Determination of the leakage current transport mechanisms in quasi-vertical GaN–on–Si Schottky barrier diodes (SBDs) at low and high reverse biases and varied temperatures

2021 ◽  
Vol 14 (10) ◽  
pp. 104002
Author(s):  
Jiabo Chen ◽  
Zhihong Liu ◽  
Haiyong Wang ◽  
Xiufeng Song ◽  
Zhaoke Bian ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Current Transport ◽  
Schottky Barrier Diodes ◽  
Transport Mechanisms ◽  
Gan On Si

scholarly journals Current transport mechanisms and trap state investigations in (Ni/Au)–AlN/GaN Schottky barrier diodes

2011 ◽  
Vol 51 (3) ◽  
pp. 576-580 ◽  
Author(s):  
Engin Arslan ◽  
Serkan Bütün ◽  
Yasemin Şafak ◽  
Hüseyin Çakmak ◽  
Hongbo Yu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Current Transport ◽  
Schottky Barrier Diodes ◽  
Transport Mechanisms ◽  
Trap State

Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination

2021 ◽  
Vol 118 (24) ◽  
pp. 243501
Author(s):  
Xiaolu Guo ◽  
Yaozong Zhong ◽  
Xin Chen ◽  
Yu Zhou ◽  
Shuai Su ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Gan On Si
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