Equations for the Electron Density of the Two-Dimensional Electron Gas in Realistic AlGaN/GaN Heterostructures
Keyword(s):
This paper presents equations for the electron density of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures in three realistic scenarios: (1) AlGaN/GaN heterostructure with surface exposed to ambient with mobile ions, (2) metal gate deposited on the AlGaN surface, and (3) a thick dielectric passivation layer on the AlGaN surface. To derive the equations, we analyzed these scenarios by applying Gauss’s law. In contrast to the idealistic models, our analysis shows that the 2DEG charge density is proportional to the difference between spontaneous polarization of AlGaN and GaN, whereas surprisingly, it is independent of the piezoelectric polarization.
1989 ◽
Vol 72
(10)
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pp. 1033-1037
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Mobility of a two-dimensional electron gas in the AlGaN/GaN heterostructure: simulation and analysis
2019 ◽
Vol 1410
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pp. 012200
1986 ◽
Vol 33
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pp. 707-711
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2002 ◽
2014 ◽
Vol 1058
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pp. 132-135