Mid-Infrared Photodetector Using Self-Assembled InAs Quantum Dots Embedded in Modulation-Doped GaAs Quantum Wells
Keyword(s):
AbstractWe have designed and fabricated a quantum dot infrared photodetector which utilizes lateral transport of photoexcited carriers in the modulation-doped A1GaAs/GaAs two-dimensional (2D) channels. A broad photocurrent signal has been observed in the photon energy range of 100–300 meV due to bound-to-continuum intersubband absorption of normal incidence radiation in the self-assembled InAs quantum dots. A peak responsivity was as high as 2.3 A/W. The high responsivity is realized mainly by a high mobility and a long lifetime of photoexcited carriers in the modulation-doped 2D channels. Furthermore, we found that this device has high operation temperature and very high photoconductive gain.
Keyword(s):
2005 ◽
Vol 277-279
◽
pp. 1023-1028
2001 ◽
Vol 227-228
◽
pp. 1162-1165
◽
1999 ◽
Vol 38
(Part 1, No. 4B)
◽
pp. 2559-2561
◽
Keyword(s):
2006 ◽
Keyword(s):
2005 ◽
Vol 36
(3-6)
◽
pp. 227-230
◽
Keyword(s):