AbstractWe have designed, constructed, and are operating a unique capability for the production of highly controlled homophase and heterophase interfaces: an ultrahigh vacuum diffusion bonding machine. This machine is based on a previous design which is operating at the Max Planck Institut für Metallforschung, Institut für Werkstoffwissenschaft, Stuttgart, FRG. In this method, flat-polished single or polycrystals of materials with controlled surface topography can be heat treated up to 1500°C in ultrahigh vacuum. Surfaces of annealed samples can be sputter cleaned and characterized prior to bonding. Samples can then be precisely aligned crystallographically to obtain desired grain boundary misorientations. Material couples can then be bonded at temperatures up to 1500°C and pressures up to 10 MPa. Results are presented from our initial work on Mo grain boundaries and Cu/Al2O3 interfaces.
Theoretical Study of Ceramic Interfaces Using Ab Initio Pseudopotential Method.
