Analytical Threshold Voltage Models for Strained Si/Strained Si1-xGex/Relaxd Si1-yGey PMOSFET

2011 ◽  
Vol 110-116 ◽  
pp. 5447-5451
Author(s):  
Shan Shan Qin ◽  
He Ming Zhang ◽  
Hui Yong Hu ◽  
Xiao Yan Wang ◽  
Guan Yu Wang
Keyword(s):  
Threshold Voltage ◽  
Hole Mobility ◽  
Oxide Semiconductor ◽  
Strained Si ◽  
Dual Channel ◽  
Buried Channel ◽  
Strong Inversion ◽  
Effect Transistor ◽  
P Type ◽  
Strained Sige

Threshold voltage models for both buried channel and surface channel for the dual-channel strained Si/strained Si1-xGex/relaxd Si1-yGey(s-Si/s-SiGe/Si1-yGey) p-type metal-oxide-semiconductor field-effect transistor (PMOSFET) are presented in this paper. And the maximum allowed thickness of s-Si is given, which can ensure that the strong inversion appears earlier in the buried channel (compressive strained SiGe) than in the surface channel, because the hole mobility in the buried channel is higher than that the surface channel. They offer a good accuracy as compared with the results of device simulator ISE.

Hole mobility enhancements in strained Si/Si1−yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x

2001 ◽  
Vol 79 (25) ◽  
pp. 4246-4248 ◽  
Author(s):  
C. W. Leitz ◽  
M. T. Currie ◽  
M. L. Lee ◽  
Z.-Y. Cheng ◽  
D. A. Antoniadis ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Strained Si ◽  
P Type

Channel Engineering of SiGe-Based Heterostructures for High Mobility MOSFETs

2001 ◽  
Vol 686 ◽  
Author(s):  
Christopher W. Leitz ◽  
Matthew T. Currie ◽  
Minjoo L. Lee ◽  
Zhi-Yuan Cheng ◽  
Dimitri. A. Antoniadis ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
High Mobility ◽  
Hole Mobility ◽  
Oxide Semiconductor ◽  
Strained Si ◽  
Alloy Scattering ◽  
Dual Channel ◽  
Significant Performance ◽  
Performance Gains ◽  
Long Channel

AbstractStrained Si- and SiGe-based heterostructure metal-oxide-semiconductor field-effect transistors (MOSFETs) grown on relaxed SiGe virtual substrates exhibit dramatic electron and hole mobility enhancements over bulk Si, making them promising candidates for next generation complementary MOSFET (CMOS) devices. The most heavily investigated heterostructures consist of single strained Si layers grown upon relaxed SiGe substrates. While this configuration offers significant performance gains for both n- and p-MOSFETs, the enhanced hole mobility remains much lower than the enhanced electron mobility. By contrast, a combination of buried compressively strained Si1−yGey layers and tensile strained Si surface layers grown on relaxed Si1−xGex (x < y), hereafter referred to as dual channel heterostructures, offers nearly symmetric electron and hole mobilities without compromising n-MOSFET device performance. To investigate these heterostructures, we study the effects of alloy scattering on channel mobility in long channel MOSFETs. By using the combination of a buried Si0.2Ge0.8 channel and a strained Si surface channel grown on a relaxed Si0.5Ge0.5 virtual substrate, we have achieved nearly symmetric electron and hole mobility in the same heterostructure. By employing different virtual substrate compositions, we can decouple the effects of strain and alloy scattering in both tensile strained surface channels and compressively strained buried channels. We show that significant hole mobility enhancements can be achieved in dual channel heterostructures, even for buried channel compositions where alloy scattering is expected to be most severe. Furthermore, we show that alloy scattering in tensile strained SiGe surface channels impacts electrons much more severely than holes. Taken together, these results demonstrate that dual channel heterostructures can offer symmetric carrier mobilities and provide excellent performance gains for CMOS applications.

Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors

2009 ◽  
Vol 48 (4) ◽  
pp. 04C036 ◽  
Author(s):  
San-Lein Wu ◽  
Chung Yi Wu ◽  
Hau-Yu Lin ◽  
Cheng-Wen Kuo ◽  
Shin-Hsin Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Flicker Noise ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
P Type ◽  
Strained Sige
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