Semiconductor Film Passively Q-Switching for Dual-Wavelength Lasers at 1064 nm and 1342 nm in Nd:YVO4Laser

2012 ◽  
Vol 39 (2) ◽  
pp. 0202008
Author(s):  
王加贤 Wang Jiaxian ◽  
王燕飞 Wang Yanfei
Keyword(s):  
Dual Wavelength ◽  
Semiconductor Film ◽  
Q Switching

Graphene Passively Q-Switching for Dual-Wavelength Lasers at 1064 nm and 1342 nm in Nd:YVO4laser

2014 ◽  
Vol 41 (4) ◽  
pp. 0402009 ◽  
Author(s):  
梁莉 Liang Li ◽  
林正怀 Lin Zhenghuai ◽  
陈狮 Chen Shi ◽  
王加贤 Wang Jiaxian
Keyword(s):  
Dual Wavelength ◽  
Q Switching

scholarly journals Low-Gain Oscillations and MoS2-Based Dual-Wavelength Passive Q-Switching of Diode-Pumped Nd:YAG Lasers on 4F3/2→4I13/2 Transition

2017 ◽  
Vol 9 (6) ◽  
pp. 1-8
Author(s):  
Haifeng Lin ◽  
Hongyi Zhang ◽  
Wenzhang Zhu ◽  
Feibing Xiong ◽  
Jianjian Ruan
Keyword(s):  
Dual Wavelength ◽  
Nd:Yag Lasers ◽  
Q Switching ◽  
Diode Pumped

Self-Q-switching and passively Q-switched mode-locking of dual-wavelength Nd:YSAG laser

2020 ◽  
Vol 122 ◽  
pp. 105860 ◽  
Author(s):  
Congcong Gao ◽  
Shuhui Lv ◽  
Guo Zhu ◽  
Guoju Wang ◽  
Xiancui Su ◽  
...  
Keyword(s):  
Mode Locking ◽  
Dual Wavelength ◽  
Q Switching

Orthogonally polarized dual-wavelength cryogenic Nd:YLF laser and the investigation to the passive Q-switching

2016 ◽  
Author(s):  
C. Y. Cho ◽  
H. P. Cheng ◽  
T. L. Huang ◽  
K. W. Su ◽  
K. F. Huang ◽  
...  
Keyword(s):  
Dual Wavelength ◽  
Q Switching

Dual-wavelength Bi2Se3-based passively Q-switching Nd3+-doped glass all-fiber laser

2018 ◽  
Vol 16 (2) ◽  
pp. 020016 ◽  
Author(s):  
Xiaofeng Rong Xiaofeng Rong ◽  
Saiyu Luo Saiyu Luo ◽  
Wensong Li Wensong Li ◽  
Shuisen Jiang Shuisen Jiang ◽  
Xigun Yan Xigun Yan ◽  
...  
Keyword(s):  
Fiber Laser ◽  
Dual Wavelength ◽  
Q Switching ◽  
Doped Glass

Multiple phase transitions investigated by high-speed TEM

1990 ◽  
Vol 48 (4) ◽  
pp. 550-551
Author(s):  
Oleg Bostanjoglo ◽  
Peter Thomsen-Schmidt
Keyword(s):  
Phase Transitions ◽  
High Speed ◽  
Short Exposure ◽  
Semiconductor Film ◽  
Time Resolved ◽  
Short Exposure Time ◽  
Multiple Phase ◽  
Model Substance ◽  
History Of ◽  
Electron Image

Thin GexTe1-x (x = 0.15-0.8) were studied as a model substance of a composite semiconductor film, in addition being of interest for optical storage material. Two complementary modes of time-resolved TEM were used to trace the phase transitions, induced by an attached Q-switched (50 ns FWHM) and frequency doubled (532 nm) Nd:YAG laser. The laser radiation was focused onto the specimen within the TEM to a 20 μm spot (FWHM). Discrete intermediate states were visualized by short-exposure time doubleframe imaging /1,2/. The full history of a transformation was gained by tracking the electron image intensity with photomultiplier and storage oscilloscopes (space/time resolution 100 nm/3 ns) /3/. In order to avoid radiation damage by the probing electron beam to detector and specimen, the beam is pulsed in this continuous mode of time-resolved TEM,too.Short events ( <2 μs) are followed by illuminating with an extended single electron pulse (fig. 1c)

FIRST OBSERVATION OF DETERMINISTIC CHAOS IN PASSIVE Q-SWITCHING PULSATION

1988 ◽  
Vol 49 (C2) ◽  
pp. C2-413-C2-416
Author(s):  
M. TACHIKAWA ◽  
K. TANII ◽  
F.-L. HONG ◽  
T. TOHEI ◽  
M. KAJITA ◽  
...  
Keyword(s):  
Deterministic Chaos ◽  
Q Switching
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