scholarly journals Study of single-electron tunneling oscillations using monte-carlo based modeling algorithms to a capacitive slanted two-dimensional array of tunnel junctions

2021 ◽  
Vol 5 (1) ◽  
pp. 55-67
Author(s):  
Nazim F. Habbani ◽  
◽  
Sharief F. Babikir
Keyword(s):  
Monte Carlo ◽  
Tunnel Junctions ◽  
Electron Tunneling ◽  
Single Electron ◽  
Two Dimensional ◽  
Dimensional Array ◽  
Single Electron Tunneling

Single-Electron Tunneling in One-Dimensional Arrays of Small Tunnel Junctions

1992 ◽  
Vol 61 (6) ◽  
pp. 1871-1874 ◽  
Author(s):  
Akinobu Kanda ◽  
Shingo Katsumoto ◽  
Fumio Komori ◽  
Shun-ichi Kobayashi
Keyword(s):  
Tunnel Junctions ◽  
Electron Tunneling ◽  
Single Electron ◽  
One Dimensional ◽  
Single Electron Tunneling

scholarly journals Characterization of all-chromium tunnel junctions and single-electron tunneling devices fabricated by direct-writing multilayer technique

1999 ◽  
Vol 86 (12) ◽  
pp. 6956-6964 ◽  
Author(s):  
H. Scherer ◽  
Th. Weimann ◽  
P. Hinze ◽  
B. W. Samwer ◽  
A. B. Zorin ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Electron Tunneling ◽  
Single Electron ◽  
Direct Writing ◽  
Single Electron Tunneling ◽  
Tunneling Devices

scholarly journals Modeling and simulation of single-electron transistors

2005 ◽  
Vol 1 (1) ◽  
Author(s):  
Lee Jia Yen ◽  
Ahmad Radzi Mat Isa ◽  
Karsono Ahmad Dasuki
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
Electron Tunneling ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Inner Work ◽  
Single Electron Tunneling ◽  
Single Electronics ◽  
Electron Transistors ◽  
Discrete Charge

Single-electron transistor (SET) can offer lower power consumption and faster operating speed in the era of nanotechnology. It operates in single electronics regime where only one electron can tunnel from source to drain via island. Thus single electron tunneling is the phenomena that describe the principle of SET. Owing to the stochastic nature of the tunneling event, a tunneling electron is considered as a discrete charge. To simulate the SET, Monte Carlo method is used due to its reasonable accuracy in the single electronics simulation. A model is described and used to study the electronic properties of SET. Monte Carlo method follows the tunneling path of a representative number of electrons and it can gives a clear picture of the inner work of the single electron circuits.

ROOM TEMPERATURE TUNNELING CHARACTERISTICS OF ULTRA-SMALL NORMAL JUNCTIONS

1992 ◽  
Vol 06 (05) ◽  
pp. 273-280 ◽  
Author(s):  
M.D. REEVE ◽  
O.G. SYMKO ◽  
R. LI
Keyword(s):  
Scanning Tunneling Microscope ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Tunnel Junctions ◽  
Electron Tunneling ◽  
Single Electron ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Single Electron Tunneling ◽  
Coulomb Staircase

Tunneling studies between a Scanning Tunneling Microscope (STM)-controlled fine NbN tip and a NbN thin film show single electron tunneling characteristics at room temperature. The I-V curves display the Coulomb blockade and the Coulomb staircase caused by single electron charging of a series combination of two tunnel junctions. These room temperature observations indicate that it may be possible to operate single-electron-based devices in non-cryogenic regimes.

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