Pressure Dependent Rapid Thermal Processing of CuInS2 Thin Films Investigated by In-Situ Energy Dispersive X-ray Diffraction

AbstractThe rapid thermal processing (RTP) of Cu-rich Cu/In precursors for the synthesis of CuInS2 thin films is possible within a broad processing window regarding leading parameters like top temperature, heating rate, and Cu excess. The key reaction pathway for the CuInS2 phase formation has already been investigated by in-situ energy dispersive X-ray diffraction (EDXRD) for various precursor stoichiometries, heating rates and top temperatures at sulphur partial pressure conditions which are typical for physical vapour deposition processes. According to the phase diagrams of the binary sulphide phases, the sulfur partial pressure strongly determines the occuring crystalline phases. However, a controlled variation of the maximum sulphur partial in a typical RTP experiment has not been carried out yet. In order to study the influence of this parameter a special RTP reaction chamber was designed suitable for in-situ EDXRD experiments at the EDDI beamline at BESSY, Berlin. In a typical in-situ RTP/EDXRD experiment sulphur and a Cu/In/Mo/glass precursor are placed in an evacuated graphite reactor. The amount of sulphur determines the maximum pressure available at the top temperature of the experiment. As the RTP process proceeds a complete EDXRD spectrum is acquired every 10 seconds and thus the various stages of the reaction path and the crystalline phases can be monitored. The first experiments show already a significant change in the reaction pathway and the secondary Cu-S phases which segregate on top of the CuInS2 thin film during the reaction.

Download Full-text

Thermal stability and miscibility of co-evaporated methyl ammonium lead halide (MAPbX3, X = I, Br, Cl) thin films analysed by in situ X-ray diffraction

Journal of Materials Chemistry A ◽

10.1039/c8ta02775g ◽

2018 ◽

Vol 6 (24) ◽

pp. 11496-11506 ◽

Cited By ~ 19

Author(s):

Paul Pistor ◽

Thomas Burwig ◽

Carlo Brzuska ◽

Björn Weber ◽

Wolfgang Fränzel

Keyword(s):

Thin Films ◽

Thermal Stability ◽

Thermal Treatment ◽

Phase Evolution ◽

X Ray Diffraction ◽

Crystalline Phases ◽

X Ray ◽

Subsequent Thermal Treatment ◽

Lead Halide

We present the identification of crystalline phases by in situ X-ray diffraction during growth and monitor the phase evolution during subsequent thermal treatment of CH3NH3PbX3 (X = I, Br, Cl) perovskite thin films.

Download Full-text

Rapid thermal processing chamber for in-situ x-ray diffraction

Review of Scientific Instruments ◽

10.1063/1.4904848 ◽

2015 ◽

Vol 86 (1) ◽

pp. 013902 ◽

Cited By ~ 9

Author(s):

Md. Imteyaz Ahmad ◽

Douglas G. Van Campen ◽

Jeremy D. Fields ◽

Jiafan Yu ◽

Vanessa L. Pool ◽

...

Keyword(s):

Thermal Processing ◽

Rapid Thermal Processing ◽

X Ray Diffraction ◽

X Ray

Download Full-text

In-situ energy-dispersive X-ray diffraction of metal sulfide assisted crystallization of strongly (001) textured photoactive tungsten disulfide thin films

Thin Solid Films ◽

10.1016/j.tsf.2008.11.118 ◽

2009 ◽

Vol 517 (10) ◽

pp. 3148-3151 ◽

Cited By ~ 12

Author(s):

S. Brunken ◽

R. Mientus ◽

K. Ellmer

Keyword(s):

Thin Films ◽

Metal Sulfide ◽

Tungsten Disulfide ◽

Energy Dispersive ◽

X Ray Diffraction ◽

X Ray

Download Full-text

Crystallization Dynamics and Rapid Thermal Processing of PZT Thin Films

MRS Proceedings ◽

10.1557/proc-243-33 ◽

1991 ◽

Vol 243 ◽

Cited By ~ 2

Author(s):

Jiayu Chen ◽

Keith G. Brooks ◽

K.R. Udayakumar ◽

L. Eric Cross

Keyword(s):

Thin Films ◽

Thermal Processing ◽

Crystallization Process ◽

Rapid Thermal Processing ◽

Environmental Scanning Electron Microscopy ◽

Environmental Scanning ◽

X Ray Diffraction ◽

Pzt Thin Films ◽

Temperature Time

AbstractThe crystallization process of PZT thin films has been studied in situ by means of Environmental Scanning Electron Microscopy ( ESEM ). Based on the ESEM observations, the Rapid Thermal Processing (RTP) technique has been employed to crystallize ferroelectric thin films. Various annealing temperature-time combinations were investigated; the results indicate the crystallization process to be very fast. X-ray diffraction data shows the crystallization to be complete in 10 seconds at 600°C, and in 1 second at 700°C. In comparison with conventionally furnace processed films, the RTP films have comparable ferroelectric and dielectric properties, but are distinguished by superior breakdown strengths and morphologically smoother surface. The relation between microstructure of films and crystallizing parameters has been studied.

Download Full-text

In-situ studies of the recrystallization process of CuInS2 thin films by energy dispersive X-ray diffraction

Thin Solid Films ◽

10.1016/j.tsf.2010.12.229 ◽

2011 ◽

Vol 519 (21) ◽

pp. 7193-7196 ◽

Cited By ~ 11

Author(s):

D. Thomas ◽

R. Mainz ◽

H. Rodriguez-Alvarez ◽

B. Marsen ◽

D. Abou-Ras ◽

...

Keyword(s):

Thin Films ◽

Energy Dispersive ◽

Recrystallization Process ◽

X Ray Diffraction ◽

X Ray ◽

In Situ Studies ◽

Cuins2 Thin Films

Download Full-text

Formation of Cu2ZnSnS4 and Cu2ZnSnS4-CuInS2 Thin Films Investigated by In-Situ Energy Dispersive X-Ray Diffraction

MRS Proceedings ◽

10.1557/proc-1012-y03-35 ◽

2007 ◽

Vol 1012 ◽

Cited By ~ 12

Author(s):

Alfons Weber ◽

Immo Kötschau ◽

Susan Schorr ◽

Hans-Werner Schock

Keyword(s):

Thin Films ◽

Reaction Path ◽

Energy Dispersive ◽

X Ray Diffraction ◽

X Ray ◽

Diffusion Effects ◽

Cuins2 Thin Films ◽

Diffraction Peaks ◽

Poor Adhesion

AbstractChalcopyrite CuInS2 and the structurally related kesterite Cu2ZnSnS4 are known as photovoltaic absorber materials. In this study different precursor thin films of the quaternary Cu-Zn-Sn-S system (stacking: Mo/CuS/ZnS-SnS) and of the pentenary Cu-In-Zn-Sn-S system (stacking: Mo/CuIn/ZnS-SnS) were annealed in sulfur atmosphere. The predominant crystalline phases were detected by in-situ energy dispersive X-ray diffraction (EDXRD). Additionally the X-ray fluorescence signals of the film components were recorded to detect diffusion effects. For the quaternary system we found ZnS, CuS, Cu2-xS, Sn2S3 and SnS as main binary phases during annealing. The Sn2S3-SnS phase transition had a significant impact on the later formation of ternary/quaternary phases. A high diffusivity of copper can explain the little influence of the precursor stacking on the reaction path and may also be responsible for the poor adhesion of the films. For annealing temperatures above 450°C Cu2ZnSnS4 can be identified clearly by XRD. The incorporation of indium in the system leads to new diffraction peaks which can be explained by the formation of solid solutions in the system CuInS2-Cu2ZnSnS4.

Download Full-text

In situ Characterization of Functional Organic Thin Films by Energy Dispersive Grazing Incidence X-ray Diffraction

MRS Proceedings ◽

10.1557/proc-502-151 ◽

1997 ◽

Vol 502 ◽

Author(s):

Yuji Yoshida ◽

Hiroshi Takiguchi ◽

Nobutaka Tanigaki ◽

Kiyoshi Yase

Keyword(s):

Thin Films ◽

Growth Process ◽

Organic Thin Films ◽

Grazing Incidence ◽

Energy Dispersive ◽

Vacuum System ◽

Initial Growth ◽

X Ray Diffraction ◽

X Ray

ABSTRACTWe are investigating well-ordered highly crystalline thin films made using organic molecular beam deposition (OMBD) since it is important to control the formation mechanism at the initial growth process. Then, we developed a new in situ technique of energy dispersive grazing incidence X-ray diffraction utilized within an ultrahigh vacuum system. This technique (in situ ED-GID) makes it possible to examine the crystal structure, orientation and morphology of organic thin films during deposition without any damage to the film. In the present review, we examined the growth process of thin films of functional organic dyes, fullerene (C60) and p-sexiphenyl (6P) by using this in situ ED-GID. The crystal strucutre and molecular orientation in epitaxially-grown thin films were confirmed during the initial stages of growth. Also, the morphology of C60 thin films was examined during the deposition. As a result, it was confirmed that the decay curves of X-ray fluorescence indicate different island growth in C60 thin films.

Download Full-text

Novel Multilayer Process for CuInSe2 Thin Film Formation by Rapid Thermal Processing

MRS Proceedings ◽

10.1557/proc-485-163 ◽

1997 ◽

Vol 485 ◽

Cited By ~ 2

Author(s):

Chih-hung Chang ◽

Billy Stanbery ◽

Augusto Morrone ◽

Albert Davydov ◽

Tim Anderson

Keyword(s):

Thermal Processing ◽

Physical Vapor Deposition ◽

Film Formation ◽

Rapid Thermal Processing ◽

Precursor Film ◽

Bilayer Structure ◽

X Ray Diffraction ◽

X Ray ◽

Deposition Parameters ◽

Cuinse2 Thin Film

AbstractCuInSe2 thin films have been synthesized from binary precursors by Rapid Thermal Processing (RTP) at a set-point temperature of 290°C for 70 s. With appropriate processing conditions no detrimental Cu2-xSe phase was detected in the CIS films. The novel binary precursor approach consisted of a bilayer structure of In-Se and Cu-Se compounds. This bilayer structure was deposited by migration enhanced physical vapor deposition at a low temperature (200°C) and the influence of deposition parameters on the precursor film composition was determined. The bilayer structure was then processed by RTP and characterized for constitution by X-ray diffraction and for composition by Wavelength Dispersive X-ray Spectroscopy.

Download Full-text