Characterization of mismatched SiGe grown on low temperature Si buffer layers by molecular beam epitaxy

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

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Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

Crystals ◽

10.3390/cryst8090366 ◽

2018 ◽

Vol 8 (9) ◽

pp. 366 ◽

Cited By ~ 8

Author(s):

Alexana Roshko ◽

Matt Brubaker ◽

Paul Blanchard ◽

Todd Harvey ◽

Kris Bertness

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Lattice Mismatch ◽

Buffer Layers ◽

Selective Area Growth ◽

Gan Nanowires ◽

Selective Area ◽

Area Growth ◽

Eutectic Formation

Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al–Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Eutectic related defects in the Si surface caused voids in N-polar samples, but not in metal-polar samples. Likewise, inversion domains were present in N-polar, but not metal-polar samples. The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG.

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Growth and Characterization of Zinc-Oxide Films Grown by Using Plasma-Assisted Molecular Beam Epitaxy on (111) Silicon Substrates with Ti and Titanium Compound Buffer Layers

Journal of the Korean Physical Society ◽

10.3938/jkps.53.276 ◽

2008 ◽

Vol 53 (1) ◽

pp. 276-281 ◽

Cited By ~ 8

Author(s):

Sang Mo Yang ◽

Seok Kyu Han ◽

Dong-Suk Kang ◽

Jae Goo Kim ◽

Soon-Ku Hong ◽

...

Keyword(s):

Zinc Oxide ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Oxide Films ◽

Buffer Layers ◽

Silicon Substrates ◽

Zinc Oxide Films ◽

Titanium Compound

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Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

High Power Laser and Particle Beams ◽

10.3788/hplpb20132506.1523 ◽

2013 ◽

Vol 25 (6) ◽

pp. 1523-1526

Author(s):

万文坚 Wan Wenjian ◽

尹嵘 Yin Rong ◽

韩英军 Han Yingjun ◽

王丰 Wang Feng ◽

郭旭光 Guo Xuguang ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Quantum Wells ◽

Molecular Beam ◽

Multiple Quantum Wells ◽

Molecular Beam Epitaxy Growth ◽

Multiple Quantum

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Two Step Growth of InN Films on Sapphire (0001) Substrates Without Nitridation Process by RF-MBE

MRS Proceedings ◽

10.1557/proc-693-i3.41.1 ◽

2001 ◽

Vol 693 ◽

Author(s):

Tomohiro Yamaguchi ◽

Yoshiki Saito ◽

Kenji Kano ◽

Tomo Muramatsu ◽

Tsutomu Araki ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Radio Frequency ◽

Molecular Beam ◽

Buffer Layers ◽

Radio Frequency Plasma ◽

Single Crystalline ◽

Nitridation Process ◽

Frequency Plasma ◽

Step Growth

AbstractInN films were grown on sapphire (0001) substrates by radio-frequency plasma-assisted molecular beam epitaxy. The InN buffer layers deposited at low temperature were either grown on a substrate with nitridation or on a substrate without nitridation. The InN buffer layers on the nitridated substrates were always single crystalline, whereas the buffer layers on non-nitridated substrates were always polycrystalline. However, even without nitridation process, single crystalline InN films could be grown on the polycrystalline InN buffer layers; in this case, the orientation was always [1120] InN//[1120] sapphire epitaxy, which differed from the [1010] InN//[1120] sapphire epitaxy in films grown with nitridation.

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