1064 nm High-Power Broad Area Semiconductor Lasers with Electrode Pattern

2011 ◽  
Vol 84-85 ◽  
pp. 590-593
Author(s):  
Zhong Liang Qiao ◽  
Si Yu Zhang ◽  
Xin Gao ◽  
Peng Lu ◽  
Hui Li ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Semiconductor Lasers ◽  
High Power ◽  
Continuous Wave ◽  
Far Field ◽  
Full Width ◽  
Half Maximum ◽  
Broad Area ◽  
Continuous Wave Output Power ◽  
Area Distribution

According to the principle of carrier diffusion, aluminum nitride (AlN) coating, and RIE deep etching technology are implemented, 1064 nm broad area distribution electrode lasers have been obtained exhibiting near single lobe near and far field. We report electrode pattern lasers emitting at 1064 nm with the minimal full width at half maximum (FWHM) horizontal angle of 2.7° while the maximum continuous-wave output power up to 3.65 W and slope efficiencies as high as 0.85 W/A.

808 nm Semiconductor Lasers with Tailored Gain for Mode Shape

2011 ◽  
Vol 84-85 ◽  
pp. 603-606
Author(s):  
Zhong Liang Qiao ◽  
Bao Xue Bo ◽  
Si Yu Zhang ◽  
Xin Gao ◽  
Peng Lu ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Mode Shape ◽  
Continuous Wave ◽  
Hole Burning ◽  
Full Width ◽  
Half Maximum ◽  
Optical Mode ◽  
Continuous Wave Output Power ◽  
High Slope ◽  
Modal Behavior

We implement the concept of the distributed electrode, which allows to improve the modal behavior of lasers and to reduce spatial-hole burning effects by preferentially localizing current injection in the center of the structure, hence discriminating the optical mode. We report the first realization of distributed electrode lasers emitting at 808 nm with the measured full width at half maximum (FWHM) angle of the minimal horizontal angle as 3.8° while the maximum continuous-wave output power is up to 4 W and high slope efficiencies as high as 0.95 W/A.

Power scaling of high-power optically pumped semiconductor lasers for continuous wave and ultrashort pulse generation

2012 ◽  
Author(s):  
Alexandre Laurain ◽  
Maik Scheller ◽  
Tsuei-Lian Wang ◽  
Jorg Hader ◽  
Jerome V. Moloney ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
High Power ◽  
Ultrashort Pulse ◽  
Continuous Wave ◽  
Pulse Generation ◽  
Power Scaling ◽  
Optically Pumped ◽  
Ultrashort Pulse Generation

Efficient coupling of dynamic electro-optical and heat-transport models for high-power broad-area semiconductor lasers

2019 ◽  
Vol 51 (3) ◽  
Author(s):  
Mindaugas Radziunas ◽  
Jürgen Fuhrmann ◽  
Anissa Zeghuzi ◽  
Hans-Jürgen Wünsche ◽  
Thomas Koprucki ◽  
...  
Keyword(s):  
Heat Transport ◽  
Semiconductor Lasers ◽  
High Power ◽  
Broad Area ◽  
Transport Models ◽  
Efficient Coupling

scholarly journals stripe lasers for high-power fiber coupled pump modules

2013 ◽  
Vol 1 (1) ◽  
pp. 60-67 ◽  
Author(s):  
René Platz ◽  
Götz Erbert ◽  
Wolfgang Pittroff ◽  
Moritz Malchus ◽  
Klaus Vogel ◽  
...  
Keyword(s):  
High Power ◽  
Pulse Width ◽  
Continuous Wave ◽  
Optical Power ◽  
Far Field ◽  
Laser Device ◽  
Maximum Conversion ◽  
Maximum Conversion Efficiency ◽  
Lateral Structure ◽  
Narrow Stripe

AbstractWe present a 940 nm quasi-continuous wave semiconductor laser designed as a building block for high-power fiber coupled pump modules. The laser comprises a $400~\mathrm{\mu} \mathrm{m} $ narrow-stripe array mounted on an aluminum nitride substrate using hard solder. The chip has been optimized for high optical power and low lateral far-field angles. Two vertical and six lateral structure variations have been investigated to determine the best achievable performance. Operating at 1 ms pulse width and a repetition rate of 10 Hz, the laser device reaches a maximum pulse power of 86 W from a $400~\mathrm{\mu} \mathrm{m} $ aperture and more than 62% maximum conversion efficiency. Low lateral far-field angles (95% power enclosed) of 11.5° and 13.5°, depending on the epitaxial design, enable efficient multimode fiber coupling. The potential for highly reliable applications has been demonstrated.

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