ROOM TEMPERATURE TUNNELING CHARACTERISTICS OF ULTRA-SMALL NORMAL JUNCTIONS

1992 ◽  
Vol 06 (05) ◽  
pp. 273-280 ◽  
Author(s):  
M.D. REEVE ◽  
O.G. SYMKO ◽  
R. LI
Keyword(s):  
Scanning Tunneling Microscope ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Tunnel Junctions ◽  
Electron Tunneling ◽  
Single Electron ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Single Electron Tunneling ◽  
Coulomb Staircase

Tunneling studies between a Scanning Tunneling Microscope (STM)-controlled fine NbN tip and a NbN thin film show single electron tunneling characteristics at room temperature. The I-V curves display the Coulomb blockade and the Coulomb staircase caused by single electron charging of a series combination of two tunnel junctions. These room temperature observations indicate that it may be possible to operate single-electron-based devices in non-cryogenic regimes.

Electrical Properties of Nanoscale Tisi2 Islands on Si

1999 ◽  
Vol 583 ◽  
Author(s):  
Jaehwan Oh ◽  
Hoon Ham ◽  
Peter Laloli ◽  
R. J. Nemanich
Keyword(s):  
Electrical Properties ◽  
High Temperatures ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Electron Tunneling ◽  
Electrical Characteristics ◽  
Single Electron Tunneling ◽  
Coulomb Staircase ◽  
Beam Deposition

AbstractNanoscale TiSi2 islands are formed by electon beam deposition of a few monolayers of titanium followed by in situ annealing at high temperatures (800–1000°C). The typical island sizes were ˜10 nm. Electrical characteristics of these islands were probed using UHV-STM. I-V spectroscopies on these islands show single electron tunneling effects such as Coulomb blockade and Coulomb staircase at room temperature.

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