22 are mostly sensitive to the buffer traps.

Possible Equivalent Circuit Model and Physical Structures of Sputter-Deposited Silicon Oxide Film Showing Resistive Switching

Based on the results of experiments on the resistive switching behaviors of sputter-deposited silicon oxide films, this paper proposes a possible equivalent circuit model to characterize the switching behavior. It is revealed that frequency dispersion of the conductance component and capacitance component in the equivalent circuit model dominate the physical interpretation of the frequency-dependence of the components. The validity of the model and its physical interpretation are examined based on a theoretical model of the dielectric function of the conductive filament region. The polarizability of the conductive filament region suggests that the capacitance component of the conductive filament is insensitive to frequency in the low frequency range, whereas the conductance component of the conductive filament is proportional to frequency in the low frequency range. These theoretical results match experimental findings, and it is revealed that the equivalent circuit models and the frequency dispersion models for the capacitance and conductance component of the silicon oxide film are acceptable. In addition, this paper reveals the importance of the sub-oxide region and the Si precipitate region in determining the resistive switching behaviors of sputter-deposited silicon oxide film.

Detection and blind channel estimation for UAV-aided wireless sensor networks in smart cities under mobile jamming attack

Unmanned aerial vehicles (UAVs) can be integrated into wireless sensor networks (WSNs) for smart city applications in several ways. Among them, a UAV can be employed as a relay in a “store-carry and forward” fashion by uploading data from ground sensors and metering devices and, then, downloading it to a central unit. However, both the uploading and downloading phases can be prone to potential threats and attacks. As a legacy from traditional wireless networks, the jamming attack is still one of the major and serious threats to UAV-aided communications, especially when also the jammer is mobile, e.g., it is mounted on a UAV or inside a terrestrial vehicle. In this paper, we investigate anti-jamming communications for UAV-aided WSNs operating over doubly-selective channels in the downloading phase. In such a scenario, the signals transmitted by the UAV and the malicious mobile jammer undergo both time dispersion due to multipath propagation effects and frequency dispersion caused by their mobility. To suppress high-power jamming signals, we propose a blind physical-layer technique that jointly detects the UAV and jammer symbols through serial disturbance cancellation based on symbol-level post-sorting of the detector output. Amplitudes, phases, time delays, and Doppler shifts – required to implement the proposed detection strategy – are blindly estimated from data through the use of algorithms that exploit the almost-cyclostationarity properties of the received signal and the detailed structure of multicarrier modulation format. Simulation results corroborate the anti-jamming capabilities of the proposed method, for different mobility scenarios of the jammer.

Comparative analysis of dielectric, shear mechanical and light scattering response functions in polar supercooled liquids

The studies of molecular dynamics in the vicinity of liquid–glass transition are an essential part of condensed matter physics. Various experimental techniques are usually applied to understand different aspects of molecular motions, i.e., nuclear magnetic resonance (NMR), photon correlation spectroscopy (PCS), mechanical shear relaxation (MR), and dielectric spectroscopy (DS). Universal behavior of molecular dynamics, reflected in the invariant distribution of relaxation times for different polar and weekly polar glass-formers, has been recently found when probed by NMR, PCS, and MR techniques. On the other hand, the narrow dielectric permittivity function ε*(f) of polar materials has been rationalized by postulating that it is a superposition of a Debye-like peak and a broader structural relaxation found in NMR, PCS, and MR. Herein, we show that dielectric permittivity representation ε*(f) reveals details of molecular motions being undetectable in the other experimental methods. Herein we propose a way to resolve this problem. First, we point out an unresolved Johari–Goldstein (JG) β-relaxation is present nearby the α-relaxation in these polar glass-formers. The dielectric relaxation strength of the JG β-relaxation is sufficiently weak compared to the α-relaxation so that the narrow dielectric frequency dispersion faithfully represents the dynamic heterogeneity and cooperativity of the α-relaxation. However, when the other techniques are used to probe the same polar glass-former, there is reduction of relaxation strength of α-relaxation relative to that of the JG β relaxation as well as their separation. Consequently the α relaxation appears broader in frequency dispersion when observed by PCS, NMR and MR instead of DS. The explanation is supported by showing that the quasi-universal broadened α relaxation in PCS, NMR and MR is captured by the electric modulus M*(f) = 1/ε*(f) representation of the dielectric measurements of polar and weakly polar glass-formers, and also M*(f) compares favorably with the mechanical shear modulus data G*(f).