Investigation on AR Techniques of Silicon Solar Cells

2014 ◽  
Vol 521 ◽  
pp. 52-55
Author(s):  
Chun Rong Xue ◽  
Yu Qin Gu ◽  
Ming Liang Deng
Keyword(s):  
Solar Cells ◽  
Reflection Loss ◽  
Short Circuit ◽  
Surface Texturing ◽  
Single Layer ◽  
Short Circuit Current ◽  
Silicon Solar Cells ◽  
Textured Surface ◽  
Antireflection Coatings ◽  
Si Solar Cells

This work presents study of both the antireflection coatings on silicon solar cells and surface texture of silicon solar cell, with the aim to prepare high quality Si solar cells. Surface texturing, either in combination with an anti-reflection coating or by itself, can be used to minimize reflection, but the large reflection loss can be reduced significantly via a suitable anti-reflecting coatings. Significant improvement of the short circuit current after anti-reflecting coatings was observed. It is found that the currentvoltage characteristic with a double-layer anti-reflecting coatings is better than that with a single-layer anti-reflecting coatings. Depositing a multilayer on the textured surface reduces the large reflection loss significantly. The short circuit current of silicon solar cells has significant improvement after depositing anti-reflecting coatings on textured surface silicon, and it increases the efficiency of the Si solar cells.

Investigation on Antireflection Coatings for Silicon Solar Cells

2014 ◽  
Vol 521 ◽  
pp. 33-36 ◽  
Author(s):  
Chun Rong Xue ◽  
Yu Qin Gu ◽  
Ming Liang Deng
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Optical Loss ◽  
Single Layer ◽  
Short Circuit Current ◽  
Phase Changes ◽  
Silicon Solar Cells ◽  
Antireflection Coatings ◽  
Si Solar Cells ◽  
Average Reflectance

Thin-film anti-reflecting coatings can greatly reduce the optical loss by making use of phase changes, and the reflectivity depends on the refractive index of materials. TiO2ZnS and Si3N4coatings are suitable for using as single layer anti-reflecting coating on bare silicon surface, while the MgF2/ZnS and SiO2/TiO2double-layer anti-reflecting coating result in a minimum reflectance lower than 0.5% over broad spectral regions, with an average reflectance of approximately 2.25% between 400 and 1100 nm on the non-textured Si substrate. The short circuit current of silicon solar cells has significant improvement after depositing anti-reflecting coatings, and it increases the efficiency of the Si solar cells.

scholarly journals Realization of Colored Multicrystalline Silicon Solar Cells with SiO2/SiNx:H Double Layer Antireflection Coatings

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Minghua Li ◽  
Libin Zeng ◽  
Yifeng Chen ◽  
Lin Zhuang ◽  
Xuemeng Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Double Layer ◽  
Short Circuit ◽  
Single Layer ◽  
Short Circuit Current ◽  
Industrial Applications ◽  
Short Circuit Current Density ◽  
Multicrystalline Silicon ◽  
Antireflection Coatings ◽  
Si Solar Cells

We presented a method to use SiO2/SiNx:H double layer antireflection coatings (DARC) on acid textures to fabricate colored multicrystalline silicon (mc-Si) solar cells. Firstly, we modeled the perceived colors and short-circuit current density (Jsc) as a function of SiNx:H thickness for single layer SiNx:H, and as a function of SiO2thickness for the case of SiO2/SiNx:H (DARC) with fixed SiNx:H (refractive indexn=2.1at 633 nm, and thickness = 80 nm). The simulation results show that it is possible to achieve various colors by adjusting the thickness of SiO2to avoid significant optical losses. Therefore, we carried out the experiments by using electron beam (e-beam) evaporation to deposit a layer of SiO2over the standard SiNx:H for156×156 mm2mc-Si solar cells which were fabricated by a conventional process. Semisphere reflectivity over 300 nm to 1100 nm andI-Vmeasurements were performed for grey yellow, purple, deep blue, and green cells. The efficiency of colored SiO2/SiNx:H DARC cells is comparable to that of standard SiNx:H light blue cells, which shows the potential of colored cells in industrial applications.

scholarly journals Efficiency Enhancement of Nanoporous Silicon/Polycrystalline-Silicon Solar Cells by Application of Trenched Electrodes

2014 ◽  
Vol 2014 ◽  
pp. 1-4
Author(s):  
Kuen-Hsien Wu ◽  
Chia-Chun Tang
Keyword(s):  
Solar Cells ◽  
Conversion Efficiency ◽  
Polycrystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Textured Surface ◽  
Surface Layers ◽  
Nanoporous Silicon ◽  
Si Solar Cells ◽  
A Tec

Trenched electrodes were proposed to enhance the short-circuit current and conversion efficiency of polycrystalline-silicon (poly-Si) solar cells with nanoporous silicon (NPS) surface layers. NPS films that served as textured surface layers were firstly prepared on heavily doped p+-type (100) poly-Si wafers by anodic etching process. Interdigitated trenches were formed in the NPS layers by a reactive-ion-etch (RIE) process and Cr/Al double-layered metal was then deposited to fill the trenches and construct trenched-electrode-contacts (TEC’s). Cells with TEC structures (called “TEC cells”) obtained 5.5 times higher short-circuit current than that of cells with planar electrode contacts (called “non-TEC cells”). Most significantly, a TEC cell achieved 8 times higher conversion efficiency than that of a non-TEC cell. The enhanced short-circuit current and conversion efficiency in TEC cells were ascribed to the reduced overall series resistance of devices. In a TEC cell, trenched electrodes provided photocurrent flowing routes that directly access the poly-Si substrates without passing through the high resistive NPS layers. Therefore, the application of NPS surface layers with trenched electrodes is a novel approach to development of highly efficient poly-Si solar cells.

Technologies to Reduce Optical Losses of Silicon Solar Cells

2014 ◽  
Vol 953-954 ◽  
pp. 91-94
Author(s):  
Yu Qin Gu ◽  
Chun Rong Xue ◽  
Ming Liang Zheng
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Light Trapping ◽  
Short Circuit ◽  
Surface Texturing ◽  
Short Circuit Current ◽  
Optical Path Length ◽  
Silicon Solar Cells ◽  
Optical Losses ◽  
Top Contact

Optical losses chiefly effect the power from a solar cell by lowering the short-circuit current. There are a number of ways to reduce the optical losses, which includes top contact coverage of the cell surface can be minimized, anti-reflection coatings can be used on the top surface of the cell, reflection can be reduced by surface texturing, and the optical path length in the solar cell may be increased by a combination of surface texturing and light trapping. This work discusses all of the methods to reduce optical losses of silicon solar cells. Surface texturing, either in combination with an anti-reflection coating or by itself, can be used to minimize reflection, but the large reflection loss can be reduced significantly via a suitable anti-reflecting coatings. Significant improvement of the short circuit current after light trapping design was observed. In addition to these methods, top contact design of silicon solar cells is important. The design of the top contact involves the minimization of the finger and busbar resistance, and the overall reduction of losses associated with the top contact.

scholarly journals SiO2Antireflection Coatings Fabricated by Electron-Beam Evaporation for Black Monocrystalline Silicon Solar Cells

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Minghua Li ◽  
Hui Shen ◽  
Lin Zhuang ◽  
Daming Chen ◽  
Xinghua Liang
Keyword(s):  
Electron Beam ◽  
Solar Cells ◽  
Conversion Efficiency ◽  
Single Layer ◽  
Bottom Layer ◽  
Energy Conversion Efficiency ◽  
Electron Beam Evaporation ◽  
Silicon Solar Cells ◽  
Antireflection Coatings ◽  
Efficiency Increase

In this work we prepared double-layer antireflection coatings (DARC) by using the SiO2/SiNx:H heterostructure design. SiO2thin films were deposited by electron-beam evaporation on the conventional solar cell with SiNx:H single-layer antireflection coatings (SARC), while to avoid the coverage of SiO2on the front side busbars, a steel mask was utilized as the shelter. The thickness of the SiNx:H as bottom layer was fixed at 80 nm, and the varied thicknesses of the SiO2as top layer were 105 nm and 122 nm. The results show that the SiO2/SiNx:H DARC have a much lower reflectance and higher external quantum efficiency (EQE) in short wavelengths compared with the SiNx:H SARC. A higher energy conversion efficiency of 17.80% was obtained for solar cells with SiO2(105 nm)/SiNx:H (80 nm) DARC, an absolute conversion efficiency increase of 0.32% compared with the conventional single SiNx:H-coated cells.

The influence of emitter resistance on the electrical parameters of mono- and multicrystalline silicon solar cells

2019 ◽  
Vol 36 (3) ◽  
pp. 90-94
Author(s):  
Barbara Swatowska ◽  
Piotr Panek ◽  
Dagmara Michoń ◽  
Aleksandra Drygała
Keyword(s):  
Solar Cells ◽  
Contact Resistance ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells ◽  
Electrical Parameters ◽  
Content Type ◽  
Diffusion Parameters

Purpose The purpose of this study was the comparison and analysis of the electrical parameters of two kinds of silicon solar cells (mono- and multicrystalline) of different emitter resistance. Design/methodology/approach By controlling of diffusion parameters, silicon mono- (Cz-Si) and multicrystalline (mc-Si) solar cells with different emitter resistance values were produced – 22 and 48 Ω/□. On the basis of current-voltage measurements of cells and contact resistance mapping, the properties of final solar cells based on two different materials were compared. Additionally, the influence of temperature on PV cells efficiency and open circuit voltage (Uoc) were investigated. The PC1D simulation was useful to determine spectral dependence of external quantum efficiency of solar cells with different emitter resistance. The silicon solar cells of 25 cm2 area and 240 µm thickness were investigated. Findings Considering the all stages of cell technology, the best structure is silicon solar cell with sheet resistance (Rsheet) of 45-48 Ω/□. Producing of an emitter with this resistance allowed to obtain cells with a fill factor between 0.725 and 0.758, Uoc between 585 and 612 mV, short circuit current (Isc) between 724 and 820 mA. Originality/value Measurements and analysis confirmed that mono- and multicrystalline silicon solar cells with 48 Ω/□ emitter resistance have better parameters than cells with Rsheet of 22 Ω/□. The contact resistance is the highest for mc-Si with Rsheet of 48 Ω/□ and reaches the value 3.8 Ωcm.

scholarly journals Analytical Study of the Electrical Output Characteristics of c-Si Solar Cells by Cut and Shading Phenomena

Energies ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 3397 ◽  
Author(s):  
Jong Lim ◽  
Woo Shin ◽  
Hyemi Hwang ◽  
Young-Chul Ju ◽  
Suk Ko ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Incident Light ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Si Solar Cell ◽  
Si Solar Cells ◽  
Electrical Output

Cut solar cells have received considerable attention recently as they can reduce electrical output degradation when the c-Si solar cells (crystalline-silicon solar cells) are shaded. Cut c-Si solar cells have a lower short-circuit current than normal solar cells and the decrease in short-circuit currents is similar to the shading effect of c-Si solar cells. However, the results of this study’s experiment show that the shadow effect of a c-Si solar cell reduces the V o c (open circuit voltage) in the c-Si solar cell but the V o c does not change when the c-Si solar cell is cut because the amount of incident light does not change. In this paper, the limitations of the electrical power analysis of the cut solar cells were identified when only photo current was considered and the analysis of the electric output of the cut c-Si solar cells was interpreted with a method different from that used in previous analyses. Electrical output was measured when the shaded and cut rates of c-Si solar cells were increased from 0% to 25, 50 and 75%, and a new theoretical model was compared with the experimental results using MATLAB.

scholarly journals Nanomolded buried light-scattering (BLiS) back-reflectors using dielectric nanoparticles for light harvesting in thin-film silicon solar cells

2020 ◽  
Vol 11 ◽  
pp. 2
Author(s):  
Derese Desta ◽  
Rita Rizzoli ◽  
Caterina Summonte ◽  
Rui N. Pereira ◽  
Arne Nylandsted Larsen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Light Scattering ◽  
Silicon Nanoparticles ◽  
Short Circuit ◽  
Spatial Separation ◽  
Short Circuit Current ◽  
Silicon Solar Cells ◽  
Growth Interface ◽  
Inverted Pyramid ◽  
Back Reflector

The article presents a nanoparticle-based buried light-scattering (BLiS) back-reflector design realized through a simplified nanofabrication technique for the purpose of light-management in solar cells. The BLiS structure consists of a flat silver back-reflector with an overlying light-scattering bilayer which is made of a TiO2 dielectric nanoparticles layer with micron-sized inverted pyramidal cavities, buried under a flat-topped silicon nanoparticles layer. The optical properties of this BLiS back-reflector show high broadband and wide angular distribution of diffuse light-scattering. The efficient light-scattering by the buried inverted pyramid back-reflector is shown to effectively improve the short-circuit-current density and efficiency of the overlying n-i-p amorphous silicon solar cells up to 14% and 17.5%, respectively, compared to the reference flat solar cells. A layer of TiO2 nanoparticles with exposed inverted pyramid microstructures shows equivalent light scattering but poor fill factors in the solar cells, indicating that the overlying smooth growth interface in the BLiS back-reflector helps to maintain a good fill factor. The study demonstrates the advantage of spatial separation of the light-trapping and the semiconductor growth layers in the photovoltaic back-reflector without sacrificing the optical benefit.

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