scholarly journals Facile Functionalization of Poly(Dimethylsiloxane) Elastomer by Varying Content of Hydridosilyl Groups in a Crosslinker

Polymers ◽  
2019 ◽  
Vol 11 (11) ◽  
pp. 1842
Author(s):  
Seung Park ◽  
Bong Park ◽  
Mee Choi ◽  
Dong Kim ◽  
Jae Yoon ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Ethylene Glycol ◽  
Physical Properties ◽  
Divinyl Ether ◽  
Low Dielectric Constant ◽  
Simple Method ◽  
Low Dielectric ◽  
Initial Modulus ◽  
Pdms Elastomer ◽  
High Elasticity

Crosslinked poly(dimethylsiloxane) (PDMS) has been widely used as a dielectric elastomer for electrically driven actuators because it exhibits high elasticity, low initial modulus, and excellent moldability in spite of low dielectric constant. However, further improvement in the characteristics of the PDMS elastomer is not easy due to its chemical non-reactivity. Here, we report a simple method for functionalizing the elastomer by varying content of hydridosilyl groups in PDMS acted as a crosslinker. We synthesized poly(dimethylsiloxane-co-methylvinylsiloxane) (VPDMS) and poly(dimethylsiloxane-co-methylsiloxane) (HPDMS). Tri(ethylene glycol) divinyl ether (TEGDE) as a polar molecule was added to the mixture of VPDMS and HPDMS. TEGDE was reacted to the hydridosilyl group in HPDMS during crosslinking between VPDMS and HPDMS in the presence of platinum as a catalyst. Permittivity of the crosslinked film increased from ca. 25 to 36 pF/m at 10 kHz without a decline in other physical properties such as transparency and elasticity (T > 85%, E ~150 kPa, ɛ ~270%). It depends on the hydridosilyl group content of HPDMS. The chemical introduction of a new molecule into the hydridosilyl group in HPDMS during crosslinking would provide a facile, effective method of modifying the PDMS elastomers.

A Model for Comprehensive Studies of Porosity in Mesoporous Low-K Dielectrics

2002 ◽  
Vol 731 ◽  
Author(s):  
Mihail P. Petkov
Keyword(s):  
Dielectric Constant ◽  
Physical Properties ◽  
Percolation Threshold ◽  
Low Dielectric Constant ◽  
Site Percolation ◽  
Low Dielectric ◽  
Two Generations ◽  
Low K ◽  
Technology Trends ◽  
Porosity Fraction

AbstractThe successful integration of a porous low dielectric constant (k) material as an interlevel dielectric depends on the morphology of the embedded porosity. Simple site percolation models are utilized here to investigate porosity properties of low-kdielectrics with respect to the current technology trends. Significant differences between two generations of porous dielectrics,k< 2.4 andk< 2.1, are found. The porosity fraction in the latter is above the percolation threshold, which may have serious impact on the materials physical properties and its compatibility with production steps.

Comparison of Three Low Dielectric Constant Organic Polymers

1996 ◽  
Vol 443 ◽  
Author(s):  
C. B. Case ◽  
C. J. Case ◽  
A. Kornblit ◽  
M. E. Mills ◽  
D. Castillo ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Low Temperature ◽  
Physical Properties ◽  
Material Properties ◽  
Low Dielectric Constant ◽  
Organic Polymers ◽  
Low Dielectric ◽  
Multi Level

AbstractThree low dielectric constant organic polymers are being investigated for possible use in a conventional, subtractive etch, multi-level metal process with PVD Al plugs. Material properties, physical properties, planarization ability and etch chemistries are compared, as well as the possibility of using these materials in a low temperature PVD A1 plug process.

scholarly journals The Effects of MnO2 Addition on the Physical Properties of Pb(Ni1/3Nb2/3)O3-Pb(Zr,Ti)O3-Pb(Mg1/2W1/2)O3-BiFeO3 Ceramics

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 269
Author(s):  
Juhyun Yoo ◽  
Jonghyun Lee
Keyword(s):  
Dielectric Constant ◽  
Low Temperature ◽  
Physical Properties ◽  
Piezoelectric Properties ◽  
Piezoelectric Actuators ◽  
Low Dielectric Constant ◽  
Low Temperature Sintering ◽  
Device Application ◽  
Low Dielectric ◽  
Piezoelectric Devices

In this paper, for the application to multi-layer piezoelectric devices capable of being used in piezoelectric speakers, Pb(Ni1/3Nb2/3)O3-Pb(Zr,Ti)O3-BiFeO3 ceramics substituted with Pb(Mg1/2W1/2)O3 were manufactured according to MnO2 addition, and their physical properties were studied. At non-doped MnO2 added specimen, the maximum values of piezoelectric properties were shown, respectively: the εr of 2182, d33 of 513 pC/N, and kp of 0.634. When taking into consideration the low dielectric constant and high d33 in case of increasing the numbers of multilayer in ceramics, the x = 0.2 composition ceramics was suitable for the device application such as speaker using low-temperature sintering multilayer piezoelectric actuators.

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

Defect free monolayer and bilayer graphene exfoliated by solvent with low dielectric constant

2020 ◽  
Author(s):  
Vedanki ◽  
Chandrabhan Dohare ◽  
Pawan KumarSrivastava ◽  
Premlata Yadav ◽  
Subhasis Ghosh
Keyword(s):  
Dielectric Constant ◽  
Bilayer Graphene ◽  
Low Dielectric Constant ◽  
Low Dielectric
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