scholarly journals Development of High-Sensitivity Pressure Sensor with On-chip Differential Transistor Amplifier

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Experimental Data ◽  
Mathematical Model ◽  
Pressure Sensor ◽  
Feedback Loop ◽  
Operating Temperature ◽  
High Sensitivity ◽  
Electrical Circuit ◽  
Negative Feedback Loop ◽  
On Chip ◽  
Operating Temperature Range

<p>A mathematical model of a high-sensitivity pressure sensor with a novel electrical circuit utilizing piezosensitive transistor differential amplifier with negative feedback loop (PDA-NFL) is presented. Circuits utilizing differential transistor amplifiers based on vertical n-p-n and lateral p-n-p transistors are analyzed and optimized for sensitivity to pressure and stability of output signal in operating temperature range. Parameters of fabrication process necessary for modeling of I-V characteristics of transistors are discussed. The results of the model are sufficiently close to the experimental data.</p><br>

scholarly journals Development of High-Sensitivity Pressure Sensor with On-chip Differential Transistor Amplifier

2021 ◽  
Author(s):  
Mikhail
Keyword(s):  
Experimental Data ◽  
Mathematical Model ◽  
Pressure Sensor ◽  
Feedback Loop ◽  
Operating Temperature ◽  
High Sensitivity ◽  
Electrical Circuit ◽  
Negative Feedback Loop ◽  
On Chip ◽  
Operating Temperature Range

A mathematical model of a high-sensitivity pressure sensor with a novel electrical circuit utilizing a piezosensitive transistor differential amplifier with negative feedback loop is presented. Circuits utilizing differential transistor amplifiers based on vertical n-p-n and lateral p-n-p transistors are analyzed and optimized for sensitivity to pressure and stability of output signal in operating temperature range. Parameters of fabrication process necessary for modeling of I–V characteristics of transistors are discussed. The results of the model are sufficiently close to the experimental data.

scholarly journals Development of High-Sensitivity Pressure Sensor with On-chip Differential Transistor Amplifier

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Experimental Data ◽  
Mathematical Model ◽  
Pressure Sensor ◽  
Feedback Loop ◽  
Operating Temperature ◽  
High Sensitivity ◽  
Electrical Circuit ◽  
Negative Feedback Loop ◽  
On Chip ◽  
Operating Temperature Range

<p>A mathematical model of a high-sensitivity pressure sensor with a novel electrical circuit utilizing piezosensitive transistor differential amplifier with negative feedback loop (PDA-NFL) is presented. Circuits utilizing differential transistor amplifiers based on vertical n-p-n and lateral p-n-p transistors are analyzed and optimized for sensitivity to pressure and stability of output signal in operating temperature range. Parameters of fabrication process necessary for modeling of I-V characteristics of transistors are discussed. The results of the model are sufficiently close to the experimental data.</p><br>

scholarly journals Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for -1…+1 kPa

2021 ◽  
Author(s):  
Mikhail
Keyword(s):  
Circuit Design ◽  
Pressure Sensor ◽  
Feedback Loop ◽  
High Sensitivity ◽  
Electrical Circuit ◽  
Bipolar Junction Transistors ◽  
Chip Area ◽  
Bipolar Junction Transistor ◽  
Junction Transistor ◽  
Type V

The theoretical model and experimental characteristics of ultra-high sensitivity MEMS pressure sensor chip for 1 kPa utilizing a novel electrical circuit are presented. The electrical circuit uses piezosensitive differential amplifier with negative feedback loop (PDA-NFL) based on two bipolar-junction transistors (BJT). The BJT has a vertical structure of n-p-n type (V-NPN) formed on a non-deformable chip area. The circuit contains eight piezoresistors located on a profiled membrane in the areas of maximum mechanical stresses. The circuit design provides a balance between high pressure sensitivity (S =44.9 mV/V/kPa) and fairly low temperature coefficient of zero signal (TCZ = 0.094% FS/°C). Additionally, high membrane burst pressure of P = 550 kPa was reached.

scholarly journals Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for -1…+1 kPa

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Circuit Design ◽  
Pressure Sensor ◽  
Feedback Loop ◽  
High Sensitivity ◽  
Electrical Circuit ◽  
Bipolar Junction Transistors ◽  
Chip Area ◽  
Bipolar Junction Transistor ◽  
Junction Transistor ◽  
Type V

The theoretical model and experimental characteristics of ultra-high sensitivity MEMS pressure sensor chip for the range of -1...+1 kPa utilizing a novel electrical circuit are presented. The electrical circuit uses piezosensitive differential amplifier with negative feedback loop (PDA-NFL) based on two bipolar-junction transistors (BJT). The BJT has a vertical structure of n-p-n type (V-NPN) formed on a non-deformable chip area. The circuit contains eight piezoresistors located on a profiled membrane in the areas of maximum mechanical stresses. The circuit design provides a balance between high pressure sensitivity (S = 44.9 mV/V/kPa) and fairly low temperature dependence of zero output signal (TCZ = 0.094% FS/°C). Additionally, high membrane burst pressure of P = 550 kPa was reached.

scholarly journals High-Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor with Temperature Compensation

2021 ◽  
Author(s):  
Mikhail
Keyword(s):  
Negative Feedback ◽  
Pressure Sensor ◽  
Feedback Loop ◽  
Pressure Overload ◽  
Electrical Circuit ◽  
Negative Feedback Loop ◽  
Pressure Sensitivity ◽  
Bipolar Junction Transistor ◽  
Chip Size ◽  
Junction Transistor

The paper presents MEMS pressure sensor chip utilizing novel electrical circuit with bipolar-junction transistor-based (BJT) differential amplifier with negative feedback loop (PDA-NFL). Pressure sensor chips with two circuits have been manufactured and tested: the first chip uses circuit with vertical n-p-n (V-NPN) BJTs and the second – circuit with horizontal p-n-p (L-PNP) BJTs. The demonstrated approach allows for increase of pressure sensitivity while keeping the same chip size. It also can be used for chip size reduction and increase of pressure overload capability while maintaining the same pressure sensitivity. Significant reduction of both noise and temperature instability of output signal has been demonstrated using transistor amplifier with negative feedback loop.

scholarly journals High Sensitive, Linear and Thermostable Pressure Sensor Utilizing Bipolar Junction Transistor for 5 kPa

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Pressure Sensor ◽  
Feedback Loop ◽  
Electric Circuit ◽  
Electrical Circuit ◽  
Sensor Chip ◽  
Burst Pressure ◽  
Negative Feedback Loop ◽  
Chip Area ◽  
Bipolar Junction Transistor ◽  
Junction Transistor

Research of pressure sensor chip utilizing novel electrical circuit with bipolar-junction transistor-based (BJT) piezosensitive differential amplifier with negative feedback loop (PDA-NFL) for 5 kPa differential range was done. The significant advantages of developed chip PDA-NFL in the comparative analysis of advanced pressure sensor analogs, which are using the Wheatstone piezoresistive bridge, are clearly shown. The experimental results prove that pressure sensor chip PDA-NFL with 4.0x4.0 mm<sup>2</sup> chip area has sensitivity S = 11.2 ± 1.8 mV/V/kPa with nonlinearity of 2K<sub>NLback</sub> = 0.11 ± 0.09 %/FS (pressure is applied from the back chip side) and 2K<sub>NLtop</sub> = 0.18 ± 0.09 %/FS (pressure is applied from the top chip side). All temperature characteristics have low errors, because the precision elements balance of PDA-NFL electric circuit was used. Additionally, the burst pressure is 80 times higher than the working range.

scholarly journals High-Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor with Temperature Compensation

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Negative Feedback ◽  
Pressure Sensor ◽  
Feedback Loop ◽  
Pressure Overload ◽  
Electrical Circuit ◽  
Negative Feedback Loop ◽  
Pressure Sensitivity ◽  
Bipolar Junction Transistor ◽  
Chip Size ◽  
Junction Transistor

The paper presents MEMS pressure sensor chip utilizing novel electrical circuit with bipolar-junction transistor-based (BJT) differential amplifier with negative feedback loop (PDA-NFL). Pressure sensor chips with two circuits have been manufactured and tested: the first chip uses circuit with vertical n-p-n (V-NPN) BJTs and the second – circuit with horizontal p-n-p (L-PNP) BJTs. The demonstrated approach allows for increase of pressure sensitivity while keeping the same chip size. It also can be used for chip size reduction and increase of pressure overload capability while maintaining the same pressure sensitivity. Significant reduction of both noise and temperature instability of output signal has been demonstrated using transistor amplifier with negative feedback loop.

scholarly journals Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for -1…+1 kPa

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Circuit Design ◽  
Pressure Sensor ◽  
Feedback Loop ◽  
High Sensitivity ◽  
Electrical Circuit ◽  
Bipolar Junction Transistors ◽  
Chip Area ◽  
Bipolar Junction Transistor ◽  
Junction Transistor ◽  
Type V

The theoretical model and experimental characteristics of ultra-high sensitivity MEMS pressure sensor chip for the range of -1...+1 kPa utilizing a novel electrical circuit are presented. The electrical circuit uses piezosensitive differential amplifier with negative feedback loop (PDA-NFL) based on two bipolar-junction transistors (BJT). The BJT has a vertical structure of n-p-n type (V-NPN) formed on a non-deformable chip area. The circuit contains eight piezoresistors located on a profiled membrane in the areas of maximum mechanical stresses. The circuit design provides a balance between high pressure sensitivity (S = 44.9 mV/V/kPa) and fairly low temperature dependence of zero output signal (TCZ = 0.094% FS/°C). Additionally, high membrane burst pressure of P = 550 kPa was reached.

scholarly journals Pressure sensor chip utilizing electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) for 5 kPa

2021 ◽  
Author(s):  
Mikhail
Keyword(s):  
Negative Feedback ◽  
Pressure Sensor ◽  
Feedback Loop ◽  
Microelectromechanical Systems ◽  
Pressure Sensors ◽  
Electrical Circuit ◽  
Differential Amplifier ◽  
Sensor Chip ◽  
Negative Feedback Loop ◽  
Nonlinearity Error

High sensitive (S = 11.2 ± 1.8 mV/V/kPa with nonlinearity error 2KNL = 0.15 ± 0.09%/FS) small-sized (4.00x4.00 mm2) silicon pressure sensor chip utilizing new electrical circuit for microelectromechanical systems (MEMS) in the form of differential amplifier with negative feedback loop (PDA-NFL) for 5 kPa differential was developed. The advantages are demonstrated in the array of output characteristics, which prove the relevance of the presented development, relative to modern developments of pressure sensors with Wheatstone bridge electrical circuit for 5 kPa range.

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