Growth and Characterization of Zinc-Oxide Films Grown by Using Plasma-Assisted Molecular Beam Epitaxy on (111) Silicon Substrates with Ti and Titanium Compound Buffer Layers

2008 ◽  
Vol 53 (1) ◽  
pp. 276-281 ◽  
Author(s):  
Sang Mo Yang ◽  
Seok Kyu Han ◽  
Dong-Suk Kang ◽  
Jae Goo Kim ◽  
Soon-Ku Hong ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Oxide Films ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
Zinc Oxide Films ◽  
Titanium Compound

scholarly journals Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 366 ◽  
Author(s):  
Alexana Roshko ◽  
Matt Brubaker ◽  
Paul Blanchard ◽  
Todd Harvey ◽  
Kris Bertness
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Buffer Layers ◽  
Selective Area Growth ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth ◽  
Eutectic Formation

Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al–Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Eutectic related defects in the Si surface caused voids in N-polar samples, but not in metal-polar samples. Likewise, inversion domains were present in N-polar, but not metal-polar samples. The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG.

Characterization of mismatched SiGe grown on low temperature Si buffer layers by molecular beam epitaxy

1997 ◽  
Vol 175-176 ◽  
pp. 499-503 ◽  
Author(s):  
K.K. Linder ◽  
F.C. Zhang ◽  
J.-S. Rieh ◽  
P. Bhattacharya
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Buffer Layers

Growth and characterization of zinc sulfide films by conversion of zinc oxide films with H2S

1989 ◽  
Vol 24 (10) ◽  
pp. 1215-1221 ◽  
Author(s):  
Y-M. Gao ◽  
P. Wu ◽  
J. Baglio ◽  
K. Dwight ◽  
A. Wold
Keyword(s):  
Zinc Oxide ◽  
Zinc Sulfide ◽  
Oxide Films ◽  
Zinc Oxide Films

scholarly journals Separation of AlN layers from silicon substrates by KOH etching

2021 ◽  
Vol 2086 (1) ◽  
pp. 012037
Author(s):  
K Yu Shubina ◽  
D V Mokhov ◽  
T N Berezovskaya ◽  
E V Pirogov ◽  
A V Nashchekin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Damage ◽  
Vapour Phase ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
Vapour Phase Epitaxy ◽  
Aln Buffer ◽  
Cr Film ◽  
Koh Etching

Abstract In this work, the AlN/Si(111) epitaxial structures grown consistently by plasma assisted molecular beam epitaxy (PA MBE) and hydride vapour phase epitaxy (HVPE) methods were studied. The PA MBE AlN buffer layers were synthesized via coalescence overgrowth of self-catalyzed AlN nanocolumns on Si(111) substrates and were used as templates for further HVPE growth of thick AlN layer. It was shown that described approaches can be used to obtain AlN layers with sufficiently smooth morphology. It was found that HVPE AlN inherited crystallographic polarity of the AlN layer grown by PA MBE. It was demonstrated that the etching of such AlN/Si(111) epitaxial structures results in partial separation of the AlN epilayers from the Si(111) substrate and allows to form suspended structures. Moreover, the avoidance of surface damage and backside overetching was achieved by use thin Cr film as surface protective coating and by increasing the layer thickness accordingly.

Fabrication and characterization of ZnMgO nanowalls grown on 4H-SiC by molecular beam epitaxy

2019 ◽  
Vol 52 (1) ◽  
pp. 168-170
Author(s):  
Mieczyslaw A. Pietrzyk ◽  
Aleksandra Wierzbicka ◽  
Marcin Stachowicz ◽  
Dawid Jarosz ◽  
Adrian Kozanecki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Growth Conditions ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fabrication And Characterization

Control of nanostructure growth is a prerequisite for the development of electronic and optoelectronic devices. This paper reports the growth conditions and structural properties of ZnMgO nanowalls grown on the Si face of 4H-SiC substrates by molecular beam epitaxy without catalysts and buffer layers. Images from scanning electron microscopy revealed that the ZnMgO nanowalls are arranged in parallel rows following the stripe morphology of the SiC surface, and their thickness is around 15 nm. The crystal quality of the structures was evaluated by X-ray diffraction measurements.

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