scholarly journals Bulk Bias as an Analog Single-Event Transient Mitigation Technique with Negligible Penalty

Electronics ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 27
Author(s):  
Jingtian Liu ◽  
Qian Sun ◽  
Bin Liang ◽  
Jianjun Chen ◽  
Yaqing Chi ◽  
...  
Keyword(s):  
Circuit Design ◽  
Analog Circuits ◽  
Analog Circuit ◽  
Forward Bias ◽  
Cmos Technology ◽  
Common Source ◽  
Single Event ◽  
Single Event Transient ◽  
Body Effect ◽  
Radiation Hardened

In analog circuit design, the bulks of MOSFETs can be tied to their respective sources to remove body effect. This paper models and analyzes the sensitivity of single-event transients (SETs) in common source (CS) amplifier with bulk tied to source (BTS) in 40 nm twin-well bulk CMOS technology. The simulation results present that the proposed BTS radiation-hardened-by-design (RHBD) technique can reduce charge collection and suppress the SET induced perturbation effectively in various input conditions of the circuit. The detailed analysis shows that the mitigation of SET is primarily due to the forward-bias of bulk potential. This technique is universally applicable in radiation-hardening design for analog circuits with negligible penalty.

A SEE Hardened Read-Out Circuit of EEPROM for Space Application

2012 ◽  
Vol 198-199 ◽  
pp. 1105-1109
Author(s):  
Xin Jie Zhou ◽  
Jing He Wei ◽  
Lei Lei Li
Keyword(s):  
Circuit Design ◽  
Space Application ◽  
Single Event Upset ◽  
Single Event ◽  
Single Event Transient ◽  
Single Event Effect ◽  
Radiation Hardened

As wide application of EEPROM devices in space and military field, more and more researches focus on its radiation hardened characteristics in international. To improve the single-event effect (SEE) tolerant ability of read-out circuits in the memory, a radiation hardened circuit is designed. The design kernels of radiation hardened latch-flip are given and designed to resist the single-event upset (SEU) effect. A correction circuit is proposed to resist the single-event transient (SET) effect. The performances of this design are: SEU (LET)th ≥ 27 MeV•cm2/mg, SEL(LET)th ≥ 75 MeV•cm2/mg , read out time ≤200 ns. The new design not only satisfied the needs of present work, but supplies a worthful reference for radiation hardened circuit design in future.

scholarly journals Analog Circuit Design Automation Tool Using Genetic Algorithms

1970 ◽  
Vol 1 (1) ◽  
Author(s):  
Y. M. A. Khalifa ◽  
D. H. Horrocks
Keyword(s):  
Genetic Algorithms ◽  
Circuit Design ◽  
Analog Circuits ◽  
Computer Aided Design ◽  
Degrees Of Freedom ◽  
Analog Circuit ◽  
Search Space ◽  
Design Stage ◽  
Specific Frequency ◽  
Aided Design

An investigation into the application of Genetic Algorithms (GA) for the design of electronic analog circuits is presented in this paper. In this paper an investigation of the use of genetic algorithms into the problem of analog circuits design is presented. In a single design stage, circuits are produced that satisfy specific frequency response specifications using circuit structures that are unrestricted and with component values that are chosen from a set of preferred values. The extra degrees of freedom resulting from unbounded circuit structures create a huge search space. It is shown in this paper that Genetic Algorithms can be successfully used to search this space. The application chosen is a LC all pass ladder filter circuit design.Key Words: Computer-Aided Design, Analog Circuits, Artificial Intelligence.

Research on the effect of single-event transient of an on-chip linear voltage regulator fabricated on 130 nm commercial CMOS technology

2017 ◽  
Vol 73 ◽  
pp. 116-121 ◽  
Author(s):  
QiFeng Zhao ◽  
GuoQing Yang ◽  
YongJie Sun ◽  
PeiFu Yu ◽  
JianJun Chen ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Voltage Regulator ◽  
Single Event ◽  
Single Event Transient ◽  
On Chip ◽  
Linear Voltage

Research on single event transient pulse quenching effect in 90 nm CMOS technology

2011 ◽  
Vol 54 (11) ◽  
pp. 3064-3069 ◽  
Author(s):  
JunRui Qin ◽  
ShuMing Chen ◽  
BiWei Liu ◽  
JianJun Chen ◽  
Bin Liang ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Single Event ◽  
Single Event Transient ◽  
Quenching Effect

A radiation-hardened-by-design technique for improving single-event transient tolerance of charge pumps in PLLs

2009 ◽  
Vol 30 (12) ◽  
pp. 125009 ◽  
Author(s):  
Zhao Zhenyu ◽  
Zhang Minxuan ◽  
Chen Shuming ◽  
Chen Jihua ◽  
Li Junfeng
Keyword(s):  
Single Event ◽  
Design Technique ◽  
Single Event Transient ◽  
Charge Pumps ◽  
Radiation Hardened ◽  
Radiation Hardened By Design
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