scholarly journals Electrical Characterization of MIS Schottky Barrier Diodes Based on Nanostructured Porous Silicon and Silver Nanoparticles with Applications in Solar Cells

Energies ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2165 ◽  
Author(s):  
Rehab Ramadan ◽  
Raúl J. Martín-Palma

The accurate determination of the electrical properties of photovoltaic devices is of utmost importance to predict and optimize their overall optoelectronic performance. For example, the minority carrier lifetime and the carrier diffusion length have a strong relationship with the carrier recombination rate. Additionally, parasitic resistances have an important effect on the fill factor of a solar cell. Within this context, the alternating current (AC) and direct current (DC) electrical characteristics of Si-based metal–insulator–semiconductor (MIS) Schottky barrier diodes with the basic structure Al/Si/TiO2/NiCr were studied, aiming at using them as photovoltaic devices. The basic diode structure was modified by adding nanostructured porous silicon (nanoPS) layers and by infiltrating silver nanoparticles (AgNPs) into the nanoPS layers, leading to Al/Si+nanoPS/TiO2/NiCr and Al/Si+nanoPS+AgNPs/TiO2/NiCr structures, respectively. The AC electrical properties were studied using a combination of electrochemical impedance spectroscopy and Mott–Schottky analysis, while the DC electrical properties were determined from current–voltage measurements. From the experimental results, an AC equivalent circuit model was proposed for the three different MIS Schottky barrier diodes under study. Additionally, the most significant electrical parameters were calculated. The results show a remarkable improvement in the performance of the MIS Schottky barrier diodes upon the addition of hybrid nanoPS layers with embedded Ag nanoparticles, opening the way to their use as photovoltaic devices.

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 271
Author(s):  
Rehab Ramadan ◽  
Raúl J. Martín-Palma

Hybrid nanostructures have a great potential to improve the overall properties of photonic devices. In the present study, silver nanoparticles (AgNPs) were infiltrated into nanostructured porous silicon (PSi) layers, aiming at enhancing the optoelectronic performance of Si-based devices. More specifically, Schottky diodes with three different configurations were fabricated, using Al/Si/Au as the basic structure. This structure was modified by adding PSi and PSi + AgNPs layers. Their characteristic electrical parameters were accurately determined by fitting the current–voltage curves to the non-ideal diode equation. Furthermore, electrochemical impedance spectroscopy was used to determine the electrical parameters of the diodes in a wide frequency range by fitting the Nyquist plots to the appropriate equivalent circuit model. The experimental results show a remarkable enhancement in electrical conduction after the incorporation of metallic nanoparticles. Moreover, the spectral photoresponse was examined for various devices. An approximately 10-fold increment in photoresponse was observed after the addition of Ag nanoparticles to the porous structures.


1998 ◽  
Vol 37 (Part 2, No. 1A/B) ◽  
pp. L10-L12 ◽  
Author(s):  
Stewart A. Goodman ◽  
F. Danie Auret ◽  
Prakash N. K. Deenapanray ◽  
Gerrit Myburg

2017 ◽  
Vol 28 (9) ◽  
pp. 6413-6420 ◽  
Author(s):  
Gülçin Ersöz ◽  
İbrahim Yücedağ ◽  
Sümeyye Bayrakdar ◽  
Şemsettin Altındal ◽  
Ahmet Gümüş

2009 ◽  
Vol 105 (12) ◽  
pp. 123704 ◽  
Author(s):  
Z.-Q. Fang ◽  
G. C. Farlow ◽  
B. Claflin ◽  
D. C. Look ◽  
D. S. Green

2016 ◽  
Vol 3 ◽  
pp. S159-S164 ◽  
Author(s):  
Alexander Polyakov ◽  
Nikolay Smirnov ◽  
Sergey Tarelkin ◽  
Anatoliy Govorkov ◽  
Vitaly Bormashov ◽  
...  

2014 ◽  
Vol 564 ◽  
pp. 367-374 ◽  
Author(s):  
A. Akkaya ◽  
T. Karaaslan ◽  
M. Dede ◽  
H. Çetin ◽  
E. Ayyıldız

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