scholarly journals Development of low temperature technology for the growth of wide band gap semiconductor nanowires

2016 ◽  
Vol 3 (2) ◽  
pp. 470-485
Author(s):  
David Jishiashvili ◽  
◽  
Zeinab Shiolashvili ◽  
Archil Chirakadze ◽  
Alexander Jishiashvili ◽  
...  
2009 ◽  
Vol 67 ◽  
pp. 191-196 ◽  
Author(s):  
Lubna Hashmi ◽  
M.S. Qureshi ◽  
R.N. Dubey ◽  
M.M. Malik ◽  
Ishrat Alim ◽  
...  

A broad range of II-VI materials has been investigated in order to produce light in the full visible range for optoelectronic applications. The present investigation was carried out for the spectroscopic analysis and synthesis of wide band gap cadmium sulfide nanoparticles. Large-band gap semiconductors have the added advantage in that; they can support higher electric field before breaking down, which means that they can be used for high-power electronic devices.Synthesis has been carried out using colloidal synthesis technique at low temperature. The size, stabilization and optical properties were studied using UV-vis Spectrophotometer and Spectroflourometer. Further, the structural studies of synthesized powder were carried out using X-ray diffraction technique; which also confirms the formation of desired product. The capping ligand and the impurities present in the sample were characterized by Fourier transform infra red spectroscopy. Synthesized CdS powder dispersed in aqueous media gave the value of 193 nm for the onset wavelength using UV-vis spectrophotometer, which is significantly blue-shifted compared to bulk CdS and shows the quantum confinement effect. From the onset wavelength the radius of CdS quantum dot calculated using the Brus equation was found to be ca. 0.7 nm.


2020 ◽  
Vol 22 (48) ◽  
pp. 27987-27998
Author(s):  
Mehmet Aras ◽  
Sümeyra Güler-Kılıç ◽  
Çetin Kılıç

The segregation tendency of an impurity in a semiconductor nanowire can be tuned by adjusting the Fermi level position.


RSC Advances ◽  
2015 ◽  
Vol 5 (104) ◽  
pp. 85598-85605 ◽  
Author(s):  
Feng li ◽  
Yujia li ◽  
Fuyi Jing ◽  
Jingran Zhou ◽  
Yu Chen ◽  
...  

Tungsten trioxides (WO3) are an important class of n-type semiconductor oxide materials with a wide band-gap.


2010 ◽  
Vol 207 (7) ◽  
pp. 1642-1646 ◽  
Author(s):  
B. Chavillon ◽  
L. Cario ◽  
C. Doussier-Brochard ◽  
R. Srinivasan ◽  
L. Le Pleux ◽  
...  

RSC Advances ◽  
2014 ◽  
Vol 4 (97) ◽  
pp. 54625-54630 ◽  
Author(s):  
C. Balamurugan ◽  
D.-W. Lee ◽  
A. R. Maheswari ◽  
M. Parmar

In this study, we report the gas sensing behavior of BiNbO4 nanopowder prepared by a low temperature simple solution-based method.


2002 ◽  
Vol 88 (20) ◽  
Author(s):  
R. Roucka ◽  
J. Tolle ◽  
A. V. G. Chizmeshya ◽  
P. A. Crozier ◽  
C. D. Poweleit ◽  
...  

1997 ◽  
Vol 15 (2) ◽  
pp. 320-331 ◽  
Author(s):  
R. Etemadi ◽  
C. Godet ◽  
J. Perrin ◽  
B. Drévillon ◽  
J. Huc ◽  
...  

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