Experimental studies and model analysis on potential fluctuation in InGaN quantum-well layers

2020 ◽  
Vol 59 (9) ◽  
pp. 091003
Author(s):  
Takashi Fujita ◽  
Shigeta Sakai ◽  
Yuma Ikeda ◽  
Atsushi A. Yamaguchi ◽  
Susumu Kusanagi ◽  
...  
2019 ◽  
Author(s):  
T. Fujita ◽  
S. Sakai ◽  
Y. Ikeda ◽  
A.A. Yamaguchi ◽  
Y. Kanitani ◽  
...  

1994 ◽  
Vol 08 (18) ◽  
pp. 1075-1096 ◽  
Author(s):  
W. E. MCMAHON ◽  
T. MILLER ◽  
T.-C. CHIANG

Noble-metal multilayer systems have been grown and examined with angle-resolved photoemission. Surface states, and single and double quantum wells have been studied experimentally; the results can be explained with a simple theoretical model based upon Bloch electrons. In this paper, we will present our model and then give a description of some experimental studies which utilize the model. In particular, we will consider double-quantum-well systems which can be used to examine basic aspects of electronic confinement, layer–layer coupling, and translayer interaction through a barrier.


2017 ◽  
Vol 205 ◽  
pp. 149-167 ◽  
Author(s):  
Xin Ding ◽  
B. Mack Kennedy ◽  
Sergi Molins ◽  
Timothy Kneafsey ◽  
William C. Evans

1998 ◽  
Vol 537 ◽  
Author(s):  
Takeshi Uenoyama

The compositional fluctuations of the In content were found in InGaN/GaN quantum wells and it caused the localized states by the potential fluctuation. We have evaluated the optical gain of GaN based quantum well structures with localized states. The localized states are treated as the subband states of the quantum disk-like dots in the well. It was found that the inhomogeneous broadening played an important role in the optical gain and that it should be reduced to use the benefit of the localized states for laser oscillations.


2006 ◽  
Vol 765 (3-4) ◽  
pp. 390-400 ◽  
Author(s):  
Z. Yasin ◽  
M.I. Shahzad ◽  
I.E. Qureshi ◽  
G. Sher ◽  
R.J. Peterson

2001 ◽  
Vol 487 (1-3) ◽  
pp. 135-145 ◽  
Author(s):  
A.M. Shikin ◽  
D.V. Vyalikh ◽  
G.V. Prudnikova ◽  
V.K. Adamchuk

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