Possible Evidence for Berezinskii–Kosterlitz–Thouless Transition in Ba(Fe0.914Co0.086)2As2 Crystals

In this study, we measure the in-plane transport properties of high-quality Ba(Fe0.914Co0.086)2As2 single crystals. Signatures of vortex unbinding Berezinskii–Kosterlitz–Thouless (BKT) transition are shown from both the conventional approach and the Fisher–Fisher–Huse dynamic scaling analysis, in which a characteristic Nelson–Kosterlitz jump is demonstrated. We also observe a non-Hall transverse signal exactly at the superconducting transition, which is explained in terms of guided motion of unbound vortices.

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A TECHNIQUE FOR THE GROWTH OF HIGH QUALITY SINGLE CRYSTALS OF ICE

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1987181 ◽

1987 ◽

Vol 48 (C1) ◽

pp. C1-595-C1-598 ◽

Cited By ~ 10

Author(s):

M. OHTOMO ◽

S. AHMAD ◽

R. W. WHITWORTH

Keyword(s):

Single Crystals ◽

High Quality

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Magnetic and transport properties of single crystals of Fe-based superconductors of 122 family

Uspekhi Fizicheskih Nauk ◽

10.3367/ufnr.0184.201408j.0897 ◽

2014 ◽

Vol 184 (8) ◽

pp. 897-902 ◽

Cited By ~ 1

Author(s):

Yurii F. Eltsev ◽

K.S. Pervakov ◽

V.A. Vlasenko ◽

S.Yu. Gavrilkin ◽

E.P. Khlybov ◽

...

Keyword(s):

Transport Properties ◽

Single Crystals

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Flux Method Growth of Large Size Group IV–V 2D GeP Single Crystals and Photoresponse Application

Crystals ◽

10.3390/cryst11030235 ◽

2021 ◽

Vol 11 (3) ◽

pp. 235

Author(s):

Shuqi Zhao ◽

Tongtong Yu ◽

Ziming Wang ◽

Shilei Wang ◽

Limei Wei ◽

...

Keyword(s):

Raman Spectroscopy ◽

Single Crystals ◽

High Performance ◽

Group Iv ◽

X Ray Diffraction ◽

High Quality ◽

Practical Applications ◽

Large Size ◽

Growth Method ◽

Polarized Raman

Two-dimensional (2D) materials driven by their unique electronic and optoelectronic properties have opened up possibilities for their various applications. The large and high-quality single crystals are essential to fabricate high-performance 2D devices for practical applications. Herein, IV-V 2D GeP single crystals with high-quality and large size of 20 × 15 × 5 mm3 were successfully grown by the Bi flux growth method. The crystalline quality of GeP was confirmed by high-resolution X-ray diffraction (HRXRD), Laue diffraction, electron probe microanalysis (EPMA) and Raman spectroscopy. Additionally, intrinsic anisotropic optical properties were investigated by angle-resolved polarized Raman spectroscopy (ARPRS) and transmission spectra in detail. Furthermore, we fabricated high-performance photodetectors based on GeP, presenting a relatively large photocurrent over 3 mA. More generally, our results will significantly contribute the GeP crystal to the wide optoelectronic applications.

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