A TECHNIQUE FOR THE GROWTH OF HIGH QUALITY SINGLE CRYSTALS OF ICE

1987 ◽  
Vol 48 (C1) ◽  
pp. C1-595-C1-598 ◽  
Author(s):  
M. OHTOMO ◽  
S. AHMAD ◽  
R. W. WHITWORTH
Keyword(s):  
Single Crystals ◽  
High Quality

scholarly journals Flux Method Growth of Large Size Group IV–V 2D GeP Single Crystals and Photoresponse Application

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 235
Author(s):  
Shuqi Zhao ◽  
Tongtong Yu ◽  
Ziming Wang ◽  
Shilei Wang ◽  
Limei Wei ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystals ◽  
High Performance ◽  
Group Iv ◽  
X Ray Diffraction ◽  
High Quality ◽  
Practical Applications ◽  
Large Size ◽  
Growth Method ◽  
Polarized Raman

Two-dimensional (2D) materials driven by their unique electronic and optoelectronic properties have opened up possibilities for their various applications. The large and high-quality single crystals are essential to fabricate high-performance 2D devices for practical applications. Herein, IV-V 2D GeP single crystals with high-quality and large size of 20 × 15 × 5 mm3 were successfully grown by the Bi flux growth method. The crystalline quality of GeP was confirmed by high-resolution X-ray diffraction (HRXRD), Laue diffraction, electron probe microanalysis (EPMA) and Raman spectroscopy. Additionally, intrinsic anisotropic optical properties were investigated by angle-resolved polarized Raman spectroscopy (ARPRS) and transmission spectra in detail. Furthermore, we fabricated high-performance photodetectors based on GeP, presenting a relatively large photocurrent over 3 mA. More generally, our results will significantly contribute the GeP crystal to the wide optoelectronic applications.

Growth from solution-melt in KCl and properties of high-quality low-Tc phase (2 2 0 1) single crystals

1994 ◽  
Vol 91 (8) ◽  
pp. 615-619 ◽  
Author(s):  
J.I. Gorina ◽  
G.A. Kaljushnaia ◽  
V.I. Ktitorov ◽  
V.P. Martovitsky ◽  
V.V. Rodin ◽  
...  
Keyword(s):  
Single Crystals ◽  
Phase 2 ◽  
High Quality ◽  
Growth From Solution

Photoluminescence studies of high-quality ZnO single crystals by hydrothermal method

2006 ◽  
Vol 376-377 ◽  
pp. 745-748 ◽  
Author(s):  
M. Yoneta ◽  
K. Yoshino ◽  
M. Ohishi ◽  
H. Saito
Keyword(s):  
Single Crystals ◽  
Hydrothermal Method ◽  
High Quality ◽  
Photoluminescence Studies

Thermal conductivity due to magnons in high-quality single crystals of the two-leg spin-ladder system (Ca,Sr,La)14Cu24O41

2013 ◽  
Vol 154 ◽  
pp. 60-63 ◽  
Author(s):  
K. Naruse ◽  
T. Kawamata ◽  
M. Ohno ◽  
Y. Matsuoka ◽  
K. Kumagai ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Single Crystals ◽  
Spin Ladder ◽  
High Quality ◽  
Ladder System

Growth of high-quality transparent SrB4O7 single crystals with high degradation resistance for DUV laser application

2018 ◽  
Vol 11 (12) ◽  
pp. 125501 ◽  
Author(s):  
Yasunori Tanaka ◽  
Keita Shikata ◽  
Ryota Murai ◽  
Yoshinori Takahashi ◽  
Masayuki Imanishi ◽  
...  
Keyword(s):  
Single Crystals ◽  
Laser Application ◽  
High Quality

Properties of high quality GaP single crystals grown by computer controlled liquid encapsulated Czochralski technique

1982 ◽  
Vol 41 (9) ◽  
pp. 841-843 ◽  
Author(s):  
Y. Kokubun ◽  
S. Washizuka ◽  
J. Ushizawa ◽  
M. Watanabe ◽  
T. Fukuda
Keyword(s):  
Single Crystals ◽  
Czochralski Technique ◽  
High Quality ◽  
Computer Controlled

Two-dimensional (PEA)2PbBr4 perovskite single crystals for a high performance UV-detector

2019 ◽  
Vol 7 (6) ◽  
pp. 1584-1591 ◽  
Author(s):  
Yunxia Zhang ◽  
Yucheng Liu ◽  
Zhuo Xu ◽  
Haochen Ye ◽  
Qingxian Li ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
High Performance ◽  
Two Dimensional ◽  
Uv Detector ◽  
High Quality ◽  
Photo Response ◽  
Response Performance

A centimeter-sized high-quality two-dimensional (PEA)2PbBr4 single crystal was prepared, which exhibited superior UV photo-response performance.

Floating zone growth of high-quality SrTiO3 single crystals

2003 ◽  
Vol 250 (3-4) ◽  
pp. 397-404 ◽  
Author(s):  
P.I. Nabokin ◽  
D. Souptel ◽  
A.M. Balbashov
Keyword(s):  
Single Crystals ◽  
Floating Zone ◽  
High Quality ◽  
Zone Growth

Growth and Characterization of Single Crystal Epitaxial CoGa on MBE Grown III-V Semiconductors

1988 ◽  
Vol 144 ◽  
Author(s):  
K. C. Garrison ◽  
C. J. Palmstrøm ◽  
R. A. Bartynski
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Single Crystals ◽  
Structural Quality ◽  
High Quality ◽  
Auger Analysis ◽  
Post Deposition

ABSTRACTWe have demonstrated growth of high quality single crystal CoGa films on Ga1−xAlxAs. These films were fabricated in-situ by codeposition of Co and Ga on MBE grown Ga1−xAlxAs(100) surfaces. The elemental composition of the films was determined using Rutherford Backscattering (RBS) and in-situ Auger analysis. The structural quality of the films' surfaces was studied using RHEED (during deposition) and LEED (post deposition). RBS channeling was used to determine the bulk crystalline quality of these films.For ∼500 Å CoGa films grown at ∼450°C substrate temperature, channeling data showed good quality epitaxial single crystals [χmin ∼7%] with minimal dechanneling at the interface.

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