scholarly journals 2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

2018 ◽  
Vol 112 (5) ◽  
pp. 052101 ◽  
Author(s):  
Jun Ma ◽  
Elison Matioli
2021 ◽  
Vol 15 (1) ◽  
pp. 016501
Author(s):  
Fumio Otsuka ◽  
Hironobu Miyamoto ◽  
Akio Takatsuka ◽  
Shinji Kunori ◽  
Kohei Sasaki ◽  
...  

Abstract We fabricated high forward and low leakage current trench MOS-type Schottky barrier diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown by halide vapor phase epitaxy on β-Ga2O3 (001) substrate. The MOSSBDs, measuring 1.7 × 1.7 mm2, exhibited a forward current of 2 A (70 A cm−2) at 2 V forward voltage and a leakage current of 5.7 × 10–10 A at −1.2 kV reverse voltage (on/off current ratio of > 109) with an ideality factor of 1.05 and wafer-level specific on-resistance of 17.1 mΩ · cm2.


2018 ◽  
Vol 113 (20) ◽  
pp. 202101 ◽  
Author(s):  
Wenshen Li ◽  
Zongyang Hu ◽  
Kazuki Nomoto ◽  
Zexuan Zhang ◽  
Jui-Yuan Hsu ◽  
...  

2012 ◽  
Vol 725 ◽  
pp. 53-56 ◽  
Author(s):  
Kenichi Ohtsuka ◽  
T. Nakatani ◽  
A. Nagae ◽  
H. Watanabe ◽  
Y. Nakaki ◽  
...  

SiC Schottky barrier diodes were fabricated and measured properties were characterized by device simulation. Most of devices show low leakage current, however, a few devices show leakage current larger than the values estimated from deviation of drift layer parameters. The leakage current component remarkable in lower voltage and saturating at higher voltage is related to Schottky barrier tunneling at macroscopic defects. The component remarkable in higher voltage is considered to be due to microscopic defect related generation current, concerning with non-stoichiometry.


2015 ◽  
Vol 54 (7) ◽  
pp. 070302 ◽  
Author(s):  
Hyun-Gyu Jang ◽  
Jeho Na ◽  
Jung-Jin Kim ◽  
Young-Rak Park ◽  
Hyun-Soo Lee ◽  
...  

2021 ◽  
Vol 119 (26) ◽  
pp. 263508
Author(s):  
Luca Nela ◽  
Catherine Erine ◽  
Elison Matioli

Author(s):  
H. Kozaka ◽  
M. Takata ◽  
S. Murakami ◽  
T. Yatsuo

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