Low-temperature synthesis of WO3 nanolamella and their sensing properties for xylene

RSC Advances ◽  
2015 ◽  
Vol 5 (104) ◽  
pp. 85598-85605 ◽  
Author(s):  
Feng li ◽  
Yujia li ◽  
Fuyi Jing ◽  
Jingran Zhou ◽  
Yu Chen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Band Gap ◽  
Wide Band ◽  
Oxide Materials ◽  
Important Class ◽  
Wide Band Gap ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Type Semiconductor ◽  
Tungsten Trioxides

Tungsten trioxides (WO3) are an important class of n-type semiconductor oxide materials with a wide band-gap.

Spectroscopic Analysis and Synthesis of Wide Band Gap CdS Quantum Dots Using Colloidal Synthesis Technique at Low Temperature

2009 ◽  
Vol 67 ◽  
pp. 191-196 ◽  
Author(s):  
Lubna Hashmi ◽  
M.S. Qureshi ◽  
R.N. Dubey ◽  
M.M. Malik ◽  
Ishrat Alim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Band Gap ◽  
Spectroscopic Analysis ◽  
Quantum Confinement Effect ◽  
Wide Band ◽  
Colloidal Synthesis ◽  
Visible Range ◽  
Wide Band Gap ◽  
Synthesis Technique ◽  
Analysis And Synthesis

A broad range of II-VI materials has been investigated in order to produce light in the full visible range for optoelectronic applications. The present investigation was carried out for the spectroscopic analysis and synthesis of wide band gap cadmium sulfide nanoparticles. Large-band gap semiconductors have the added advantage in that; they can support higher electric field before breaking down, which means that they can be used for high-power electronic devices.Synthesis has been carried out using colloidal synthesis technique at low temperature. The size, stabilization and optical properties were studied using UV-vis Spectrophotometer and Spectroflourometer. Further, the structural studies of synthesized powder were carried out using X-ray diffraction technique; which also confirms the formation of desired product. The capping ligand and the impurities present in the sample were characterized by Fourier transform infra red spectroscopy. Synthesized CdS powder dispersed in aqueous media gave the value of 193 nm for the onset wavelength using UV-vis spectrophotometer, which is significantly blue-shifted compared to bulk CdS and shows the quantum confinement effect. From the onset wavelength the radius of CdS quantum dot calculated using the Brus equation was found to be ca. 0.7 nm.

scholarly journals Understanding doping anomalies in degenerate p-type semiconductor LaCuOSe

2014 ◽  
Vol 2 (17) ◽  
pp. 3429-3438 ◽  
Author(s):  
David O. Scanlon ◽  
John Buckeridge ◽  
C. Richard A. Catlow ◽  
Graeme W. Watson
Keyword(s):  
Dft Calculations ◽  
Band Gap ◽  
State Of The Art ◽  
Wide Band ◽  
Defect Chemistry ◽  
Wide Band Gap ◽  
Type Semiconductor ◽  
P Type

Using state-of-the-art hybrid DFT calculations we explain the defect chemistry of LaCuOSe, a poorly understood wide band gap p-type conductor.

scholarly journals Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide band gap oxide materials

2020 ◽  
Vol 32 (50) ◽  
pp. 415704
Author(s):  
J Borgersen ◽  
L Vines ◽  
Y K Frodason ◽  
A Kuznetsov ◽  
H von Wenckstern ◽  
...  
Keyword(s):  
Band Gap ◽  
Ion Irradiation ◽  
Wide Band ◽  
Oxide Materials ◽  
Defect Model ◽  
Wide Band Gap

scholarly journals Development of low temperature technology for the growth of wide band gap semiconductor nanowires

2016 ◽  
Vol 3 (2) ◽  
pp. 470-485
Author(s):  
David Jishiashvili ◽  
◽  
Zeinab Shiolashvili ◽  
Archil Chirakadze ◽  
Alexander Jishiashvili ◽  
...  
Keyword(s):  
Low Temperature ◽  
Band Gap ◽  
Wide Band ◽  
Semiconductor Nanowires ◽  
Wide Band Gap

Synthesis of light-coloured nanoparticles of wide band gap p-type semiconductors CuGaO2 and LaOCuS by low temperature hydro/solvothermal processes

2010 ◽  
Vol 207 (7) ◽  
pp. 1642-1646 ◽  
Author(s):  
B. Chavillon ◽  
L. Cario ◽  
C. Doussier-Brochard ◽  
R. Srinivasan ◽  
L. Le Pleux ◽  
...  
Keyword(s):  
Low Temperature ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
P Type

scholarly journals Research on Magnetic Property of Environmental Friendly Material SnO2: Mn, S

2021 ◽  
Vol 237 ◽  
pp. 01023
Author(s):  
Su Lei ◽  
Huang Yi
Keyword(s):  
Band Gap ◽  
Tin Dioxide ◽  
Wide Band ◽  
Oxide Materials ◽  
Photovoltaic Devices ◽  
Wide Band Gap ◽  
Rutile Structure ◽  
Photoelectric Properties ◽  
Electronic Spin ◽  
Physical And Chemical

Tin dioxide (SnO2) is a commonly known material with the rutile structure of wide band gap ntype semiconductor which is widely used like ZnO common oxide materials in daily life. But comparing with ZnO, it has a wider band gap (about 3.6 eV), and a higher exciton binding energy 130 meV. Because of its excellent optical, electrical and other excellent physical and chemical characteristics, SnO2 has been widely adapted in thermoelectric film, gas sensor, photovoltaic devices, magnetic materials, and other related fields. A large number of theories and experiments illustrate that, after the proper doping, the remarkable improvements can be achieved. Based on the first principle, we investigated the photoelectric properties and magnetic properties when the Mn and S were doped in SnO2. It was shown by calculation that a Mn atom provides 1.52 μB magnetic moment and a S atom provides 0.06 μB, while O and Sn atoms rarely contribute to the system. In the system the magnetism is mainly derived from the Mn-3d electronic spin polarization.

Low temperature synthesis wide optical band gap Al and (Al, Na) co-doped ZnO thin films

2011 ◽  
Vol 257 (6) ◽  
pp. 2341-2345 ◽  
Author(s):  
Tao Wang ◽  
Yanmei Liu ◽  
Qingqing Fang ◽  
Mingzai Wu ◽  
Xia Sun ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Band Gap ◽  
Optical Band Gap ◽  
Zno Thin Films ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Doped Zno ◽  
Co Doped
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