Point Defects Interaction with Extended Defects and Impurities and Its Influence on the Si-SiO2 System Properties

Author(s):  
Daniel Kropman ◽  
U. Abru ◽  
T. Kärner ◽  
U. Ugaste ◽  
E. Mellikov ◽  
...  
2005 ◽  
Vol 864 ◽  
Author(s):  
D. Kropman ◽  
U. Abru ◽  
T. Kärner ◽  
U. Ugaste ◽  
E. Mellikov ◽  
...  

AbstractThe type and density of the point defects that are generated in the Si surface layer during thermal oxidation depend on the oxidation condition: tempertature, cooling rate, oxidation time, impurity content. The interaction between point defects with extended defects and impurities affect the Si-SiO2 interface properties. The influences of point defects may be diminished and the interface properties improved by an appropriate choice of oxidation conditions.


2005 ◽  
Vol 108-109 ◽  
pp. 333-338
Author(s):  
Daniel Kropman ◽  
U. Abru ◽  
Tiit Kärner ◽  
U. Ugaste ◽  
E. Mellikov ◽  
...  

The type and density of the point defects that are generated in the Si surface layer during thermal oxidation depend on the oxidation condition: temperature, cooling rate, oxidation time, impurity content. The interaction between point defects with extended defects and impurities affect the Si-SiO2 interface properties. The influence of point defects may be diminished and the interface properties improved by an appropriate choice of oxidation conditions.


2007 ◽  
Vol 131-133 ◽  
pp. 345-350 ◽  
Author(s):  
Daniel Kropman ◽  
E. Mellikov ◽  
Tiit Kärner ◽  
Ü. Ugaste ◽  
Tony Laas ◽  
...  

The type and density of the point defects that are generated in the Si surface layer during thermal oxidation depend on the oxidation condition: temperature, cooling rate, oxidation time, impurity content. Interaction between the point defects with extended defects and impurities affects the SiO2 structure and Si-SiO2 interface properties. Hydrogen adsorption on n- and p- type wafers is different. One possible reason for that can be the strength of the magnetic interaction between the hydrogen and paramagnetic impurities of the adsorbent. The influence of point defects and impurities may be diminished and the interface properties improved by an appropriate choice of the oxidation conditions and postoxidation laser irradiation.


2004 ◽  
Vol 459 (1-2) ◽  
pp. 53-57
Author(s):  
D Kropman ◽  
T Kärner ◽  
U Abru ◽  
Ü Ugaste ◽  
E Mellikov

2004 ◽  
Vol 114-115 ◽  
pp. 295-298
Author(s):  
D. Kropman ◽  
T. Kärner ◽  
U. Abru ◽  
Ü. Ugaste ◽  
E. Mellikov ◽  
...  

2012 ◽  
Vol 725 ◽  
pp. 63-66 ◽  
Author(s):  
Vanesa Hortelano ◽  
Oscar Martínez ◽  
Juan Jiménez ◽  
Bu Guo Wang ◽  
S. Swider ◽  
...  

GaN crystals grown in supercritical ammonia by the ammonothermal method were studied by cathodoluminescence (CL), both in image and spectrally resolved modes. The main extended defects and the incorporation of point defects and impurities in different growth sectors were revealed. The influence of the seeds, the role of the growth planes and the changes in the crystal quality during the growth run are discussed.


Author(s):  
W. T. Donlon ◽  
S. Shinozaki ◽  
E. M. Logothetis ◽  
W. Kaizer

Since point defects have a limited solubility in the rutile (TiO2) lattice, small deviations from stoichiometry are known to produce crystallographic shear (CS) planes which accomodate local variations in composition. The material used in this study was porous polycrystalline TiO2 (60% dense), in the form of 3mm. diameter disks, 1mm thick. Samples were mechanically polished, ion-milled by conventional techniques, and initially examined with the use of a Siemens EM102. The electron transparent thin foils were then heat-treated under controlled atmospheres of CO/CO2 and H2 and reexamined in the same manner.The “as-received” material contained mostly TiO2 grains (∼5μm diameter) which had no extended defects. Several grains however, aid exhibit a structure similar to micro-twinned grains observed in reduced rutile. Lattice fringe images (Fig. 1) of these grains reveal that the adjoining layers are not simply twin related variants of a single TinO2n-1 compound. Rather these layers (100 - 250 Å wide) are alternately comprised of stoichiometric TiO2 (rutile) and reduced TiO2 in the form of Ti8O15, with the Ti8O15 layers on either side of the TiO2 being twin related.


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