A Novel Approach to Sensitivity Study in Monte Carlo Simulation

AbstractA Monte Carlo simulation in a novel approach is used for studying the problem of the outbreak and spread dynamics of the new COVID-19 pandemic in this work. In particular, our goal was to generate epidemiological data based on natural mechanism of transmission of this disease assuming random interactions of a large-finite number of individuals in very short distance ranges. In the simulation we also take into account the stochastic character of the individuals in a finite population and given densities of people. On the other hand, we include in the simulation the appropriate statistical distributions for the parameters characterizing this disease. An important outcome of our work, besides the generated epidemic curves, is the methodology of determining of the effective reproductive number during the main part of the new daily cases of the epidemic. Since this quantity constitutes a fundamental parameter of the SIR-based epidemic models, we also studied how it is affected by small variations of the incubation time and the crucial distance distributions, and furthermore, by the degree of quarantine measures. In addition, we compare our qualitative results with those of selected real epidemiological data.

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Monte- Carlo Simulation Of A New 3D TOF-PET Camera: A Sensitivity Study

1993 IEEE Conference Record Nuclear Science Symposium and Medical Imaging Conference ◽

10.1109/nssmic.1993.701865 ◽

2005 ◽

Author(s):

E. Paraf ◽

A. Bouvier ◽

J. Vacher

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Sensitivity Study ◽

Tof Pet

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Sensitivity Study of Staircase Fatigue Tests Using Monte Carlo Simulation

10.4271/2005-01-0803 ◽

2005 ◽

Cited By ~ 6

Author(s):

Jiangtao Song ◽

Zissimos P. Mourelatos ◽

Randy J. Gu ◽

Paul N. Crepeau

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Sensitivity Study ◽

Fatigue Tests

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Electron Scattering in Solids

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100133618 ◽

1990 ◽

Vol 48 (2) ◽

pp. 4-5

Author(s):

Ryuichi Shimizu ◽

Ze-Jun Ding

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Angular Distribution ◽

Elastic Scattering ◽

Electron Scattering ◽

Cross Sections ◽

Expansion Method ◽

Electron Excitation ◽

Partial Wave Expansion ◽

Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

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Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100134922 ◽

1990 ◽

Vol 48 (2) ◽

pp. 264-265

Author(s):

D. R. Liu ◽

S. S. Shinozaki ◽

R. J. Baird

Keyword(s):

Thin Film ◽

Thin Films ◽

Monte Carlo Simulation ◽

Monte Carlo ◽

Compound Semiconductors ◽

Energy Dispersive Analysis ◽

X Ray ◽

Metastable Alloys ◽

Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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