scholarly journals TiO2 thin films: Impact of substrate temperature on structural and morphological properties

2020 ◽  
Vol 1 (1) ◽  
pp. 24-29
Author(s):  
Suresh R ◽  
◽  
Subash S ◽  
Thirumal Valavan K ◽  
Justin Paul M ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Anatase Phase ◽  
Morphological Properties ◽  
Room Temperature Resistivity ◽  
Tio2 Thin Films ◽  
Nebulizer Spray Pyrolysis ◽  
Crystalline Nature ◽  
Lower Temperature ◽  
Nebulizer Spray

Smooth and white spherical shaped TiO2 thin films are successfully deposited by Nebulizer Spray Pyrolysis (NSP) technique. The TiO2 thin films are characterized by XRD, SEM, DRS, PL and I-V analysis. Anatase phase polycrystalline tetragonal structure with preferential orientation along (1 0 1) direction obtained form XRD. The expansion and contraction of Ti-O bonds leads to a high crystalline nature with its purity at 289 nm. The absorbance increases with substrate temperature due to the decrease of film thickness, packing density and shrinkage of spray droplets. TiO2 thin films indicate that the film is made up of small granules having slab like particles with some voids at lower temperature. The tiny particles are combined together to form white spherical shaped flower particles with pinholes at 450oC. A room temperature resistivity of the film deposited at 400oC is found to be in the order of 105 Ω/cm, which decreases to 103 Ω/cm for the films prepared at 450oC.

scholarly journals Effect of Substrate Temperature and Target-Substrate Distance on Growth of TiO2 Thin Films by Using DC- Reactive Sputtering Technique

2014 ◽  
Vol 17 (49) ◽  
Author(s):  
Laith Rabih ◽  
Sudjatmoko ◽  
Kuwat Triyana ◽  
Pekik Nurwantoro
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Tio2 Film ◽  
Anatase Phase ◽  
Optical And Electrical Properties ◽  
Tio2 Thin Films ◽  
Weight Percentage ◽  
Substrate Distance

Titanium oxide (TiO2) thin films have been deposited by a DC sputtering technique onto microscope glass slides. The effect of substrate temperature (Ts) and target-substrate distance (Dts) on some optical and electrical properties have been studied each individually. The structure of TiO2 thin films has been improved and became more crystalline when Ts has been increased (from 150 ºC to 250 ºC). The conductivity (ϭ), deposition rate (DR) and average values of grain size (G.S) have been increased with increasing Ts while the values of band gap (Eg) and weight percentage of the anatase phase (WA) have been decreased. The thickness of TiO2 film has been increased from 920 nm to 960 nm with increase Ts while it has been decreased from 960 nm to 680 nm with increase Dts (from 25mm to 35mm). As Dts has been increased, the conductivity ϭ, thickness (d) and average values of grain size have been decreased. The decreasing of conductivity at Dts=35 maybe attributes to increase the weight percentage of the rutile phase (WR). The XRD results show that the TiO2 structure phase has been varied. The results show that the optical and electrical properties of TiO2 film affected by changes the condition parameters especially Ts and Dts as well as the density and energy of the impinging atoms. The surface morphology and component of TiO2 thin films, resistance, optical transmittance and structure of film were characterized by SEM (EDX), I-V meter, UV-VIS spectrophotometer and XRD respectively.

scholarly journals Optimization and characterization of NiO thin films prepared via NSP technique and its P-N junction diode application

2019 ◽  
Vol 37 (3) ◽  
pp. 338-346 ◽  
Author(s):  
Joseph Saju ◽  
O.N. Balasundaram
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Xrd Analysis ◽  
Molar Concentration ◽  
Xrd Pattern ◽  
Morphological Variations ◽  
Nebulizer Spray Pyrolysis ◽  
Nebulizer Spray ◽  
Nio Films

AbstractThe present work reports on the optimization of substrate temperature, molar concentration and volume of the solution of nickel oxide (NiO) thin films prepared by nebulizer spray pyrolysis (NSP) technique. NiO films were optimized and characterized by XRD, SEM, EDX, UV-Vis and I-V measurements. Based on XRD analysis, the molar concentration, volume of solution and substrate temperature of the prepared NiO films were optimized as 0.20 M, 5 mL and 450 °C for P-N diode applications. The XRD pattern of the optimized NiO film revealed cubic structure. The surface morphological variations and elemental composition were confirmed by SEM and EDX analysis. The optical properties were studied with UV-Vis spectrophotometer and the minimum band gap value was 3.67 eV for 450 °C substrate temperature. Using J-V characteristics, the diode parameters: ideality factor n and barrier height Φb values of p-NiO/N-Si diode prepared at optimum conditions, i.e. 450 °C, 0.2 M, 5 mL, were evaluated in dark and under illumination.

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