scholarly journals Coherent Surface Plasmon Hole Burning via Spontaneously Generated Coherence

Molecules ◽  
2021 ◽  
Vol 26 (21) ◽  
pp. 6497
Author(s):  
Habibur Rahman ◽  
Hazrat Ali ◽  
Rafi Ud Din ◽  
Iftikhar Ahmad ◽  
Mahidur R. Sarker ◽  
...  

Surface plasmon (SP)—induced spectral hole burning (SHB) at the silver-dielectric interface is investigated theoretically. We notice a typical lamb dip at a selective frequency, which abruptly reduces the absorption spectrum of the surface plasmons polaritons (SPP). Introducing the spontaneous generated coherence (SGC) in the atomic medium, the slope of dispersion becomes normal. Additionally, slow SPP propagation is also noticed at the interface. The spectral hole burning dip is enhanced with the SGC effect and can be modified and controlled with the frequency and intensity of the driving fields. The SPP propagation length at the hole-burning region is greatly enhanced under the effect of SGC. A propagation length of the order of 600 µm is achieved for the modes, which is a remarkable result. The enhancement of plasmon hole burning under SGC will find significant applications in sensing technology, optical communication, optical tweezers and nano-photonics.

2016 ◽  
Vol 25 (8) ◽  
pp. 084205
Author(s):  
M S Abdul Jabar ◽  
Bakht Amin Bacha ◽  
Iftikhar Ahmad

2019 ◽  
Vol 94 (7) ◽  
pp. 075403 ◽  
Author(s):  
Roidar Khan ◽  
Muhammad Haneef ◽  
Maqsood Iqbal ◽  
Zakir Khan ◽  
B A Bacha ◽  
...  

2000 ◽  
Vol 84 (24) ◽  
pp. 5644-5647 ◽  
Author(s):  
F. Stietz ◽  
J. Bosbach ◽  
T. Wenzel ◽  
T. Vartanyan ◽  
A. Goldmann ◽  
...  

2003 ◽  
Vol 76 (8) ◽  
pp. 869-875 ◽  
Author(s):  
C. Hendrich ◽  
J. Bosbach ◽  
F. Stietz ◽  
F. Hubenthal ◽  
T. Vartanyan ◽  
...  

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  

1998 ◽  
Vol 512 ◽  
Author(s):  
C. Hecht ◽  
R. Kummer ◽  
A. Winnacker

ABSTRACTIn the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.


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