Photon-assisted Fano resonance tunneling periodic double-well Potential characteristics

2021 ◽  
Vol 0 (0) ◽  
pp. 1-8
Author(s):  
ZHANG Yong-tang ◽  
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1986 ◽  
Vol 47 (5) ◽  
pp. 757-766 ◽  
Author(s):  
C. Aslangul ◽  
N. Pottier ◽  
D. Saint-James

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.


Author(s):  
Zilvinas Kancleris ◽  
Gediminas Slekas ◽  
Andrius Kamarauskas ◽  
Dalius Seliuta
Keyword(s):  

2015 ◽  
Vol 21 (3) ◽  
pp. NP64-NP65 ◽  
Author(s):  
Shu-Cherng Fang ◽  
David Yang Gao ◽  
Gang-Xuan Lin ◽  
Ruey-Lin Sheu ◽  
Wen-Xun Xing

2014 ◽  
Vol 706 ◽  
pp. 25-34 ◽  
Author(s):  
G. Füsun Alişverişçi ◽  
Hüseyin Bayiroğlu ◽  
José Manoel Balthazar ◽  
Jorge Luiz Palacios Felix

In this paper, we analyzed chaotic dynamics of an electromechanical damped Duffing oscillator coupled to a rotor. The electromechanical damped device or electromechanical vibration absorber consists of an electrical system coupled magnetically to a mechanical structure (represented by the Duffing oscillator), and that works by transferring the vibration energy of the mechanical system to the electrical system. A Duffing oscillator with double-well potential is considered. Numerical simulations results are presented to demonstrate the effectiveness of the electromechanical vibration absorber. Lyapunov exponents are numerically calculated to prove the occurrence of a chaotic vibration in the non-ideal system and the suppressing of chaotic vibration in the system using the electromechanical damped device.


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