scholarly journals Reduction of the dark current in a P3HT-based organic photodiode with a ytterbium-fluoride buffer layer for electron transport

2016 ◽  
Vol 69 (3) ◽  
pp. 421-425 ◽  
Author(s):  
Seong Bin Lim ◽  
Chan Hyuk Ji ◽  
Kee Tae Kim ◽  
Se Young Oh
Keyword(s):  
Electron Transport ◽  
Buffer Layer ◽  
Dark Current ◽  
Ytterbium Fluoride

GaN ON SILICON SUBSTRATE WITH AlN BUFFER LAYER FOR UV PHOTODIODE

2012 ◽  
Vol 21 (01) ◽  
pp. 1250014 ◽  
Author(s):  
L. S. CHUAH ◽  
S. M. THAHAB ◽  
Z. HASSAN
Keyword(s):  
Schottky Barrier ◽  
Buffer Layer ◽  
Barrier Height ◽  
Silicon Substrate ◽  
Dark Current ◽  
Schottky Barrier Height ◽  
Buffer Layers ◽  
Current Ratio ◽  
Principal Mechanism ◽  
Aln Buffer

Nitrogen plasma-assisted molecular beam epitaxy (PAMBE) deposited GaN thin films on (111) n-type silicon substrate with different thickness AlN buffer layers are investigated and distinguished by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and Raman scattering. The thickness of AlN buffer layer ranged from 200 nm to 300 nm. Besides that, the electrical characteristics of the GaN thin film for ultraviolet detecting utilizations are studied by calculating the photo current/dark current ratio on a metal-semiconductor-metal (MSM) photodiode with and without the illumination of Hg-lamp source. The devices have been tested over room temperature (RT). The photocurrent analysis, together with the study of Schottky barrier height (SBH) development, ascertain that the principal mechanism of photo transport is thermionic emission. The photocurrent value is rigorously dependent on Schottky barrier height. The GaN/AlN(200 nm)/n-Si MSM photodiode produces the highest photo/dark current ratio for the lowest strain that consists of the GaN film grown on the AlN (200 nm) buffer layer.

Influence of buffer layer and processing on the dark current of 2.5 µm-wavelength 2%-mismatched InGaAs photodetectors

1997 ◽  
Vol 144 (5) ◽  
pp. 277-282 ◽  
Author(s):  
M. D'Hondt ◽  
P. Demeester ◽  
I. Moerman ◽  
P. Van Daele
Keyword(s):  
Buffer Layer ◽  
Dark Current

Simulation of the effects of defects in low temperature Ge buffer layer on dark current of Si-based Ge photodiodes

2017 ◽  
Vol 38 (4) ◽  
pp. 042001
Author(s):  
Xiaohui Yi ◽  
Zhiwei Huang ◽  
Guangyang Lin ◽  
Cheng Li ◽  
Songyan Chen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Dark Current

Improving electron transport in the hybrid perovskite solar cells using CaMnO3-based buffer layer

Nano Energy ◽  
2018 ◽  
Vol 45 ◽  
pp. 287-297 ◽  
Author(s):  
Kavita Pandey ◽  
Deobrat Singh ◽  
S.K. Gupta ◽  
Pankaj Yadav ◽  
Yogesh Sonvane ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electron Transport ◽  
Buffer Layer ◽  
Perovskite Solar Cells ◽  
Hybrid Perovskite

INFLUENCE OF POLARIZATION CHARGES AND ELECTRON TRAPPING IN THE BUFFER LAYER IN WURTZITE PHASE AlGaN/GaN HFETs

2006 ◽  
Vol 20 (22) ◽  
pp. 1397-1404 ◽  
Author(s):  
H. ARABSHAHI ◽  
M. H. GHASEMIAN
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Buffer Layer ◽  
Interface Layer ◽  
Electron Trapping ◽  
Wurtzite Phase ◽  
Polarization Effects ◽  
Ensemble Monte Carlo ◽  
Current Collapse ◽  
Gan Hfet

Ensemble Monte Carlo simulations have been performed to model electron transport in wurtzite phase AlGaN/GaN heterojunction FETs. Planar Al 0.2 Ga 0.8 N/GaN HFET structures with a 78 nm Al 0.2 Ga 0.8 N pseudomorphically strained layer were simulated, where the spontaneous and piezoelectric polarization effects were taken into account. Trap centers located in the buffer layer has also been simulated to include the effect of trapping levels on current collapse in GaN HFETs. The polarization effects was shown to not only increase the current density, but also improve the electron transport in the interface layer by inducing a higher electron density to the positive polarized sheet and away from the buffer layer.

Highly stable and efficient cathode-buffer-layer-free inverted perovskite solar cells

Nanoscale ◽  
2021 ◽  
Author(s):  
Yong Ryun Kim ◽  
Chang Mok Oh ◽  
Chang Jae Yoon ◽  
Ju-Hyeon Kim ◽  
Kiyoung Park ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electron Transport ◽  
Buffer Layer ◽  
Perovskite Solar Cells ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Device Structure ◽  
Insulating Polymers ◽  
Cathode Buffer Layer

We proposed a novel simplified device structure for efficient and stable inverted perovskite solar cells that has no cathode buffer layer by modifying the electron transport layer with insulating polymers as an additive.

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