Application of Energy Dispersive X-Ray Diffraction for the Efficient Investigation of Internal Stresses in Thin Films

Origin of ultraviolet (UV) luminescence from bulk ZnO has been investigated with the help of photoluminescence (PL) measurements. Thin films of ZnO having 52%, 53% and 54% of Zn-contents were prepared by means of molecular beam epitaxy (MBE). We observed a dominant UV line at 3.28 eV and a visible line centered at 2.5 eV in the PL spectrum performed at room temperature. The intensity of UV line has been found to depend upon the Zn percentage in the ZnO layers. Thereby, we correlate the UV line in our samples with the Zn-interstitials-bound exciton (Zni-X) recombination. The results obtained from, x-ray diffraction, the energy dispersive X-ray spectrum (EDAX) and Raman spectroscopy supported the PL results.

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In-situ energy-dispersive X-ray diffraction of metal sulfide assisted crystallization of strongly (001) textured photoactive tungsten disulfide thin films

Thin Solid Films ◽

10.1016/j.tsf.2008.11.118 ◽

2009 ◽

Vol 517 (10) ◽

pp. 3148-3151 ◽

Cited By ~ 12

Author(s):

S. Brunken ◽

R. Mientus ◽

K. Ellmer

Keyword(s):

Thin Films ◽

Metal Sulfide ◽

Tungsten Disulfide ◽

Energy Dispersive ◽

X Ray Diffraction ◽

X Ray

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Fabrication of Cu2ZnSnS4 Thin Films through Sulfurization of Co-Electrodeposited Cu-Zn-Sn Metallic Precursor

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.915-916.838 ◽

2014 ◽

Vol 915-916 ◽

pp. 838-841

Author(s):

Meng Xie ◽

Hai Tao Zhang ◽

Shu Zhang ◽

Yong Xiang

Keyword(s):

Thin Films ◽

Raman Spectroscopy ◽

Energy Dispersive ◽

X Ray Diffraction ◽

Homogeneous Surface ◽

Metallic Precursor ◽

X Ray

Cu2ZnSnS4 thin films have been synthesized through sulfurization of co-electrodeposited Cu-Zn-Sn metallic precursor. The obtained metallic precursor shows homogeneous surface. Combination of X-ray diffraction, energy dispersive X-Ray spectroscopy and Raman spectroscopy results shows that kesterite structure of Cu2ZnSnS4 is formed, demonstrating that co-electrodeposition-sulfurization is a viable process for the synthesis of Cu2ZnSnS4 film.

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Recrystallization of Cu–In–S thin films studiedin situby energy-dispersive X-ray diffraction

Journal of Applied Crystallography ◽

10.1107/s0021889810025860 ◽

2010 ◽

Vol 43 (5) ◽

pp. 1053-1061 ◽

Cited By ~ 16

Author(s):

Humberto Rodriguez-Alvarez ◽

Roland Mainz ◽

Björn Marsen ◽

Daniel Abou-Ras ◽

Hans Werner Schock

Keyword(s):

Thin Films ◽

Grain Growth ◽

Profile Analysis ◽

Energy Dispersive ◽

Line Profile Analysis ◽

Material System ◽

X Ray Diffraction ◽

Sulfur Pressure ◽

X Ray ◽

Pure Cu

The recrystallization of Cu–In–S thin films has been monitored in real time by means of synchrotron-based energy-dispersive X-ray diffraction. To trigger recrystallization, nanocrystalline Cu–In–S layers with [Cu]/[In] < 1 were covered with layers of CuS or pure Cu, so that the overall ratio [Cu]/[In] > 1. The bilayer films were heated to 773 K and the evolution of the microstructure was monitoredin situ viadiffraction spectra. In the first step of the analysis, the diffraction data were used to identify solid-state phase transitions as a function of temperature. In a further step, single-line profile analysis of the 112 CuInS2reflection was used to study grain growth in this material system. The recrystallization was investigated under two sulfur pressure conditions and for different [Cu]/[In] ratios. The recrystallization is composed of three steps: consumption of the CuIn5S8phase, grain growth, and a transition from the Cu–Au-type to the chalcopyrite-type structure of CuInS2. Increasing the sulfur pressure during heating systematically reduces the temperature at which grain growth sets in. Various paths to control the recrystallization of Cu–In–S thin films are proposed.

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Pressure Dependent Rapid Thermal Processing of CuInS2 Thin Films Investigated by In-Situ Energy Dispersive X-ray Diffraction

MRS Proceedings ◽

10.1557/proc-1012-y13-09 ◽

2007 ◽

Vol 1012 ◽

Cited By ~ 1

Author(s):

Immo Michael Kötschau ◽

Humberto Rodriguez-Alvarez ◽

Cornelia Streeck ◽

Alfons Weber ◽

Manuela Klaus ◽

...

Keyword(s):

Thin Films ◽

Partial Pressure ◽

Thermal Processing ◽

Reaction Pathway ◽

Rapid Thermal Processing ◽

Energy Dispersive ◽

X Ray Diffraction ◽

Crystalline Phases ◽

X Ray

AbstractThe rapid thermal processing (RTP) of Cu-rich Cu/In precursors for the synthesis of CuInS2 thin films is possible within a broad processing window regarding leading parameters like top temperature, heating rate, and Cu excess. The key reaction pathway for the CuInS2 phase formation has already been investigated by in-situ energy dispersive X-ray diffraction (EDXRD) for various precursor stoichiometries, heating rates and top temperatures at sulphur partial pressure conditions which are typical for physical vapour deposition processes. According to the phase diagrams of the binary sulphide phases, the sulfur partial pressure strongly determines the occuring crystalline phases. However, a controlled variation of the maximum sulphur partial in a typical RTP experiment has not been carried out yet. In order to study the influence of this parameter a special RTP reaction chamber was designed suitable for in-situ EDXRD experiments at the EDDI beamline at BESSY, Berlin. In a typical in-situ RTP/EDXRD experiment sulphur and a Cu/In/Mo/glass precursor are placed in an evacuated graphite reactor. The amount of sulphur determines the maximum pressure available at the top temperature of the experiment. As the RTP process proceeds a complete EDXRD spectrum is acquired every 10 seconds and thus the various stages of the reaction path and the crystalline phases can be monitored. The first experiments show already a significant change in the reaction pathway and the secondary Cu-S phases which segregate on top of the CuInS2 thin film during the reaction.

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