Effects of Annealing Time on the Structure and Optical Properties of Aluminum-Doped Zinc Oxide Thin Films

2015 ◽  
Vol 35 (s1) ◽  
pp. s131001
Author(s):  
侯海虹 Hou Haihong ◽  
张涛 Zhang Tao ◽  
王斌 Wang Bin ◽  
刘璐 Liu Lu
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Annealing Time ◽  
Oxide Thin Films ◽  
Aluminum Doped Zinc Oxide

Electrical and Optical Properties of Zinc Oxide Thin Films and Heavily Aluminum-doped Zinc Oxide Thin Films Prepared by Molecular Beam Epitaxy

2002 ◽  
Vol 744 ◽  
Author(s):  
Takeshi Ohgaki ◽  
Yuji Kawamura ◽  
Naoki Ohashi ◽  
Hirofumi Kakemoto ◽  
Satoshi Wada ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Band Edge Emission ◽  
Oxide Thin Films ◽  
Good Crystallinity ◽  
Aluminum Doped Zinc Oxide ◽  
High Carrier

ABSTRACTZnO (ZO) and Aluminum (Al) doped ZnO (AZO) films were grown on sapphire substrate via oxygen radical assisted molecular beam epitaxy (MBE) technique. The results of XRD measurement and temperature dependent Hall measurement confirmed that the AZO films were typically highly degenerate semiconductor with good crystallinity. The resistivity of these films were closed to the theoretical lower limit. The optical properties of these films were investigated by photoluminescence (PL) spectra and absorption spectra. Strong band-edge emission was observed in the AZO films with good crystallinity in spite of high carrier concentration more than 1020 cm-3. A sift of absorption edge to higher energy side and a gradual increase of the absorption was observed for the AZO film.

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