Effect of Si Doping in Self-Assembled InAs Quantum Dots on Infrared Photodetector Properties

2019 ◽  
Vol 29 (9) ◽  
pp. 542-546
Author(s):  
Dong-Bum Seo ◽  
◽  
Je-hwan Hwang ◽  
Boram Oh ◽  
Jun Oh Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Infrared Photodetector ◽  
Inas Quantum Dots ◽  
Si Doping ◽  
Self Assembled

Mid-Infrared Photodetector Using Self-Assembled InAs Quantum Dots Embedded in Modulation-Doped GaAs Quantum Wells

1999 ◽  
Vol 607 ◽  
Author(s):  
Seung-Woong Lee ◽  
Kazuhiko Hirakawa ◽  
Yozo Shimada
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
High Mobility ◽  
Normal Incidence ◽  
Infrared Photodetector ◽  
Inas Quantum Dots ◽  
Operation Temperature ◽  
Long Lifetime ◽  
Quantum Dot Infrared Photodetector ◽  
Self Assembled

AbstractWe have designed and fabricated a quantum dot infrared photodetector which utilizes lateral transport of photoexcited carriers in the modulation-doped A1GaAs/GaAs two-dimensional (2D) channels. A broad photocurrent signal has been observed in the photon energy range of 100–300 meV due to bound-to-continuum intersubband absorption of normal incidence radiation in the self-assembled InAs quantum dots. A peak responsivity was as high as 2.3 A/W. The high responsivity is realized mainly by a high mobility and a long lifetime of photoexcited carriers in the modulation-doped 2D channels. Furthermore, we found that this device has high operation temperature and very high photoconductive gain.

Magnetotunneling spectroscopy imaging of electron wave functions in self-assembled InAs quantum dots

2001 ◽  
Vol 171 (12) ◽  
pp. 1365
Author(s):  
E.E. Vdovin ◽  
Yu.N. Khanin ◽  
Yu.V. Dubrovskii ◽  
A. Veretennikov ◽  
A. Levin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Wave Functions ◽  
Electron Wave ◽  
Inas Quantum Dots ◽  
Self Assembled

Photocurrent spectroscopy on self-assembled InAs quantum dots embedded in InP

2005 ◽  
Vol 36 (3-6) ◽  
pp. 227-230 ◽  
Author(s):  
H. Pettersson ◽  
L. Landin ◽  
Ying Fu ◽  
M. Kleverman ◽  
M. Borgström ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Inas Quantum Dots ◽  
Photocurrent Spectroscopy ◽  
Self Assembled

Size distribution effects on self-assembled InAs quantum dots

2007 ◽  
Vol 18 (S1) ◽  
pp. 191-194 ◽  
Author(s):  
S. I. Jung ◽  
H. Y. Yeo ◽  
I. Yun ◽  
J. Y. Leem ◽  
I. K. Han ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Size Distribution ◽  
Inas Quantum Dots ◽  
Self Assembled

The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

2006 ◽  
Vol 17 (23) ◽  
pp. 5722-5725 ◽  
Author(s):  
G W Shu ◽  
C K Wang ◽  
J S Wang ◽  
J L Shen ◽  
R S Hsiao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Decay Time ◽  
Inas Quantum Dots ◽  
Photoluminescence Decay ◽  
Self Assembled

Photoluminescence of Excitons in Differently Oriented Self-Assembled InAs Quantum Dots

1997 ◽  
Vol 164 (1) ◽  
pp. 455-457 ◽  
Author(s):  
Yu.A. Pusep ◽  
S. W. da silva ◽  
J. C. Galzerani ◽  
D. I. Lubyshev ◽  
P. P. Gonzalez-Borrero ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Inas Quantum Dots ◽  
Self Assembled
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