scholarly journals Effect of RF Power on Structural and Electrical Properties of Ga-Doped ZnO for Transparent Electrode of Thin Film Solar Cells

2011 ◽  
Vol 21 (4) ◽  
pp. 202-206 ◽  
Author(s):  
Chang-Sik Son
2011 ◽  
Vol 14 (11) ◽  
pp. B124 ◽  
Author(s):  
Jae-Min Lee ◽  
Sun Jin Yun ◽  
Jun Kwan Kim ◽  
Jung Wook Lim

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Fang-Hsing Wang ◽  
Shang-Chao Hung ◽  
Cheng-Fu Yang ◽  
Yen-Hsien Lee

1.5 wt% zinc fluoride (ZnF2) was mixed with zinc oxide powder to form the F-doped ZnO (FZO) composition. At first, the FZO thin films were deposited at room temperature and5×10-3Torr in pure Ar under different deposition power. Hall measurements of the as-deposited FZO thin films were investigated, and then the electrical properties were used to find the deposition power causing the FZO thin films with minimum resistance. The FZO thin films with minimum resistance were further treated by H2plasma and then found their variations in the electrical properties by Hall measurements. Hydrochloric (HCl) acid solutions with different concentrations (0.1%, 0.2%, and 0.5%) were used to etch the surfaces of the FZO thin films. Finally, the as-deposited, HCl-etched as-deposited, and HCl-etched H2-plasma-treated FZO thin films were used as transparent electrodes to fabricate the p-i-nα-Si:H thin film solar cells and their characteristics were compared in this study. We would show that using H2-plasma-treated and HCl-etched FZO thin films as transparent electrodes would improve the efficiency of the fabricated thin film solar cells.


2009 ◽  
Vol 2 (1) ◽  
pp. 110-112 ◽  
Author(s):  
Sheeja Krishnan ◽  
Ganesh Sanjeev ◽  
Manjunatha Pattabi ◽  
X. Mathew

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