Two-stage model of prepreg bonding interface formation in automated fiber placement process

While Automated Fiber Placement (AFP) of thermoset matrix composites are widely used in the aviation industry, there is little conclusive research on the relationship between the physical model of bonding interface formation process and the actual bonding strength between prepreg layers formed in AFP process. Although massive amounts of experimental data on prepreg tack have been achieved from existing research, engineers are unable to use these data as a decisive criterion in choosing process parameters. In this research, a prepreg layup physical model based on reptation model and viscoelastic mechanical model is built, in which the bonding interface formation process is divided into two stages, namely, diffusion and viscous stage. Layup-peeling experiments are conducted via a special designed high-speed layup experimental platform so that practical AFP process parameters can be imitated, and a logarithmic curve of layup velocity-peeling energy under different layup pressure is achieved. The slope of the logarithmic curve and the surface morphology of the sample after peeling prove the correctness of the established model. Simultaneously, the experimental data proves that when prepreg is peeled off, the transition from the cohesive failure mode to the interface failure mode occurs at the laying speed between 100 mm/s and 200 mm/s. These results can be used as a reference for choosing AFP process parameters to realize the balance between good bonding quality and harmless separation of adjacent prepreg layers.

Low Temperature Hydrophilic SiC Wafer Level Direct Bonding for Ultrahigh-Voltage Device Applications

SiC direct bonding using O2 plasma activation is investigated in this work. SiC substrate and n− SiC epitaxy growth layer are activated with an optimized duration of 60s and power of the oxygen ion beam source at 20 W. After O2 plasma activation, both the SiC substrate and n− SiC epitaxy growth layer present a sufficient hydrophilic surface for bonding. The two 4-inch wafers are prebonded at room temperature followed by an annealing process in an atmospheric N2 ambient for 3 h at 300 °C. The scanning results obtained by C-mode scanning acoustic microscopy (C-SAM) shows a high bonding uniformity. The bonding strength of 1473 mJ/m2 is achieved. The bonding mechanisms are investigated through interface analysis by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX). Oxygen is found between the two interfaces, which indicates Si–O and C–O are formed at the bonding interface. However, a C-rich area is also detected at the bonding interface, which reveals the formation of C-C bonds in the activated SiC surface layer. These results show the potential of low cost and efficient surface activation method for SiC direct bonding for ultrahigh-voltage devices applications.

Microstructure of Ag Nano Paste Joint and Its Influence on Reliability

In this paper, the microstructure of Ag nano paste joint was investigated in pressure-less sintering conditions, and the influence of the microstructure on the joint’s reliability was studied. Firstly, silver nanoparticles (Ag NPs) were synthesized using the redox reaction method. To tightly stack the Ag NPs in nano paste, Ag NPs with sizes of 30~50 nm and submicron-sized Ag particles were mixed. It was found that increasing the sintering temperature or sintering time can reduce the porosity of the bonding layer and the interfacial crack simultaneously, resulting in higher shear strength. When sintering at a temperature of 250 °C, a complete bonding interface was formed, with a 0.68 μm interdiffusion layer. At a higher temperature (300 °C), the bonding interface reached 1.5 μm, providing 35.9 ± 1.7 MPa of shear strength. The reliability of the die attachment was analyzed under thermal shocking from −65 °C to 150 °C for 50 cycles. As the crack could quickly grow through the interfacial defects, the separation ratio was 85% and 67% when sintered at 150 °C and 200 °C, respectively. Because of the reliable bonding interface between the die and the substrate, the Ag nano paste joint formed a slight crack on the edge of the die when sintering at 250 °C. When the joint was sintered at 300 °C, the small voids became large voids, which featured lower resistance to crack growth. Thus, instead of further improved reliability, the separation ratio increased to 37%.

Effects of static load and residual stress on fused silica direct bonding interface properties

Defect free direct bonding of rigid and large area glass samples, such as prisms, becomes increasingly important for the manufacturing of modern optical and optomechanical components. Typically, in order to apply a static load during the annealing step, specialized heat-resistant pressure mountings are required. This makes manufacturing effortful and cost-intensive. In this paper, we present plasma activated bonding experiments conducted on fused silica plates where residual stress has been introduced prior to the contacting step and where annealing is performed with and without a static load. We find that in case of a sufficiently smooth surface, bonding strength is insensitive towards residual stress or static load, or more precisely, towards the interface stress. Furthermore, the residual Fresnel reflection losses of the realized bonding interface were optically measured and they amount to only $$10^{-6}$$ 10 - 6 . We propose that a consideration of the change in Gibbs free energy, dG, allows qualitatively predicting the resulting bonding strength and its spatial distribution, where dG is determined by surface energy and interface stress. At the end of this article, conceivable applications are discussed.

Shearing Characteristics of Cu-Cu Joints Fabricated by Two-Step Process Using Highly -Oriented Nanotwinned Cu

Cu-Cu bonding has the potential to break through the extreme boundary of scaling down chips’ I/Os into the sub-micrometer scale. In this study, we investigated the effect of 2-step bonding on the shear strength and electrical resistance of Cu-Cu microbumps using highly <111>-oriented nanotwinned Cu (nt-Cu). Alignment and bonding were achieved at 10 s in the first step, and a post-annealing process was further conducted to enhance its bonding strength. Results show that bonding strength was enhanced by 2–3 times after a post-annealing step. We found 50% of ductile fractures among 4548 post-annealed microbumps in one chip, while the rate was less than 20% for the as-bonded counterparts. During the post-annealing, interfacial grain growth and recrystallization occurred, and the bonding interface was eliminated. Ductile fracture in the form of zig-zag grain boundary was found at the original bonding interface, thus resulting in an increase in bonding strength of the microbumps.

Bonding of Cast Iron-Aluminum In Bimetallic Castings By High Pressure Die Casting Process

A practical bimetallic casting consisting of aluminum matrix and cast iron inserts was manufactured via high pressure die casting (HPDC) process. Different surface treatment methods of the cast iron inserts, including salt membrane plating and electrogalvanizing, were adopted to improve the bonding quality of bimetallic castings. Microstructure characterization on the bonding interface was conducted at different locations of bimetallic castings. Results indicate that compounds with flawless and continuously metallurgical bonding interface can be successfully fabricated by the HPDC process with the zinc rack plating treatment on the surface of cast iron inserts which results in a dense zinc coating with an average thickness of 8 μm. The melt flow speed and heat transition during solidification of the HPDC process are two key factors in determining the bonding integrity of bimetallic castings. With the dissolution and diffusion of the very thin zinc coating during solidification, there is no obvious aggregation of zinc element at the metallurgical bonding interface. Instead, a reaction layer with an irregular tongue-like morphology is formed with an average thickness of approximately 1 μm while it mainly consists of intermetallic phases Al60Cu30Fe10 and Al2FeSi, etc.