A Study on High Temperature Oxidation of Titanium Alloys in Solid State Bonding Process

Author(s):  
Ho Sung Lee ◽  
Jong Hoon Yoon ◽  
Yeong Moo Yi
2007 ◽  
Vol 544-545 ◽  
pp. 183-186 ◽  
Author(s):  
Ho Sung Lee ◽  
Jong Hoon Yoon ◽  
Yeong Moo Yi

The surface oxidation behavior was investigated over a range of solid state bonding condition of the Ti-6Al-4V ELI alloy. Since the oxides at the bonding interface may prevent the materials from complete bonding, it is important to understand the oxidation behavior at solid state bonding condition. The activation energy of oxidation of Ti-6Al-4V ELI is estimated to be 318 KJ/mol in an environment of solid state bonding process. For Ti-6Al-4V ELI alloy, strucutral integrity of bonding interface without oxides have been obtained at 850°C applying pressure of 3MPa for 1 hour. Solid state diffusion bonding of Ti-15V-3Cr-3Sn-3Al alloy was also obtained under a pressure of 6MPa for 3 hours at 925°C.


2020 ◽  
Vol 321 ◽  
pp. 03006
Author(s):  
Antoine CASADEBAIGT ◽  
Daniel MONCEAU ◽  
Jonathan HUGUES

Titanium alloys, such as Ti-6Al-4V alloy, fabricated by additive manufacturing processes is a winning combination in the aeronautic field. Indeed, the high specific mechanical properties of titanium alloys with the optimized design of parts allowed by additive manufacturing should allow aircraft weight reduction. But, the long term use of Ti-6Al-4V alloy is limited to 315 °C due to high oxidation kinetics above this temperature [1]. The formation of an oxygen diffusion zone in the metal and an oxide layer above it may reduce the durability of titanium parts leading to premature failure [2, 3]. In this study, Ti-6Al-4V alloy was fabricated by Electron Beam Melting (EBM). As built microstructure evolutions after Hot Isostatic Pressure (HIP) treatment at 920 °C and 1000 bar for 2h were investigated. As built microstructure of Ti-6Al-4V fabricated by EBM was composed of Ti-α laths in a Ti-β matrix. High temperature oxidation of Ti-6Al-4V alloy at 600 °C of as-built and HIP-ed microstructures was studied. This temperature was chosen to increase oxidation kinetics and to study the influence of oxidation on tensile mechanical properties. In parallel, two other oxidation temperatures, i.e. 500 °C and 550°C allowed to access to the effect of temperature on long-term oxidation.


2009 ◽  
Vol 75 ◽  
pp. 67-70
Author(s):  
Hui Cong Liu ◽  
Li Qun Zhu ◽  
Wei Ping Li

Titanium alloys has been widely used in many fields, while in high temperature and rigorous corrosive environment, it is very necessary to do some work on the surface of titanium alloys to satisfy with application purpose. In this paper, four kinds of sol film were prepared on titanium alloys with and without anodic oxidation film. The prepared sol included Al2O3, Al2O3-ZrO2 and doped sol by adding additive into them respectively. The film thickness, high temperature oxidation resistance and corrosion resistance after high temperature oxidation for some time were investigated. The results show that the sol film obtained on the anodic oxidation film of titanium alloys is thicker than that without anodic oxidation film. Compared with the other three kinds of film, the doped Al2O3-ZrO2 sol film has the best high temperature oxidation resistance and corrosion resistance due to insulation effect of the sol film, and the composition of additive and zirconic.


2009 ◽  
Vol 75 ◽  
pp. 63-66
Author(s):  
Hui Cong Liu ◽  
Li Qun Zhu ◽  
Wei Ping Li

In this paper, the anodic oxidation film was prepared in the 1~3mol/L NaAlO2 solution with and without silicon sol added. The film thickness, high temperature oxidation resistance, corrosion resistance, and SEM image, element composition in the film were investigated. The results show that there were obvious improvement in high temperature oxidation resistance and corrosion resistance of the film on titanium alloys after adding silicon sol into the NaAlO2 solution, and with the sol percentage in the solution increased, the foregoing protection abilities of the anodic oxidation film became better, while the film thickness was little affected with the sol percentage difference. The reason was discussed and the effective factor was the silicon composition and more even and compact image in the film.


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