2D Phase-Field Simulation of the Directional Solidification Process

2014 ◽  
Vol 704 ◽  
pp. 17-21 ◽  
Author(s):  
Alexandre Furtado Ferreira ◽  
José Adilson de Castro ◽  
Ivaldo Leão Ferreira

The microstructure evolution during the directional solidification of Al-Cu alloy is simulated using a phase field model. The transformation from liquid to solid phase is a non-equilibrium process with three regions (liquid, solid and interface) involved. Phase field model is defined for each of the three regions. The evolution of each phase is calculated by a set of phase field equations, whereas the solute in those regions is calculated by a concentration equation. In this work, the phase field model which is generally valid for most kinds of transitions between phases, it is applied to the directional solidification problem. Numerical results for the morphological evolution of columnar dendrite in Al-Cu alloy are in agreement with experimental observations found in the literature. The growth velocity of the dendrite tip and the concentration profile in the solid, interface and liquid region were calculated.

2013 ◽  
Vol 470 ◽  
pp. 100-103
Author(s):  
Dong Sheng Chen ◽  
Ming Chen ◽  
Rui Chang Wang

PFM (phase field method) was employed to study microstructure evolution, and considering the effect of solute concentration to the undercooling, we developed a phase field model for binary alloy on the basis of pure substance model. In the paper, the temperature field and solute field were coupled together in the phase field model to calculate the crystal growth of magnesium alloy in directional solidification. The simulation results showed a non-planar crystal growth of planar to cellular to columnar dendrite, the comparison of different dendrite patterns were carried out in the numerical simulation, and with the increasing of the anisotropy, the second dendrite arms became more developed.


2021 ◽  
Vol 18 (2) ◽  
pp. 102-107
Author(s):  
Arunabha Mohan Roy

A short review on a thermodynamically consistent multiphase phase-field approach for virtual melting has been presented. The important outcomes of solid-solid phase transformations via intermediate melt have been discussed for HMX crystal. It is found out that two nanoscale material parameters and solid-melt barrier term in the phase-field model significantly affect the mechanism of PTs, induces nontrivial scale effects, and changes PTs behaviors at the nanoscale during virtual melting.


1998 ◽  
Vol 9 (4) ◽  
pp. 417-445 ◽  
Author(s):  
GUNDUZ CAGINALP ◽  
XINFU CHEN

We consider the distinguished limits of the phase field equations and prove that the corresponding free boundary problem is attained in each case. These include the classical Stefan model, the surface tension model (with or without kinetics), the surface tension model with zero specific heat, the two phase Hele–Shaw, or quasi-static, model. The Hele–Shaw model is also a limit of the Cahn–Hilliard equation, which is itself a limit of the phase field equations. Also included in the distinguished limits is the motion by mean curvature model that is a limit of the Allen–Cahn equation, which can in turn be attained from the phase field equations.


Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7317
Author(s):  
Pingping Wu ◽  
Yongfeng Liang

The lattice phase field model is developed to simulate microstructures of nanoscale materials. The grid spacing in simulation is rescaled and restricted to the lattice parameter of real materials. Two possible approaches are used to solve the phase field equations at the length scale of lattice parameter. Examples for lattice phase field modeling of complex nanostructures are presented to demonstrate the potential and capability of this model, including ferroelectric superlattice structure, ferromagnetic composites, and the grain growth process under stress. Advantages, disadvantages, and future directions with this phase field model are discussed briefly.


2017 ◽  
Vol 520 (1) ◽  
pp. 154-158 ◽  
Author(s):  
Linan Zhang ◽  
Wei Zheng ◽  
Jungchul Lee ◽  
Liqun Wu ◽  
Dongchoul Kim

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