Material Engineering of GexSbyTez and GaxSby Phase Change Materials for High Performance Phase Change Memory

2012 ◽  
Keyword(s):  
Phase Change ◽  
High Performance ◽  
Phase Change Materials ◽  
Phase Change Memory ◽  
Material Engineering ◽  
Change Memory

The Suppressing of Density Change in Nitrogen Doped Ge2Sb2Te5 for High Performance Phase Change Memory

2015 ◽  
Vol 4 (12) ◽  
pp. P105-P108 ◽  
Author(s):  
Z. Xu ◽  
B. Liu ◽  
Y. Chen ◽  
D. Gao ◽  
H. Wang ◽  
...  
Keyword(s):  
Phase Change ◽  
High Performance ◽  
Phase Change Memory ◽  
Density Change ◽  
Nitrogen Doped ◽  
Change Memory

scholarly journals Scalability of Phase Change Materials in Nanostructure Template

2015 ◽  
Vol 2015 ◽  
pp. 1-4
Author(s):  
Wei Zhang ◽  
Biyun L. Jackson ◽  
Ke Sun ◽  
Jae Young Lee ◽  
Shyh-Jer Huang ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Scaling Limit ◽  
Phase Change Memory ◽  
Leakage Power ◽  
Memory Element ◽  
Transmission Electron ◽  
Diffraction Mode ◽  
Memory Applications ◽  
Change Memory

The scalability of In2Se3, one of the phase change materials, is investigated. By depositing the material onto a nanopatterned substrate, individual In2Se3nanoclusters are confined in the nanosize pits with well-defined shape and dimension permitting the systematic study of the ultimate scaling limit of its use as a phase change memory element. In2Se3of progressively smaller volume is heated inside a transmission electron microscope operating in diffraction mode. The volume at which the amorphous-crystalline transition can no longer be observed is taken as the ultimate scaling limit, which is approximately 5 nm3for In2Se3. The physics for the existence of scaling limit is discussed. Using phase change memory elements in memory hierarchy is believed to reduce its energy consumption because they consume zero leakage power in memory cells. Therefore, the phase change memory applications are of great importance in terms of energy saving.

Ultra-Multilevel-Storage Phase Change Memory

2014 ◽  
Vol 936 ◽  
pp. 599-602
Author(s):  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Single Layer ◽  
Programming Method ◽  
Promising Method ◽  
Device Structure ◽  
Material Engineering ◽  
Structure Reliability ◽  
Multilevel Storage ◽  
Change Memory

In this study, we investigated ultra-multilevel-storage (UMLS) in lateral phase change memory (PCM) on the basis of device structure, reliability and programming method. We found that the number of resistance levels was limited strictly by the number of PC layers in multilayer multilevel cell (ML-MLC). A number of distinct levels up to 16 were obtained using a simple single-layer multilevel cell (SL-MLC). And material engineering is expected to greatly improve the reliability of MLS. We believe that fast-freely-achievable (FFA)-MLC by stair-like-pulse programming is a very promising method for futures application.

Phase change materials and phase change memory

MRS Bulletin ◽  
2014 ◽  
Vol 39 (8) ◽  
pp. 703-710 ◽  
Author(s):  
Simone Raoux ◽  
Feng Xiong ◽  
Matthias Wuttig ◽  
Eric Pop
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Phase Change Memory ◽  
Image Position ◽  
Change Memory

Abstract

High performance of multilevel-cell phase change memory device with good endurance reliability

2019 ◽  
Vol 34 (10) ◽  
pp. 105019
Author(s):  
Yuan-Guang Liu ◽  
Yi-Feng Chen ◽  
Dao-Lin Cai ◽  
Yao-Yao Lu ◽  
Lei Wu ◽  
...  
Keyword(s):  
Phase Change ◽  
High Performance ◽  
Phase Change Memory ◽  
Memory Device ◽  
Change Memory

Design of an Initialization Circuit Used in Phase Change Memory Chip

2014 ◽  
Vol 543-547 ◽  
pp. 471-474
Author(s):  
Qian Wang ◽  
Hou Peng Chen ◽  
Yi Yun Zhang ◽  
Xi Fan ◽  
Xi Li ◽  
...  
Keyword(s):  
Phase Change ◽  
High Resistance ◽  
Phase Change Materials ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Memory Chip ◽  
Grain Sizes ◽  
Reset Operation ◽  
Materials Used ◽  
Change Memory

Design of a novel initialization circuit is presented in this paper. The initialization circuit is used to supply initialization current to the first test of phase change memory chip after delivery. Inhomogeneous crystalline grain sizes appear in phase change materials used in memory cells during manufacturing process. The crystalline phase with low resistance will convert to amorphous phase with high resistance after initialization, which is called RESET the memory cells to 0. Normal RESET operation current is not high enough to RESET great grain, which deteriorates bit yield of phase change memory chip. In comparison, the higher initialization current will increase bit yield observably.

Investigation of Time Instability Factors in Ti-SbxTe Based Phase Change Memory

2013 ◽  
Vol 873 ◽  
pp. 825-830 ◽  
Author(s):  
Xing Long Ji ◽  
Liang Cai Wu ◽  
Feng Rao ◽  
Zhi Tang Song ◽  
Min Zhu ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Crystallization Process ◽  
Phase Change Memory ◽  
Structure Model ◽  
Data Retention ◽  
Spontaneous Crystallization ◽  
Change Trend ◽  
Band Structure Model ◽  
Change Memory

In this paper, the two time instability factors in phase change memory, amorphous resistance drift and spontaneous crystallization process, are studied based on Ti2.75(SbxTe)97.25 and Ti6.85(SbxTe)93.15. The drift coefficients of both components are calculated and compared under room temperature. The reason why the drift coefficient decreases with the Ti concentration increases is discussed based on the band structure model of amorphous phase change materials. And the data retention change trend is also presented. The experiment results and the physical explaination can also be extended to other metallic element doped SbxTe alloy phase change materials.

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