Continuous-Time Programming of Floating-Gate Transistors for Nonvolatile Analog Memory Arrays

Floating-gate (FG) transistors are a primary means of providing nonvolatile digital memory in standard CMOS processes, but they are also key enablers for large-scale programmable analog systems, as well. Such programmable analog systems are often designed for battery-powered and resource-constrained applications, which require the memory cells to program quickly and with low infrastructural overhead. To meet these needs, we present a four-transistor analog floating-gate memory cell that offers both voltage and current outputs and has linear programming characteristics. Furthermore, we present a simple programming circuit that forces the memory cell to converge to targets with 13.0 bit resolution. Finally, we demonstrate how to use the FG memory cell and the programmer circuit in array configurations. We show how to program an array in either a serial or parallel fashion and demonstrate the effectiveness of the array programming with an application of a bandpass filter array.

Download Full-text

A CMOS programmable analog memory-cell array using floating-gate circuits

IEEE Transactions on Circuits and Systems II Analog and Digital Signal Processing ◽

10.1109/82.913181 ◽

2001 ◽

Vol 48 (1) ◽

pp. 4-11 ◽

Cited By ~ 75

Author(s):

R.R. Harrison ◽

J.A. Bragg ◽

P. Hasler ◽

B.A. Minch ◽

S.P. Deweerth

Keyword(s):

Memory Cell ◽

Floating Gate ◽

Cell Array ◽

Programmable Analog ◽

Analog Memory

Download Full-text

A floating-gate pFET based CMOS programmable analog memory cell array

2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353) ◽

10.1109/iscas.2000.856066 ◽

2002 ◽

Cited By ~ 1

Author(s):

J.A. Bragg ◽

R.R. Harrison ◽

P. Hasler ◽

S.P. DeWeerth

Keyword(s):

Memory Cell ◽

Floating Gate ◽

Cell Array ◽

Programmable Analog ◽

Analog Memory

Download Full-text

Single-Poly Floating-Gate Memory Cell Options for Analog Neural Networks

Solid-State Electronics ◽

10.1016/j.sse.2021.108062 ◽

2021 ◽

pp. 108062

Author(s):

Maksym Paliy ◽

Tommaso Rizzo ◽

Piero Ruiu ◽

Sebastiano Strangio ◽

Giuseppe Iannaccone

Keyword(s):

Neural Networks ◽

Memory Cell ◽

Floating Gate ◽

Floating Gate Memory ◽

Analog Neural Networks

Download Full-text

The Combined Effects of Cycling Endurance and TID on Floating Gate Memory Cells

Chinese Physics B ◽

10.1088/1674-1056/ac3d80 ◽

2021 ◽

Author(s):

Side Song ◽

Guozhu Liu ◽

Qi He ◽

Xiang Gu ◽

Genshen Hong ◽

...

Keyword(s):

Radiation Effects ◽

Memory Cell ◽

Floating Gate ◽

Combined Effects ◽

Memory Cells ◽

Threshold Voltage Shift ◽

Floating Gate Memory ◽

Interface Generation ◽

Radiation Hardened ◽

Radiation Induced

Abstract In this paper, the combined effects of cycling endurance and radiation on floating gate memory cell are investigated in detail, the results indicate that: 1.The programmed flash cells with a prior appropriate number of program and erase cycling stress exhibit much smaller threshold voltage shift than their counterpart in response to radiation, which is mainly ascribed to the recombination of trapped electrons (introduced by cycling stress) and trapped holes (introduced by irradiation) in the oxide surrounding the floating gate; 2.The radiation induced transconductance degradation in prior cycled flash cell is more severe than those without cycling stress in both of the programmed state and erased state; 3. Radiation is more likely to induce interface generation in programmed state than in erased state. This paper will be useful in understanding the issues involved in cycling endurance and radiation effects as well as in designing radiation hardened floating gate memory cells.

Download Full-text